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MG50J6ES50TOSHIBAN/a8avaiGTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


MG50J6ES50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance. 6 IGBTs built in ..
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MG50J6ES50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG50J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT
MG50J6ES50

High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 50A)
Equivalent Circuit

Weight: 505g (Typ.)
Unit: mm
000707EAA1
ic,good price


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