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MC14000UBCLMOTON/a70avaiDual 3-Input "NOR" Gate Plus Inverter
MC14000UBCLMOT ?N/a6avaiDual 3-Input "NOR" Gate Plus Inverter


MC14000UBCL ,Dual 3-Input "NOR" Gate Plus Inverter**SEMICONDUCTOR TECHNICAL DATA* * * *L SUFFIX* **CERAMICCASE 632The MC14000UB dual 3–input NOR gat ..
MC14000UBCL ,Dual 3-Input "NOR" Gate Plus InverterMaximum Ratings are those values beyond which damage to the device may occur.ÎÎÎ4 6†Temperature Der ..
MC14001 ,B-Suffix Series CMOS Gates**SEMICONDUCTOR TECHNICAL DATA*#** **#" **"**#$ ** **! * **"*!The UB Series logic gates are constr ..
MC14001B ,Quad 2-Input NOR GateMaximum Ratings are those values beyond which damage to the device may occur.*%** !%$ **$*ÎÎΆTem ..
MC14001BCL ,Quad 2-input NOR gateMAXIMUM RATINGS* (Voltages Referenced to V )SS "*!** * !%$ **$*ÎÎSymbol Parameter Value UnitÎÎÎÎÎ ..
MC14001BCP ,Quad 2-Input NOR GateMAXIMUM RATINGS* (Voltages Referenced to V )SS "*!** * !%$ **$*ÎÎSymbol Parameter Value UnitÎÎÎÎÎ ..
MC68000P16 ,Microprocessor, 16-/ 32-bit data and address registers, 16-Mbyte direct addressing range, memory-mapped input/output (I/O), 14 addressing modes, 16MHz
MC68000R12 ,Microprocessor, 16-/ 32-bit data and address registers, 16-Mbyte direct addressing range, memory-mapped input/output (I/O), 14 addressing modes, 12MHz
MC68000RC10 ,Microprocessor, 16-/ 32-bit data and address registers, 16-Mbyte direct addressing range, memory-mapped input/output (I/O), 14 addressing modes, 10MHz
MC68000RC8 ,Microprocessor, 16-/ 32-bit data and address registers, 16-Mbyte direct addressing range, memory-mapped input/output (I/O), 14 addressing modes, 8MHz
MC68008FN10 ,Microprocessor, 16-/ 32-bit data and address registers, 16-Mbyte direct addressing range, memory-mapped input/output (I/O), 14 addressing modes, 10MHz
MC68008FN10 ,Microprocessor, 16-/ 32-bit data and address registers, 16-Mbyte direct addressing range, memory-mapped input/output (I/O), 14 addressing modes, 10MHz


MC14000UBCL
Dual 3-Input "NOR" Gate Plus Inverter
--The MC14000UB dual 3–input NOR gate plus inverter is constructed with
MOS P–channel and N–channel enhancement mode devices in a single
monolithic structure. These complementary MOS logic gates find primary
use where low power dissipation and/or high noise immunity is desired. Diode Protection on All Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc Logic Swing Independent of Fanout Pin–for–Pin Replacement for CD4000UB
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ÎÎÎ Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125C
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125C
CIRCUIT SCHEMATIC
111213 87 10VSS
VDD
SEMICONDUCTOR TECHNICAL DATA
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