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MG120V2YS40TOSHIBAN/a5avaiGTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications


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MG120V2YS40
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT
MG120V2YS40

High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode High speed : tf = 1.5µs (max) (IC = 120A)
trr = 0.6µs (max) (IF = 120A)
Equivalent Circuit

Maximum Ratings (Ta = 25°C)
― 3 / 3
Weight: 430g (typ.)
Unit: mm
ic,good price


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