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MCM67H518FN9MOTOROLAN/a7avai32K x 18 Bit BurstRAM Synchronous Fast Static RAM


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MCM67H518FN9
32K x 18 Bit BurstRAM Synchronous Fast Static RAM
32K x 18 Bit BurstRAM
Synchronous Fast Static RAM
With Burst Counter and Self–Timed Write

The MCM67H518 is a 589,824 bit synchronous fast static random access
memory designed to provide a burstable, high–performance, secondary cache
for the i486 and Pentium microprocessors. It is organized as 32,768 words
of 18 bits, fabricated with Motorola’s high–performance silicon–gate BiCMOS
technology. The device integrates input registers, a 2–bit counter, high speed
SRAM, and high drive capability outputs onto a single monolithic circuit for re-
duced parts count implementation of cache data RAM applications. Synchro-
nous design allows precise cycle control with the use of an external clock (K).
BiCMOS circuitry reduces the overall power consumption of the integrated func-
tions for greater reliability.
Addresses (A0 – A14), data inputs (D0 – D17), and all control signals except
output enable (G) are clock (K) controlled through positive–edge–triggered
noninverting registers.
Bursts can be initiated with either address status processor (ADSP) or address
status cache controller (ADSC) input pins. Subsequent burst addresses can be
generated internally by the MCM67H518 (burst sequence imitates that of the
i486 and Pentium) and controlled by the burst address advance (ADV) input pin.
The following pages provide more detailed information on burst controls.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased flexibility for incoming signals.
Dual write enables (LW and UW) are provided to allow individually writeable
bytes. LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17
(the upper bits).
This device is ideally suited for systems that require wide data bus widths and
cache memory. See Figure 2 for applications information. Single 5 V ± 5% Power Supply Fast Access Times: 9/10/12 ns Max Byte Writeable via Dual Write Enables Internal Input Registers (Address, Data, Control) Internally Self–Timed Write Cycle ADSP, ADSC, and ADV Burst Control Pins Asynchronous Output Enable Controlled Three–State Outputs Common Data Inputs and Data Outputs 3.3 V I/O Compatible High Board Density 52–Lead PLCC Package ADSP Disabled with Chip Enable (E) – Supports Address Pipelining
BurstRAM is a trademark of Motorola, Inc.
i486 and Pentium are trademarks of Intel Corp.
PIN ASSIGNMENT
DQ9
VCC
DQ8
DQ6
DQ7
VSS
DQ4
DQ5
DQ2
DQ3
VSS
VCC
DQ0
DQ1
VCC
VSS
VSS
VCC
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17A7EUW K A8A9A10LA3A2
A13A14 A12 A0
ADVADSCADSP
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