| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MG064S18A400RP |
|
N/a |
8000 |
 |
MultiGuard (2&4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays – ESD Protection for CMOS and Bi Polar Systems |
| MG064S18A400RP |
EPCOS |
N/a |
8000 |
|
MultiGuard (2&4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays – ESD Protection for CMOS and Bi Polar Systems |
MG0800 DENSO
MG0810 DENSO
MG0820 DENSO
MG0900 DENSO
MG0910 N/A
MG0930 N/A
MG0940 DENSO
MG0950 DENSO
MG0980 N/A
MG100 NEC
MG1008 MG
MG100A1AL2
MG100G1AL1 TOSHIBA
MG100G1AL2 TOSHIBA
MG100G1AL2-4 Toshiba
MG100G1AL3 TOSHIBA
MG100G1AL3-5 Toshiba
MG100G2CH1 TOSHIBA
MG100G2CL1 TOSHIBA, TECHNICAL DATA
MG100G2CL2 TOSHIBA
MG100G2DL1 TOSHIBA, TECHNICAL DATA
MG100G2YS1 TOSHIBA
MG100H1BS1 TOSHIBA
MG100H2CL1 TOSHIBA
MG100H2DL3 TOSHIBA
MG100H2YS1 TOSHIBA
MG100H2ZS1 Toshiba
MG064S18A400RP , MultiGuard (2&4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays – ESD Protection for CMOS and Bi Polar Systems
MG100J1BS11 ,N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)APPLICATIONS.8.0:|:0.5ll l fstie,-3-M4Ere-u Tman Tmmnjmn..-8.0:tJ111811 .Lllpul: uupcuuaccHigh Spee ..
MG100J1ZS40 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications High input impedance High spee : t = 0.35µs (max) f t = 0.15µs (max) rr Low ..
MG100J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications The electrodes are isolated from case. High input impedance. Includes a comple ..
MG100J2YS50 ,GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsMG100J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 Unit: mmHigh Power Switching
MIC5801BV , 4/8-Bit Parallel-Input Latched Drivers
MIC5801BV , 4/8-Bit Parallel-Input Latched Drivers
MIC5801BV , 4/8-Bit Parallel-Input Latched Drivers
