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MCR218-4-MCR218-6 Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
MCR218-4 |MCR2184ONN/a10000avaiThyristor
MCR218-6 |MCR2186ONN/a10000avaiThyristor


MCR218-4 ,ThyristorMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit(1)Peak Repetitive Off–St ..
MCR218-6 ,ThyristorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)JCharacteristic Symbol Min Typ Max Uni ..
MCR22-2 ,Silicon Controlled RectifiersTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 50 °C/W ..
MCR225 ,Silicon Controlled Rectifiers**Order this documentSEMICONDUCTOR TECHNICAL DATA by MCR22-2/D** ** ** **. . . designed and tested ..
MCR225-2FP ,Silicon controlled rectifierMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
MCR22-6 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value UnitPeak Repetitive Forward ..
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information
MIC2563A-1BSM , Dual Slot PCMCIA/CardBus Power Controller Preliminary Information


MCR218-4-MCR218-6
Thyristor
-Preferred Device--
Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed. Glass-Passivated Junctions Blocking Voltage to 400 Volts TO-220 Construction — Low Thermal Resistance, High Heat
Dissipation and Durability Device Marking: Logo, Device Type, e.g., MCR218–2, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
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