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MG75Q2YS40ToshibaN/a9avaiGTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


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MG75Q2YS40
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG75Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT
MG75Q2YS40

High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) Low saturation voltage++++++++++++
: VCE(sat) = 4.0V (Max) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Weight: 202g
Unit: mm
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