MG200H1AL2 ,(DISCRETE/OPTO)---TOSHIBA .fIyirSCREyi'E/0PT01 =10 oE:lllmyri'ii!siuo P1iiiyi'n 3 Ill.9Q97250 TOSHIBA orscmzrE/tvr ..
MG200H1FL1A ,V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module---TOSHIBA .fIyirSCREyi'E/0PT01 =10 oE:lllmyri'ii!siuo P1iiiyi'n 3 Ill.9Q97250 TOSHIBA orscmzrE/tvr ..
MG200J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a complet ..
MG200Q1US41 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.5µs (Max.) ft = 0.5µs (Max.) rrLow sa ..
MG200Q1US51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.3µs (Max.) f@Inductive load Low satur ..
MG200Q2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.3µs (Max.) f@Inductive Load Low satur ..
MIC6315-26D3U , Open-Drain μP Reset Circuit
MIC6315-26D3UY , Open-Drain μP Reset Circuit
MIC6315-26D3UY , Open-Drain μP Reset Circuit
MIC6315-26D4U , Open-Drain μP Reset Circuit
MIC6315-26D4UY , Open-Drain μP Reset Circuit
MIC6315-29D2U , Open-Drain μP Reset Circuit
MG200H1AL2
(DISCRETE/OPTO)
TOSHIBA tIyirSceEyI'E/0PT()y
_9897250 TOSHIBA tDiSCRETE/t9PTO
'iitptii SEMICONDUCTOR
TECHNICAL DATA
H G 2 0 0 II 1 A L 2
M G 2 0 0 H 1 F L 1
. TOSHIBA CORPORATION
GTIAZA
- 285-
=m milniyri'ii!sto UDLEE'FI 3
900 16279
MG 2 0 Olil AL 2
MG2 0 OIII FL 1 A
Unit in mm
trr-ea-ag
rukezh.,
TOSHIBA
2-68D1A
Weight t 210g
Unit in mm
2-M6 19 8
L n "L,
TOSHIBA
2-9BBIA
Height t 420g
-- mu:-
TOSHIBA fl)ISCRETE/0pTOy an ~DE =m=17asn nanaau fl T
9097250 TOSHIBA tDrSi3RETEfOPTt3) 900 16280 DT-gg-BS
SEMICONDUCTOR MG 2 o 0.11 1 A I, 2
TECHNICAL DATA MG 2 0.0 H 1 FL 1 A ,
MAXIMUM RATINGS (Ta-25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage 1ICB10 600 ll
Collector-Emitter Voltage cho 600 ll
Collector-Emitter Sustaining Voltage Vch(SUS) 550 V
Emitter-Base Voltage . V3510 6 ll
DC Ic 200
Collector Current lms 1C 400 A
DC -rc 200
Base Current 1Bl 8 A
.', Collector Power Dissipation (rc=25°c) Pc 800 w
5 Junction Temperature T1 150 ''C
Storage Temperature Range Tstg -4t)"-125 “C
Isolation Voltage V1501 2500(AC 1 Minute) ll
Screw Torque (Tefminal M4/H6/Hount1ng) - 20/30/30 kg-cm
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBIO venlaeoov, IE-O - - 2.0 mA
Emitter Cut-off Current TEB10 V531=6V, Ic=0 - ... 400 mA
Co11eetor-Etaitter
Sustaining Voltage vCE0(SUS) Itp=th5A, L=4thn1I 550 - - ll
DC Current Gain hpg ch=5V. lc=ZOOA 80 - -
Collector-Emitter
Saturation Voltage Vcetsat) - - 2.o ll
Ic=200A, 131=6A
Base-Emittet
Saturation Voltage VBlE(sat) - - 2.7 v
Emitter-Collector Voltage VECO IE=200A, 131=0 - - 1.5 ll
Reverse Recovery Time trr -1c=200A, vBBl-av - - 2.0 as
VCE=300V _
Collector Output Capacitance Cobl Vc31-50V. 15:0 - 1670 - pF
f=lMHz
Turn-on Time ton INF“? Ian) OUTPUT - - 2.0
sons 2: ct
'Burl,, 12m) 3 .
Switching Time Storage Time tstg 0 Ttgal - - 12 As
vccasoov
Fall Time tf 1Btlr=-1stzr=6A - - 4.0
_ DUTY cycnn=05%
Thermal Resistance Transistor ... - 0 156
Rth(j-c) . “Clw
(Junction to Case) Diode - - 0.65
TOSHIBA CORPORATION
GTIA2A
h 286 -
TOSHIBA 4H)ISCRE:TE/0pT01. =10 DEVI] auwasn 001.5351 l T
I 9097250 TOSHIBA tDtSCfRETE/OPT0) _ 900 16281 013373:
aihn SEMICONDUCTOR MG2 0 0H 1 AL2
MG200H1FL1A
iitii'soife'i TECHNICAL DATA
a VCE - Ic VCE - "
50° SOO common
COLLECTOR—EMITTER VOLTAGE VCE (v)
cousc'ron-Emnm VOLTAGE Von (v)
o 80 160 24.0 320 MD At30 560 . “50 go 160 240 320 400 430 560
com.acrort CURRENT Ia (A) C0LL.ri'a0TOtt CURRENT It; (A)
l VCE - Tc
{ 500 COMMON
1 EMITTER
i A GOO Tc=lOD'C
f M 3000
g td, 1000
it so =
.4 500
2 so '5,
_< 300
'" i':
10 loo
ii! iii
'd G COMMON EMITTER
8 VGE=5V
I P 10
dt"',), 05 1 G 10 so 100 500
COLLECTOR CURRENT lg (A)
o 60 160 m 320 400 480 MO
COLLECTOR CURRENT Ic (A)
.TOSHIBA CORPORATION
TOSHIBA f01Sces:riivopros.
Asm-....--.-..--,
'erl 1)lrlr'uon'i'iesn nalbaaa 3 -
9097250 TOSHIBA (DISCRETE/OPTO) 90D 16282 DT-33-35'
giEith SEMICONDUCTOR MG 2 o o H 1 A L 2
. MG 2 0 0 H 1 F L 1 A
5iliiEt TECHNICAL DATA
VBE(sa.t) - I0 -10 - VEco
2A GO li?
8.: COMMON EMITTER v
E A I " 6 A J? COMMON COLLECTOR
tD " I
m tf a
tiii/i'',, ,
ttltr m
05 1 3 10 so 100 300 m
COLLECTOR CURRENT Is (A) 'il
SWITCHING CHARACTERISTIC g
t t , o as L6 . u :12
a B EMITTER COLLECTOR VOLTAGE VEGO (v)
12 SAFE OPERATING AREA
d, 1000
m ti00 19 MAX.(Punsan)w
z ml Io MAX.
E f’ loo (commuous)
P H 50
Ot COMMON EMITTER a
Vcc=300V ti
Ic=200A tD IO
IB=h6A tt$ ts
w a) ' 120 160 200 210 mo g 3
COLLECTOR CURE” I0 fa) g l swam: tloNREPli1rrr11nir
o 1 PULSE rc=25'c
- .REVERSE BIAS 80A 0
we as CURVES MUST BE DERATED
o3 LINEARLY mm INCREASE
C? m TEMPERATURE
V mo tll
o as 1 G 10 GO mo son 1000
H 320 CA9LLr.CTOR-EMTtNilR VOLTAGE VCR (v)
'le' 160
a TJSIZ5‘C
ti so -IB=12A
8 VBE=_6V -
o 100 200 300 400 soo 600 TOO
COLLECTOR-FR VOLTAGE VCE (V)
TOSHIBA CORPORATION
TOSHIBA tIyTStytEyI'E/()PT01
an oElil'uv-ri'ii!5iil numbeaa 5
9097250 TOSHIBA tDISCRETE/oPTO)'
SEMICONDUCTOR
TECHNICAL DATA
rrm “ s
BTIA2A
. s1...
tv.,'" .,' . _ ;-.l. ._..
_ x ‘Il'::-~‘;
TOSHIBA CORPORATION
900 16283
MG200HIAL2
MGZOOHIFLIA
or-si-ss
www.ic-phoenix.com
.
