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MBRS320TR
20V 3A Schottky Discrete Diode in a SMC package
International
15212 Rectifier
Bulletin PD-20645 rev.D 03/03
MBRS320
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics MBRS320 Units
0033:1293“ 3.0 A
VRRM 20 V
|FSM @tp=5ps sine 820 A
vF @3.0Apk,TJ=125°C 0.36 v
TJ range - 65 to150 ''C
Description/ Features
The MBRS320 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
. Small foot print, surface mountable
. Very low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
2.00 (.079)
0.76 (.030)
1.52 (.060)
2.75 (A08)
3.15 (.124)
2.62 (.103)
Device Marking: IR32
6.60 (.260)
7.11 (.280)
fifi /—\ .305 (.012)
.102 (.004)
.203 (.008)
7.75 (.305)
8.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
5.59 (.220)
6.22 (.245)
CATHODE ANODE
.152 (.006) I C) Ci) j
Ci) POLARITY G) PART NUMBER
MBRS320 International
Bulletin PD-20645 rev.D 03/03 IEER Rectifier
Voltage Ratings
Part number MBRS320
VR Max. DC Reverse Voltage (V) 20
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IHAV) Max.Average Forward Current 3.0 A 50% duty cycle@TL=136°C,rectangular wave form
IFSM Max.PeakOneCycle Non-Repetitive 820 5ps Sineor3ps Rect.pulse Following {any rated
load condition and
Surge Current 80 10ms Sineor6ms Rect. pulse with rated VRRM applied
EAS Non Repetitive Avalanche Energy 4 mJ TJ=25°C, IAS=1.OA, L=8mH
|AR Repetitive Avalanche Current 1.0 A Current decayinglinearlytozeroin1 psec
Frequencylimited by T, max.Va =1.5xVrtypical
Electrical Specifications
Parameters Typ. Max. Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.41 0.45 V @ 3A T = 25 "C
0.45 0.53 v © 6A J
0.29 0.36 V @ 3A
0.35 0.46 v @ 6A T, = 125 "C
|RM Max. Reverse Leakage Current (1) 0.04 0.5 mA T J = 25 "C
8.0 20 mA T, = 100 "C VR = rated v,,
23 35 mA T, = 125 "C
c, Typical Junction Capacitance 360 - pF VR = 5VDc (test signal range 100kHz to
1Mhz), @ 25°C
LS Typical Series Inductance 3.0 - nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 VI us (Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T J Max.Junction Temperature Range (*) -65 to 150 "C
stg Max. Storage Temperature Range -65 to 150 ''C
Re,, Max. Thermal Resistance Junction 12 °C/W DC operation
to Lead (**)
Rth0A Max. Thermal Resistance Junction 46 "C/W
to Ambient
Wt Approximate Weight 0.24(0.008) gr(oz)
Case Style SMC Similar DO-214AB
Device Marking IR32
C) dP_tot < 1 thermal runaway condition foradiode on its own heatsink C') Mounted 1 inch square PCB
dT] Rth(j-a)
2
