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MG75Q2YS51
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG75Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT
MG75Q2YS51 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3 µs (Max) @Inductive load Low saturation voltage
: CE (sat) = 3.6 V (Max) Enhancement-mode Includes a complete half bridge in one package The electrodes are isolated from case
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ―
Weight: 240g
Unit: mm
