MBRP3010N ,Schottky Barrier RectifierFeatures• Low forward voltage drop• High frequency properties and switching speed• Guard ring for o ..
MBRP3010NTU ,Schottky Barrier RectifierApplicationsTO-220• Switched mode power supply 1 2 3• Freewheeling diodes 1. Anode 2.Cat ..
MBRP3045N ,Schottky Barrier RectifierMBRP3045NMBRP3045N
MBRP3045N ,Schottky Barrier RectifierFeatures Low forward voltage drop High frequency properties and switching speed Guard ring for o ..
MBRP3045NTU ,Schottky Barrier RectifierApplicationsTO-220 Switched mode power supply 1 2 3 Freewheeling diodes 1. Anode 2.Cat ..
MBRP3045NTU ,Schottky Barrier RectifierApplicationsTO-220 Switched mode power supply 1 2 3 Freewheeling diodes 1. Anode 2.Cat ..
MC1709CP1 , MONOLITHIC OPERATIONAL AMPLIFIER
MC1710 ,Differential Voltage ComparatorsMAXIMUM RATINGS (TA = +250C unless otherwise noted"G SUFFIX VMETAL PACKAGE EECASE 601-04L SUFFIXCER ..
MC1723BD ,Voltage RegulatorOrder this document by MC1723C/D* * The MC1723C is a positive or negative voltage regulator designe ..
MC1723CD ,Voltage RegulatorMAXIMUM RATINGS (T = +25°C, unless otherwise noted.)ARating Symbol Value UnitPulse Voltage from V t ..
MC1723CDR2 ,Voltage RegulatorMAXIMUM RATINGS (T = +25°C, unless otherwise noted.)ARating Symbol Value UnitPulse Voltage from V t ..
MC1723CG ,V(out): 2-37Vdc; I(out): 150mA; silicon voltage regulatorThermal CharacteristicsMastic PackageTA = +25%Derate above TA = +25°CThermal Resistance, Junction t ..
MBRP3010N-MBRP3010NTU
Schottky Barrier Rectifier
MBRP3010N MBRP3010N Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications TO-220 • Switched mode power supply 1 2 3 • Freewheeling diodes 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings T =25° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 100 V RRM V Maximum DC Reverse Voltage 100 V R I Average Rectified Forward Current @ T = 105°C30 A F(AV) C I Non-repetitive Peak Surge Current (per diode) 250 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature -65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case (per diode) 1.7 °C/W θJC Electrical Characteristics (per diode) Symbol Parameter Value Units V Maximum Instantaneous Forward Voltage V FM * I = 15A T = 25 °C 0.85 F C I = 15A T = 125 °C 0.67 F C I = 30A T = 25 °C 1.05(TYP.) F C I = 30A T = 125 °C 0.80 F C I Maximum Instantaneous Reverse Current mA RM * @ rated V T = 25 °C 1 R C T = 125 °C 20 C * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2004 Rev. A, January 2004
