MG25Q2YS40 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.3-M5-FAST- ON- TAB #110'es, i 2-65.6d:0.3High Input ImpedanceHigh Speed :tf= 0.5ps (Ma ..
MG25Q6ES42 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.92.7i0.6ll .5+0.6 8 2:b0.3 '2155:}:03O The Electrodes are Isolated from Case. . >303 1 ..
MG25Q6ES50 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.- tb-u-trua-W/ ..
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MG25Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
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MG25Q2YS40
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG25Q2YS40
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG25Q2YS40
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
B2 4-FAST-ON-TAB #110
2 - (b 5.63: 0.3
0 High Input Impedance
0 High Speed : tf=0.5,as(Max.)
trr= 0.5ps (Max.)
0 Low Saturation Voltage E1
I '23d:0.5 23: o.s'
VCE(sat) =4.0V (Max.) ' 80i0.3
9 3.5ck 0.5 i
----------I
o Enhancement-Mode
. . 4t0.5 410.5 9.9;03 27f0.5
I L i H .
0 Includes a Complete Half Bridge 1n One 18:05 19:0_5W1810_5 ti
Package. - Pm l ' _I'
g r--, l - 2
o The Electrodes are Isolated from Case. N Tr' l H
EQUIVALENT CIRCUIT L 91t0.5 3333in
JEDEC -
CI E2 EIAJ -
TOSHIBA 2-94D1A
Weight : 202g
G1 E1 / C2 G2
(B1) (B2)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES uF20 V
DC I 25
Collector Current C A
lms ICP 50
DC I 25
Forward Current F A
lms IFM 50
Collector Power Dissipation (Tc=25°C) PC 250 W
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -40--125 T
Isolation Voltage V1501 2500 (AC 1 minute) V
Screw Torque (Terminal/ Mounting) - 3/ 3 N . m
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the aptplications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/5
TOSHIBA MG25Q2YS40
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i 20V, VCE = 0 - - i 10 ,aA
Collector Cut-off Current ICES VCE = 1200V, VGE =0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE(OFF) IC = 25mA, VCE = 5V 3.0 - 6.0
Collector-Emitter
Saturation Voltage VCE(sat) IC - MA, VGE - 15V - 3.0 4.0
Input Capacitance Cies VCE = 10V, VGE = 0, f = lMHz - 3000 - pF
Rise Time tr Cl - 0.3 0.6
- . 510 M'
Switching Time Turn on Time ton 153V C I N 0.4 0.8 ,us
Fall Time tf - 15V 0.2 0.5
Turn-off Time toff 600V 0.8 1.5
Forward Voltage VI? IF = 25A, VGE = 0 - 2.0 2.5 V
. IF = 25A, VGE = - 10V
Reverse Recovery Time trr di / dt=100 A /ps - 0.2 0.5 ps
T . t - - 0.5
Thermal Resistance Rth(j-c) rans1s or °C/W
Diode - - 1.3
1997-03-03 2/5
TOSHIBA
MG25Q2YS40
COLLECTOR CURRENT [Q (A)
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON EMITTER
15 Te = 25°C
PC=250W
l 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON EMITTER
Tc = 26"C
2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
COMMON EMITTER
VCE=5V
Te-- 125°C
2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMI'I‘TER VOLTAGE VCE (V)
COLLECTOR-EMI'I'I‘ER VOLTAGE VCE
VCE - VGE
COMMON EMITTER
Tc = - 40''C
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON EMITTER
Tc = 1 25°C
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COMMON EMITTER
RL = 240
Tc = 26'G
VCE, VGE - QG
GATE-EMITTER VOLTAGE VGE
80 120 160 200 240
CHARGE QG (nC)
1997-03-03 3/5
TOSHIBA
MG25Q2YS40
SWITCHING TIME (/18)
IF (A)
FORWARD CURRENT
CAPACITANCE C (p?)
SWITCHING TIME - IC
COMMON EMITTER
VCC = 600V, VGE = * 15V
RG=510, Tc=25°c
(h050 6 10 15 20 25
COLLECTOR CURRENT IC (A)
IF - VF
Tc=125°C 25 -40
COMMON CATHODE
VGE=5V
o 1 2 3 4
FORWARD VOLTAGE " (V)
COMMON
EMITTER
VGE--OV
f=1MHz
Tc=25°C
1.03 0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TlME (/18)
(X10ns)
PEAK REVERSE RECOVERY CURRENT
REVERSE RECOVERY TIME tr,
TRANSIENT THERMAL RESISTANCE
Rum) (°C/W)
SWITCHING TIME - RG
COMMON EMITTER
Vcc = 600V, 10 = 25A
VGE = i 15V, Tc = 25''C
3 6 10 30 60 100 300 500
GATE RESISTANCE RG (0)
trr, Irr - IF
COMMON CATHODE
dildt= 100A/ps
VGE = - 10V, Te = 25°C
5 10 15 20 25 3O
FORWARD CURRENT IF (A)
Rth(t) - tw
Tc=25°C
DIODE STAGE
TRANSISTER STAGE
IO" IO-l 1 10
PULSE WIDTH tw (s)
1997-03-03 4/5
TOSHIBA MG25Q2YS40
SAFE OPERATING AREA REVERSE BIAS SOA
,.9 IC MAX. 9
2 _ S) E
o yt. SINGLE o
M NONREPETITIVE M
g PULSE 'i',
Tc=25°C
M M . o
3 CURVES MUST BE d 133125 C
8 DERATED LINEARLY OPERATIO 8 VGE= i15v
1 WITH INCREASE IN
TEMPERATURE. RG=51n
0 1 3 10 30 100 300 1000 3000 . 0 200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 5/5
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