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MG75Q1BS11
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG75QIBS11
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MGi'75Q'illBS'il1l
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
i53d: ati
4352!:(l5
0 High Input Impedance
0 High Speed : tf=1.0/zs(Max.)
0 Low Saturation Voltage: VCE (sat)=2.7V(Max.)
o Enhancement-Mode
o The Electrodes are Isolated from Case. a9:H16
33:05 G
2'71: M g 8
EQUIVALENT CIRCUIT E t l
s s . _ a
aB)o-1
JEDEC -
E EIAJ -
TOSHIBA 2-33D1A
Weight : 90 g
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES -k20 V
Collector Current DC 10 75 A
lms ICP 150
Collector Power Dissipation (Tc=25°C) PC 300 W
Junction Temperature Ti 150 T
Storage Temperature Range Tstg -40-125 'C
Isolation Voltage V1501 2500 (AC 1 Minute) V
Screw Torque(Termina1/Mounting) - 2/ 3 Nun
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/4
TOSHIBA MG75Q1BS11
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = 1' 20V, VCE = 0 - - i 500 nA
Collector Cut-off Current ICES VCE = 1200V, VGE =0 - - 1.0 mA
Collector-Emir Voltage VCES ICS lmA, VGE =0 Note 1 1200 - -
Gate-Emitter
Cut-off Voltage VGE (OFF) 1C - 75mA, VCE - 5V 3.0 - 6.0
Collector-Emi)
Saturation Voltage VCE (sat) IC - 75A, VGE - 15V - 2.3 2.7 V
. . VCE = 10V, VGE = 0,
Input Capacitance Cies f: 1MHz - 10500 - pl?
Rise Time tr - 0.3 0.6
. . T - T I - 0.4 0.8
Sletchlng urn on lme ton 15V 16n 00 ,as
Time Fall Time tf 0 - 0.6 1.0
- 15V .
Turn-off Time toff 600V - 1.2 1.6
Thermal Resistance Rth (j -e) - - - 0.41 ''C / W
Note I: Do not apply the
over rating voltage.
1997-03-03 2/4
TOSHIBA
MG7SQ1BS11
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT [C (A)
COLLECTOR CURRENT 1C (A)
IC - VCE
COMMON EMITTER
Tc = 25°C
sec 300W
VGE = 8V _
2 4 6 8
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
To = 25°C
Ic-- 150A
4 8 12 16
GATE-EMITTER VOLTAGE VGE (V)
10 - VGE
COMMON EMITTER
VCE = 5V
Tc = 125''C
4 8 12
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITI‘ER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE(V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = - 40°C
IC=150A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
Te = 125''C
IC=150A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE, VGE - QG
COMMON EMITTER
RL = "
To = 25'C
100 200 300 400 508
CHARGE QG (nC)
GATE-EMITTER VOLTAGE VGE (V)
1997-03-03 3/4
TOSHIBA
MG75Q1BS11
SWITCHING TIME - IC
COMMON EMITTER
Vcc=600V, VGE = , 15V, RG=160
Tc=26°C
SWITCHING TIME (/18)
0 10 20 30 40 50 60 70 80
COLLECTOR CURRENT IC (A)
COMMON
EMITTER
VGE = 0
f-- lMHz
Te = 25°C
CAPACITANCE c (171’)
0,1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
500 I I I I I IIII I
30010 MAX.(PULSED);
'i'!" I I IIIIIII , k,” 50sasy.C
10010 MAX. . NN "100ps .y.7,
J? (CONTINUOUS) y.f _ -
E 50 _ , i
i! 30 \\ _
g X SINGLE \
a 10 NONREPETITIVE _
D PULSE Tc=25°C lms X
g 5 CURVES MUST BE I I
8 3 DERATED LINEARLY N 1 l l
WITH INCREASE IN - C OPERATION
TEMPERATURE. l l l l (Ill)
l 3 3 10 30 50 100 3005001000 3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL RESISTANCE
SWITCHING TIME (/15)
(”C / W)
Rth (b)
COLLECTOR CURRENT 1C (A)
SWITCHING TIME - RG
COMMON EMITTER
VCC = 600V
VGE = l 15V
IC = 75A
Tc = 25°C
3 5 10 30 50 100
GATE RESISTANCE RG (CI)
300 500
Rth(t) - tw
ou- IO" IO-l 1 10
PULSE WIDTH tw (s)
REVERSE BIAS SOA
Tjs125''C
VGE= :15v
RG=160
0.10 200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 4/4
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