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MG150Q2YS50ToshibaN/a6avaiGTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


MG150Q2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High speed : t = 0.3µs (Max) f @Inductive load Low satu ..
MG150Q2YS51 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMG150Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS51 High Power Switching
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MG15Q6ES51 ,N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS71 * 0.8 or16.0 d: 0.5 60.96 d: 0.5 0’9_ lla |1:94..nr. _ .b' .b.6,a+n,5.-F.iiFiLir1i1_ ..
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MG150Q2YS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG150Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS50

High Power Switching Applications
Motor Control Applications High input impedance High speed : tf = 0.3µs (Max) @Inductive load Low saturation voltage
: VCE (sat) = 3.6V (Max) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.
Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Weight: 255g
Unit: mm
ic,good price


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