MG75Q1ZS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.3 µs (max) f @inductive load Low sat ..
MG75Q2YS40 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.5µs (Max) f t = 0.5µs (Max) rr L ..
MG75Q2YS42 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching
MG75Q2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.3 µs (Max) f @Iinductive load Low ..
MG75Q2YS51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.3 µs (Max) f @Inductive load Low ..
MG800J1US52A , HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
MIC812LU , Microprocessor Reset Circuits
MIC812RU , Microprocessor Reset Circuits
MIC812TU , Microprocessor Reset Circuits
MIC833BM5 , Comparator and Reference with Adj. Hystersis Advance Information
MIC833BM5 , Comparator and Reference with Adj. Hystersis Advance Information
MIC841HYC5 , Comparator with 1.25% Reference and Adjustable Hysteresis
MG75Q1ZS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG75Q1ZS50 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3 µs (max)
@inductive load Low saturation voltage
: VCE (sat) = 3.6 V (max) Enhancement-mode The electrodes are isolated from case
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Weight: 202g
Unit: mm
