MC14501BCL ,Dual 4-Input NAND Gate, 2-Input NOR/OR Gate, 8-Input AND/NAND GateLOGIC DIAGRAMI , Input or Output Current (DC or Transient), ± 10 mAin IoutÎÎ(POSITIVE LOGIC)per Pin ..
MC14501BCL ,Dual 4-Input NAND Gate, 2-Input NOR/OR Gate, 8-Input AND/NAND Gate**SEMICONDUCTOR TECHNICAL DATA *Dual 4–Input “NAND” Gate L SUFFIXCERAMIC2–Input “NOR/OR” GateCASE ..
MC14501BCL ,Dual 4-Input NAND Gate, 2-Input NOR/OR Gate, 8-Input AND/NAND GateMAXIMUM RATINGS* (Voltages Referenced to V )SSMC14XXXBD SOICÎÎSymbol Parameter Value UnitT = – 55° ..
MC145026D ,Encoder and Decoder PairsMAXIMUM RATINGS* (Voltages Referenced to V )SSThis device contains protection circuitry toRating Sy ..
MC145026D ,Encoder and Decoder PairsMAXIMUM RATINGS* (Voltages Referenced to V )SSThis device contains protection circuitry toRating Sy ..
MC145026P ,Encoder and Decoder PairsElectrical Characteristics tables orPin Descriptions section.MOTOROLA MC145026•MC145027•MC145028•SC ..
MC68HC705C9ACB ,Microcontrollers
MC68HC705C9ACB ,Microcontrollers
MC68HC705C9ACP ,Microcontrollers
MC68HC705C9ACP ,Microcontrollers
MC68HC705C9ACP ,Microcontrollers
MC68HC705CT4FN , General Release Specification
MC14501BCL
Dual 4-Input NAND Gate, 2-Input NOR/OR Gate, 8-Input AND/NAND Gate
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Dual 4–Input “NAND” Gate
2–Input “NOR/OR” Gate
8–Input “AND/NAND” GateThe MC14501UB is constructed with MOS P–channel and N–channel
enhancement mode devices in a single monolithic structure. These
complementary MOS logic gates find primary use where low power
dissipation and/or high noise immunity is desired. Additional characteristics
can be found on the Family Data Sheet. Diode Protection on All Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc Logic Swing Independent of Fanout Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎ Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125C
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125C
CIRCUIT SCHEMATIC(5) 4
(9) 3
(7) 2
(6) 1
13 (10)
VSS8
VDD
VSS
Numbers in parenthesis are for second 4–input gate.
SEMICONDUCTOR TECHNICAL DATA
