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MG200Q1US41
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1US41 High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.5µs (Max.)
trr = 0.5µs (Max.) Low saturation voltage
: VCE (sat) = 4.0V (Max.) Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) Weight: 465g
Unit: mm
