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MG100Q1JS40
GTR Module Silicon N Channel IGBT
MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q1JS40 High Power Switching Applications
Chopper Applications High input impedance
��High speed : tf = 0.5µs (max)
trr = 0.5µs (max)
��Low saturation voltage
: VCE (sat) = 4.0V (max) Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) ― 3 / 3
Unit: mm
