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MBRS120TR
20V 1A Schottky Discrete Diode in a SMB package
Bulletin PD-20644 rev.D 03/03
International
IsaR Rectifier MBRS120
SCHOTTKY RECTIFIER 1 Amp
Major Ratings and Characteristics Description/Features
Characteristics MBRS120 Units The MBRS120 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
|F(AV) Rectangular 1.0 A drives, switching power supplies, converters, free-wheeling
waveform . . .
diodes, battery charging, and reverse battery protection.
VRRM 20 V . Small foot print, surface mountable
I t =5 S sine 310 A . Very low forward voltage drop
FSM © p- p I . High frequency operation
o . Guard ring for enhanced ruggedness and long term
v, @1.0Apk, TJ=125 C 0.35 V reliability
To range - 65to 150 °C
Device Marking: IR12 CATHODE ANODE
5 (.085) 3.80 (.150) [ C) Cj)
0 (.071) 3.30 (.130)
4.70 (.185) Ci) POLARITY (i) PART NUMBER
4.10 (.161)
2.5 TYP. SOLDERING PAD
4,""/i (.098TY)
2.40(.094)
1.90(.075) _il-,_s-,,-y/ i] -g\ -
ss,s,1,rr---vtrtij-yh"/ili2s)) J¥% P7
_ 0.15 (.006) 2.0 TYP.
030) .220) (.079 TYP.) 4 2(A65)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
MBRS120
Bulletin PD-20644 rev.D 03/03
International
IEER Rectifier
Voltage Ratings
Part number
MBRS120
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IHAV) Max.Average Forward Current 1.0 A 50% duty cycle@TL=138°C,rectangular waveform
|FSM Max. Peak One Cycle Non-Repetitive 310 5ps Sine or 3ps Rect. pulse Following any rated
load condition and
Surge Current 40 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAs Non Repetitive Avalanche Energy 2.0 mJ TJ = 25 "C, lAS = 1A, L = 4mH
la, Repetitive Avalanche Current 0.8 A Current decayinglinearlytozeroin1 psec
Frequency limited by T, max. Va =1.5xVrtypical
Electrical Specifications
Parameters Typ. Max. Units Conditions
VFM Max. Forward Voltage Drop (1) 0.42 0.45 V @ IA T = 25 "C
0.46 0.52 v @ 2A J
0.33 0.37 V @ 1A
0.39 0.45 v @ 2A TJ = 100 "C
0.30 0.35 V @ 1A
T J = 125 "C
0.36 0.43 V @ 2A
Ira, Max. Reverse Leakage Current (1) 0.015 0.2 mA T J = 25 "C
2.0 6.0 mA T, = 100 "C VR = rated VR
7.0 20 mA T, =125 "C
c, Typical Junction Capacitance 110 - pF VR = 5V0c (test signal range 100kHz to
1Mhz), @ 25°C
LS Typical Series Inductance 2.0 - nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 W us (Rated VR)
(1) Pulse Wldth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T J Max.Junctjon Temperature Range (*) -65 to 150 "C
Tstg Max. Storage Temperature Range -65 to150 ''C
Re, JL Max.Thermal Resistance Junction 30 "CAN DC operation
to Lead C')
RmJA Max. Thermal ResistanceJunction 80 °C/W
to Ambient
Wt Approximate Weight 0.10(0.003) gr(oz)
Case Style SMB Similar DO-214AA
Device Marking IR12
(*) dPt_ot < 1 thermal runaway conditionforadiode on its own heatsink (") Mounted 1 inch square PCB
dT] Rth(1-a)
