| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MGF4953A |
MITSUBISHI |
N/a |
3000 |
 |
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) |
MGF4953A , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MGF4954A , SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MGP15N40CL ,Ignition IGBT 15 Amps, 410 VoltsELECTRICAL CHARACTERISTICS (continued)Characteristic Symbol Test Conditions Temperature Min Typ Max ..
MGR2018CT ,Power Manager Gallium Arsenide Power Rectifierfeatures:GALLIUM ARSENIDE• Planar Epitaxial ConstructionRECTIFIER• Nitride Passivation for Stable B ..
MGS05N60D ,Insulated Gate Bipolar TransistorTHERMAL CHARACTERISTICSThermal Resistance — Junction to Case – IGBT R 25 °C/WθJC— Junction to Ambie ..
MID400 ,AC LINE MONITOR LOGIC-OUT DEVICE
MID400 ,AC LINE MONITOR LOGIC-OUT DEVICE
MID400 ,AC LINE MONITOR LOGIC-OUT DEVICE
