MC74VHC00D ,Quad 2-Input NAND GateMAXIMUM RATINGS*Symbol Parameter Value UnitThis device contains protectionÎÎÎcircuitry to guard aga ..
MC74VHC00DR2 ,Quad 2-Input NAND GateMAXIMUM RATINGS (Note 1)Symbol Parameter Value UnitV Positive DC Supply Voltage -0.5 to +7.0 VCCV D ..
MC74VHC00DR2 ,Quad 2-Input NAND Gateoutput which provides high noise immunity and stable output. Theinputs tolerate voltages up to 7 V, ..
MC74VHC00DR2G , Quad 2−Input NAND Gate
MC74VHC00DT ,Quad 2-Input NAND GateELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fÎÎT = -40 to T = -55 toA AÎÎÎÎ85°C +125°CT = 25 ..
MC74VHC00DT ,Quad 2-Input NAND Gate3MC74VHC00TEST POINTVCCA or BOUTPUT50%DEVICEGNDUNDERt tPLH PHL C *LTESTY50% VCC*Includes all probe ..
MDP1603-101G ,Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 SchematicsELECTRICAL SPECIFICATIONSMODEL/ SCHEMATIC RESISTOR RESISTANCE STANDARD TEMPERATURE TCR WEIGHTNO. OF ..
MDP1645 ,Dual Inline Package, Molded DIP, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Available in Tube Pack, Reduces Assembly Costs For Technical Questions, contact: ff2aresistors Document Number: 3151244 Revision 25-Oct-00MDP 164 ..
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MDS50-1200 ,DIODE / SCR MODULEFEATURES:Symbol Value UnitI50-70-85 AT(RMS)V /V800 and 1200 VDRM RRMI 50 and 100 mAGTDESCRIPTIONPac ..
MDS50-800 ,DIODE / SCR MODULEMDS35/50 /80SeriesDIODE / SCR MODULEMAIN
MC74VHC00D
Quad 2-Input NAND Gate
SEMICONDUCTOR TECHNICAL DATA -
The MC74VHC00 is an advanced high speed CMOS 2–input NAND gate
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while maintaining
CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output
which provides high noise immunity and stable output. The inputs tolerate
voltages up to 7V, allowing the interface of 5V systems to 3V systems. High Speed: tPD = 3.7ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 2μA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 0.8V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; Machine Model > 200V Chip Complexity: 32 FETs or 8 Equivalent GatesY1A1
LOGIC DIAGRAMB1Y2A2B2Y3A3B3Y4A4B4
Y = AB
Pinout: 14–Lead Packages (Top View)VCC B4 A4 Y4 B3 A3 Y3 B1 Y1 A2 B2 Y2 GND
