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MG100J6ES50
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG100J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT
MG100J6ES50 High Power Switching Applications
Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A) Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 100A)
Equivalent Circuit Weight: 505g (Typ.)
Unit: mm
000707EAA1
