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MDS35-800-MDS50-1200-MDS50-800-MDS80-800
DIODE / SCR MODULE
1/7
MDS35/ 50/ 80SeriesDIODE/ SCR MODULE
December 2000-Ed:4
MAIN FEATURES:
DESCRIPTIONPackagedin ISOTOP modules,the MDS Seriesis
basedonthe half-bridge SCR-diode configuration.
They are suitablefor high power applications,
using phase controlled bridges, suchas soft-start
circuits, welding equipment, motor speed
controller. The compactnessof the ISOTOP
package allows high power density and optimized
power bus connections. Thanksto their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying withUL standards (File
ref: E81734).
ABSOLUTE RATINGS (limiting values)
ISOTOPisa registred trademarkof STMicroelectronics
PIN CONNECTIONS
MDS35/50/80 Series
ELECTRICAL CHARACTERISTICS(Tj= 25°C, unless otherwise specified)
SCR
DIODE
MDS35/50/80 Series
THERMAL RESISTANCES
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Note:xxx= voltage
MDS35/50/80 Series
Fig. 1-1: Maximum average power dissipation
versus average on-state current (thyristoror
diode, sinusoïdal waveform).
Fig. 1-2: Maximum average power dissipation
versus average on-state current (thyristoror
diode, rectangular waveform).
Fig. 1-3: Maximum total power dissipation versus
output currenton resistiveor inductive load
(Single phase bridge rectifier,two packages).
Fig. 1-4: Maximum total power dissipation versus
output current (Three phase bridge rectifier, three
packages).
Fig. 2-1: Average on-state current versus case
temperature (thyristor or diode, sinusoïdal
waveform).
Fig. 2-2: Average on-state current versus case
temperature (thyristoror diode, rectangular
waveform).
MDS35/50/80 Series
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration.
Fig.4: Relative variationof gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5-1: Surge peak on-state current versus
numberof cycles (MDS35 and MDS50).
Fig. 5-2: Surge peak on-state current versus
numberof cycles (MDS80).
Fig. 6-1: Non-repetitive surge peak on-state
current fora sinusoidal pulse with width<10 ms, and corresponding valueofI²t
(MDS35 and MDS50).
Fig. 6-2: Non repetitive surge peak on-state
current fora sinusoidal pulse with width<10 ms, and corresponding valueofI²t
(MDS80).
MDS35/50/80 Series
Fig. 7-1: On-state characteristics (thyristoror
diode, maximum values) (MDS35).
Fig. 7-2: On-state characteristics (thyristoror
diode, maximum values) (MDS50).
Fig. 7-3: On-state characteristics (thyristoror
diode, maximum values) (MDS80).
