MG100J7KS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate ..
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MG100J7KS50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG100J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT
MG100J7KS50 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT
: VCE (sat) = 2.5 V (max) (@IC = 100 A)
: tf = 0.5 µs (max) (@IC = 100 A)
: trr = 0.3 µs (max) (@IF = 100 A)
Equivalent Circuit Weight: 520g (typ.)
Unit: mm
