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MG100J1ZS40
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT
MG100J1ZS40 High Power Switching Applications
Motor Control Applications High input impedance High spee : tf = 0.35µs (max) trr = 0.15µs (max) Low saturation voltage
: VCE (sat) = 3.5V (max) Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C) Weight: 202g
Unit: mm
