MCR8N ,Silicon Controlled RectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted)J4Rating Symbol Value Unit(1)Peak Repetitive Off–S ..
MCR8N. ,Silicon Controlled RectifierELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MCR8SD ,Sensitive Gate Silicon Controlled RectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted)J1Rating Symbol Value Unit 23(1)Peak Repetitive Of ..
MCR8SM ,Sensitive Gate Silicon Controlled RectifierDesigned primarily for half-wave ac control applications, such asmotor controls, heating controls, ..
MCR8SM ,Sensitive Gate Silicon Controlled Rectifier2MCR8SD, MCR8SM, MCR8SNVoltage Current Characteristic of SCR+ CurrentAnode +VSymbol ParameterTMV Pe ..
MCR8SN ,Sensitive Gate Silicon Controlled RectifierELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MIC2776N-BM5 , Micro-Power Low Voltage Supervisor
MIC2778-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779H-1BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MIC2779L-2BM5 , Voltage Monitor with Adjustable Hysteresis Preliminary Information
MCR8N-MCR8N.
Silicon Controlled Rectifier
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Preferred Device--
Reverse Blocking ThyristorsDesigned primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed. Blocking Voltage of 600 thru 800 Volts On–State Current Rating of 8 Amperes RMS at 80°C High Surge Current Capability — 80 Amperes Rugged, Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design High Immunity to dv/dt — 100 V/μsec Minimum at 125°C Device Marking: Logo, Device Type, e.g., MCR8N, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
