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MG100J1BS11
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA MG1OOJ1BS11
TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT
MG'il00J'ilBS'il1
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
MOTOR CONTROL APPLICATIONS.
High Input Impednace
3 5.53: 0.2
0 High Speed : tf= 1.0ps (Max.) (10:100A)
0 Low Saturation Voltage
.' VCE(sat) = 2.7V (Max.) (10 = 100A)
o Enhancement-Mode
3 Ltid: 0.4
o The Electrodes are Isolated from Case. mth-------- . r1?t-aht
' [s '
'rr-i, 1'; l I I l I
EQUIVALENT CIRCUIT 1'?
G (B) o-l J EDEC -
E EIAJ -
TOSHIBA 2-33F1A
Weight : 86g
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES l 20 V
DC I 100
Collector Current C A
lms ICP 200
Collector Power Dissipation (Tc: 25°C) PC 300 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -40--125 "C
Isolation Voltage V1501 2500 (AC 1 Minute) V
Screw Torque (Terminal/ Mounting) - 2/ 3 Nun
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-03-03 1/4
TOSHIBA MG1OOJ1BS11
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = , 20V, VCE = 0 - - , 500 nA
Collector Cut-off Current ICES VCE =600V, VGE =0 - - 1.0 mA
Gate-Emitter Cut-off Voltage VGE(OFF) VCE = 5V, IC = 100mA 3.0 - 6.0
Collector-Emi)
I =100A, V =15V - 2. 2.
Saturation Voltage VCE(sat) C GE 3 7
VCE = 10V, VGE = 0,
Input Capacitance Cies f-- lMHz - 8200 - pF
Rise Time tr - 0.3 0.8
240 C}
Turn-on Time ton 15V cr"-";):'-] CQ - 0.4 1.0
Switching Time 0 IL]. ps
Fall Time tf - 15V 300V - 0.6 1.0
Turn-off Time toff - 1.0 1.6
Thermal Resistance Rth(i-c) - - - 0.41 "C/ W
1997-03-03 2/4
TOSHIBA
1c (A)
COLLECTOR CURRENT
COLLECTOR-E MI'I'I‘ER VOLTAGE
VCE (V)
10 (A)
COLLECTOR CURRENT
IC - VCE
15 COMMON EMITTER
To = MT
COLLECTOREMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 25°C
IC=40A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VGE
// COMMON
(ht EMITTER
K - VCE=5V
c.,,,:,:,:,',,''
4 8 12
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR-EMI'ITER VOLTAGE
VCE (V)
COLLECTOR—EMITTER VOLTAGE
MG1OOJ1BS11
VCE - VGE
COMMON
EMITTER
Te = - 40°C
10 -- 40A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
Tc = 125°C
IC=40A
4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
VCE,VGE - QG
COMMON
EMITTER
RL-- an 8
Tc = 25°C
100 200 300 400 500
CHARGE QG (nC)
1997-03-03 3/4
TOSHIBA
MG1OOJ1BS11
SWITCHING TIME - IC
a' 0.5
s.5, tr
i.'i COMMON EMITTER
E VCC=300V
m 0.1 VGE= i15V
RG--24n
Tc=25°C
0 20 40 60 80 100
COLLECTOR CURRENT IC (A)
C - VCE
0 3000
< 1000
ti COMMON
<2 Coes
% EMITTER
O 300 VGE=0
100 f 1MHz res
Tc=25°C
0.3 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
SAFE OPERATING AREA
500 1111 I [lflllll
300 IC MAX.(PULSED)X
A 1 I I 1 Ill
V IC MAX. N N 50““
9 100 (CONTINUOUS)
E ''sll I \ _
2 so mg:
m - loops"..
g 30 - DC OPEREATION
D I l lll I l l I l l l N
g X SINGLE lmsx 't
o 10 NONREPETITIVE \
t PULSE Tc=25°C
E 5 CURVES MUST BE "
g 3 DERATED LINEARLY WITH
0 INCREASE IN
TEMPERATURE. l
0.5 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME (,us)
THERMAL TRANSIENT RESISTANCE
COLLECTOR CURRENT 10 (A)
Rum) <°CIW)
SWITCHING TIME - RG
COMMON EMITTER
VCC = 300V
VGE = , 15V
Ic = 100A
Te = 25°C
3 10 30 100 300
GATE RESISTANCE RG (n)
Rth (t) - tw
10-3 10a url 100 101
PULSE WIDTH tw (s)
REVERSE BIAS SOA
1 Tj§125°C
VGE = i 15V
0.3 R(}=24n
0 100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
1997-03-03 4/4
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