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MG300J2YS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG300J2YS50 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30µs (max) (IC = 300A)
trr = 0.15µs (max) (IF = 300A) Low saturation voltage
: VCE (sat) = 2.70V (max) (IC = 300A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Weight: 430g (typ.)
Unit: mm
