MG25Q6ES42 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.92.7i0.6ll .5+0.6 8 2:b0.3 '2155:}:03O The Electrodes are Isolated from Case. . >303 1 ..
MG25Q6ES50 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.- tb-u-trua-W/ ..
MG25Q6ES50A ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
MG25Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
MG300J1US51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a comple ..
MG300J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a complet ..
MIC68200-1.2YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.2YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.5YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.8YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-1.8YML , 2A Sequencing LDO with Tracking and Ramp Control
MIC68200-2.5YML , 2A Sequencing LDO with Tracking and Ramp Control
MG25Q6ES42
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG25Q6ES42
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG25Q6ES42
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
o The Electrodes are Isolated from Case.
0 6 IGBTs are Built Into 1 Package.
0 Enhancement-Mode
44.7i0.6
0 Low Saturation Voltage
. . . i
VCE (sat) =4.0V(Max.) 4 2 65DEPTH5.0 ee
84.3i:0.6
dt High Speed 2 tf-- 0.5/zs (Max.) s12is'rcf?N-'-1NLt11-0
trr = 0.5ps (Max.) 20120.3 J?1.5k0. 21.&0.3 s-FAST-ON-TAB #250
m_i m if’t Ift-
16.5il
JEDEC -
EIAJ -
TOSHIBA 2-93A3A
Weight : 220g
EQUIVALENT CIRCUIT
GU GV GW 0:
(BU) (BV) (BW)
EUC 0U
EVO ov
EWo--oW
/ilif)t K gl; K $$ng
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/5
TOSHIBA MG25Q6ES42
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES i- 20 V
Collector Current DC IC 25 A
lms ICP 50
Forward Current DC IF 25 A
lms IFM 50
Collector Power Dissipation PC 200 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 ''C
Isolation Voltage V1501 2500 (AC 1 minute) V
Screw Torque - 3 N . m
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i 20V, VCE = 0 - - i- 10 ,uA
Collector Cut-off Current ICES VCE = 1200V, VGE =0 - - 1.0 mA
Gate-Emitter
Cut-off Voltage VGE(OFF) IC - 25mA, VCE - 5V 3.0 - 6.0 V
Collector-Emi;
Saturation Voltage VCE(sat) IC - MA, VGE - 15V - 3.0 4.0 V
Input Capacitance Cies VCE = 10V, VGE = 0, f = lMHz - 3000 - pF
Rise Time tr - 0.3 0.6
Turn-on Time t xt' - 0.4 0.8
Switchin Time on 15V : 51n I N #5
g Fall Time tf 0 rL- 15V - 0.25 0.5
Turn-off Time toff - A 600V - 0.8 1.5
Forward Voltage VF IF = 25A, VGE = 0 - 2.0 2.5 V
. IF = 25A, VGE = - 10V
Reverse Recovery Time trr di / dt= 100A HIS - 0.2 0.5 ps
T . t - - 0.625
Thermal Resistance Rth (j-e) rams or T /W
Diode - - 1.3
1997-03-03 2/5
TOSHIBA MG25Q6ES42
IC - VCE VCE - VGE
COMMON
EMITTER
Tc = 25°C
COMMON
EMITTER
Te = - 40"C
COLLECTOR CURRENT IC
COLLECTOR-EMITTER VOLTAGE VCE (V)
0 2 4 6 8 10 O 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE VCE - VGE
COMMON
EMITTER
Te = 25°C
COMMON
EMITTER
Te = 125°C
COLLECTOR-EMITTER VOLTAGE VCE(V)
COLLECTOR-EMITI‘ER VOLTAGE VCE (V)
0 4 8 12 16 20 0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V)
IC - VGE VCE,VGE - QG
60 2000
ts COMMON EMITTER '
<2 RL=24Q
V l / " > 1600 - " 'd
J.? I f , g Tc=25 C >
E ll 5 u
ti II / o 1200 g
n: / > ._1
td ttt o
D , m >
o I E: "
g I - 800 M
= . ' E
g Te 125 C "-25 COMMON g k]
8 EMITTER ti 400 E
///_40 VCE=5V iii, U
0 I o 0 0
o 4 8 Lt 16 20 0 40 80 120 160 200 240
GATE-EMITTER VOLTAGE VGE (V) CHARGE QG (nC)
1997-03-03 3/5
TOSHIBA
MG25Q6ES42
SWITCHING TIME - IC
COMMON EMITTER
Vcc=600V
VGE = , 15V
Rg=610
Tc=25°C
SWITCHING TIME (/15)
0 5 10 15 20 25
COLLECTOR CURRENT IC (A)
To = 125°C 25 - 40
FORWARD CURRENT IF (A)
COMMON CATHODE
VGE = 5V
0 1 2 3 4
FORWARD VOLTAGE " (V)
COMMON
EMITTER
VGE = 0V
f-- IMHz
To -- 25°C
CAPACITANCE C (p?)
0.03 0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME (/15)
PEAK REVERSE RECOVERY CURRENT
REVERSE RECOVERY TIME tn. (X10ns)
(”C 1W)
TRANSIENT THERMAL RESISTANCE
Rth It)
SWITCHING TIME -RG
COMMON EMITTER
Vcc=600V
Ic=25A
VGE -- i 16V
Tc=25°C
1 3 5 10 30 50 100
GATE RESISTANCE Ito (n)
300 500 1000
Irr, trr - IF
COMMON CATHODE
di/dt=100A/ys
VGE = - 10V
Tc -- 25°C
0 5 10 15 20 25
FORWARD CURRENT IF (A)
Rth (t) - tw
Tc = 25''C
DIODE STAGE
0 TRANSISTOR STAGE
0%” 10-2 IO-l 1 10
PLUSE WIDTH tw (s)
1997-03-03 4/5
TOSHIBA
MG25Q6ES42
COLLECTOR CURRENT [C (A)
SAFE OPERATING AREA
k MAX.(PULSED) .'.M.
- 10 MAX.
_ §CONTINUOUS)
l I [Ill
Illlll
DC OPERATIO
lllllllll
[11111111
.)k. SINGLE \000
5 NONREPETITIVE -
Tc=25°C
CURVES MUST BE
DERATED LINEALY
WITH INCREASE IN
TEMPERATURE.
V__.__
lms yd.
1 3 10 30
COLLECTOR-EM-ER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
REVERSE BIAS SOA
Tis 1 26'C
VGE = i 15V
RG = 510
COLLECTOR-EMITTER VOLTAGE VCE
400 600 800 1000 1200
1997-03-03 5/5
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