MC33153P ,SINGLE IGBT GATE DRIVERELECTRICAL CHARACTERISTICS (continued) (V = 15 V, V = 0 V, Kelvin Gnd connected to V . For typical ..
MC33154P ,SINGLE IGBT HIGH CURRENT GATE DRIVERELECTRICAL CHARACTERISTICS (V = 20 V, V = 0 V, Kelvin Gnd connected to V . For typical valuesCC EE ..
MC33160P ,MICROPROCESSOR VOLTAGE REGULATOR/ SUPERVISORY CIRCUITMAXIMUM RATINGSRating Symbol Value UnitPower Supply Voltage V 40 VCCChip Disable Input Voltage (Pin ..
MC33161 ,Universal Voltage Monitorhttp://onsemi.com2MC34161, MC33161
MC33161 ,Universal Voltage MonitorELECTRICAL CHARACTERISTICS (V = 5.0 V, for typical values T = 25°C, for min/max values T is the ope ..
MC33161D ,Universal Voltage MonitorThermal Characteristics (Note 1)P Suffix, Plastic Package, Case 626Maximum Power Dissipation @ T = ..
MC74HC1G00DFT2 ,Single 2-Input NAND GateELECTRICAL CHARACTERISTICS (Input t = t = 6.0 ns)r fT = 25C T 85C 55C T 125CA A ASymbol ..
MC74HC1G00DFT2G ,Single 2-Input NAND Gate• High Noise Immunity• Balanced Propagation Delays (t = t )PLH PHL MARKINGDIAGRAMS• Symmetrical Out ..
MC74HC1G00DTT1 ,Single 2-Input NAND GateELECTRICAL CHARACTERISTICSV T = 25C T 85C 55C T 125CCC A A ASymbol Parameter Test Condit ..
MC74HC1G02 ,Single 2 Input NOR GateMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
MC74HC1G02DFT1 ,Single 2 Input NOR Gate3MC74HC1G02t tf rINPUTINPUTOUTPUTVCCA or B 90%50%10%CGNDL*t tPLH PHL90%50%10%OUTPUT Y*Includes all ..
MC74HC1G02DFT1G ,Single 2 Input NOR GateELECTRICAL CHARACTERISTICS (Input t = t = 6.0 ns)r fT = 25C T 85C 55C T 125CA A ASymbol ..
MC33153-MC33153P
Single IGBT Gate Driver
Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control, brushless
dc motor control and uninterruptable power supplies. Although
designed for driving discrete and module IGBTs, this device offers a
cost effective solution for driving power MOSFETs and Bipolar
Transistors. Device protection features include the choice of
desaturation or overcurrent sensing and undervoltage detection. These
devices are available in dual–in–line and surface mount packages and
include the following features: High Current Output Stage: 1.0 A Source/2.0 A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for IGBT’s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors
Representative Block DiagramThis device contains 133 active transistors.
Fault
Output
Current
Sense
Input
Kelvin
Gnd
Fault
Blanking/
Desaturation
Input
Drive
Output
Input
VEE
VCC
