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MG75J1BS11
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG7SJ1BS11
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
hhlG75jMBS1l1
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
0 High Input Impedance
a High Speed : tf=1.0/xs(Max.) (10:75A) 3
0 Low Saturation Voltage : VCE(Sat)=2.7V(Max.) (Ic=75A) , tO
!l! 325:0.4
o Enhancement-Mode " 48.3d:
o The Electrodes are Isolated from Case. 5
EQUIVALENT CIRCUIT " . l 'p,
C 'd 5 Ln; I 1 1 I
G(B)o-l g
E JEDEC -
EIAJ -
TOSHIBA 2-33F1A
Weight : 86g
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Ernitter Voltage VGES -3c20 V
Collector Current DC 10 75 A
lms ICP 150
Collector Power Dissipation PC 200 W
J unction Temperature Tj 150 ''C
Storage Temperature Range Tstg -40--125 T
Isolation Voltage V1801 2500(AC 1 Minute) V
Screw Torque (Terminal/ Mounting) - 2/ 3 Nan
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the aptplications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/4
TOSHIBA MG7SJ1BS11
ELECTRICAL CHARACTERISTICS (Ta = 25''C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i- 20V, VCE = 0 - - k 500 nA
Collector Cut-off Current ICES VCE = 600V, VGE =0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE(OFF) IC = 75mA, VCE = 5V 3.0 - 6.0
Collector-Er/ter
Saturation Voltage VCE(sat) IC = 75A, VGE = 15V - 2.3 2.7
Input Capacitance Cies VCE = 10V, VGE = o, f = 1MHz - 6000 - pl?
Rise Time tr - 0.3 0.8
. 330. a
Turn-on Time ton + 15V o2Uii-l " - 0.4 1.0
Switching Time -rrr ,as
Fall Time tf - 15V - 0.6 1.0
Turn-off Time toff 300V - 1.0 1.6
Thermal Resistance Rthti-e) - - - 0.625 °C /W
1997-03-03 2/4
TOSHIBA
MG7SJ1BS11
10 (A)
COLLECTOR CURRENT
COLLECTOR—EMIT’I‘ER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
IC - VCE
15 12 COMMON E
Te = 25°C
0 2 4 6 8 10
c0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON E
Tc = 25°C
IC=30A
o 4 s 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER / 25
VCE = 5V //
Tc = -40''C
o 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR—EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
Tc = - 40°C
IC=30A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
To = 125°C
IC=30A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE, VGE - QG
COMMON E
RL = MI
Tc = 25°C
GATEEMITTER VOLTAGE VGE
100 200 300 400 500
CHARGE QG (nC)
1997-03-03 3/4
TOSHIBA
SWITCHING TIME - IC
G? 0.5
i5 COMMON EMITTER
E Vcc=300V
© 0.1 VCE=i15V
RG--33fl
Tc=25°C
20 40 60 80 100
COLLECTOR CURRENT 10 (A)
C - VCE
V 5000
0 3000
E 1000
g 500 COMMON
, 300 EMITTER Coes
O VGE=0
100 f=1MHz
Tc=25°C Cres
0.3 1 3 10 30 100 300 1000
C0LLECT0R-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
300 I mm
10 MAX.(PULSED)yk l I lllll
S 100 IC MAX.(CONTINUOUS) N. iVtrs-e"
S? 50 EEHEH 'is',rulc,l " i
E 30-DO OPERATION . 1ms>< 100,st _
g I [lllll I I I l _ "
S 10 .).T. SINGLE k
e NONREPETITIVE _ _
R 5 PULSE Tc=25°C
a 3 CURVES MUST BE N
j DERATED LINEARLY l
8 1 WITH INCREASE IN \
TEMPERATURE. N
0.3 0.5 1 3 5 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
30 50 100 3005001000
THERMAL TRANSIENT RESISTANCE
SWITCHING TIME (/15)
Ram (°C/W)
COLLECTOR CURRENT
MG7SJ1BS11
SWITCHING TIME - RG
COMMON EMITTER
0.1 VCC = 300V
VGE = i 15V
IC = 75A
Tc = 25°C
1 3 10 30 100 300
GATE RESISTANCE RG (0)
Rth(t) - tw
10-3 10-2 IO-I 1 10
PULSE WIDTH tw (s)
REVERSE BIAS SOA
Tjs 125''C
VGE= i15V
Rc--33n
100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 4/4
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