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MG50Q1ZS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG50Q1ZS50 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3 µs (max) @Inductive load Low saturation voltage
: VCE (sat) = 3.6 V (max) Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Unit: mm
Weight: 202g
