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MG150J1JS50TOSHIBAN/a6avaiGTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


MG150J1JS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance Includes a comple ..
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MG150J1JS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1JS50

High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 0.30 µs (max) (IC = 150 A)
trr = 0.15 µs (max) (IF = 150 A) Low saturation voltage
: VCE (sat) = 2.70 V (max) (IC = 150 A)
Equivalent Circuit

Maximum Ratings (Ta = 25°C)
― 3/3
Unit: mm E2
E1/C2
E1 G1
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