MG200Q2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.3µs (Max.) f@Inductive Load Low satur ..
MG20G6EL1 ,High Power Switching ApplicationsTOSHIBA {DISCRETE(OPTO} "ID 1)ull'1?Ti'ii!s0 UDLEELB l, rI9997250 TOSHIBA (DISCRETE/OPTO) 900 16213 ..
MG25Q2YS40 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.3-M5-FAST- ON- TAB #110'es, i 2-65.6d:0.3High Input ImpedanceHigh Speed :tf= 0.5ps (Ma ..
MG25Q6ES42 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.92.7i0.6ll .5+0.6 8 2:b0.3 '2155:}:03O The Electrodes are Isolated from Case. . >303 1 ..
MG25Q6ES50 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.- tb-u-trua-W/ ..
MG25Q6ES50A ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71+0.860'96+0;5,16.0 1 0.5w,1b.Z4iU.bO The Electrodes are Isolated from Case. comm "ll- ..
MIC6315-30D3UY , Open-Drain μP Reset Circuit
MIC6315-31D2UY , Open-Drain μP Reset Circuit
MIC6315-31D3U , Open-Drain μP Reset Circuit
MIC6315-31D3UY , Open-Drain μP Reset Circuit
MIC6315-31D3UY , Open-Drain μP Reset Circuit
MIC6315-31D4UY , Open-Drain μP Reset Circuit
MG200Q2YS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG200Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q2YS50 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3µs (Max.)
@Inductive Load Low saturation voltage
: VCE (sat) = 3.6V (Max.) Enhancement-mode Includes a complate half bridge in one ackage. The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Weight: 430g
Unit: mm
