MBRA3045NTU ,Schottky Barrier RectifierFeatures Low forward voltage drop High frequency properties and switching speed Guard ring for o ..
MBRA3045NTU ,Schottky Barrier RectifierApplicationsTO-3P Switched mode power supply 1 2 3 Freewheeling diodes 1. Anode 2.Cath ..
MBRA340T3 ,3A 40V Schottky Rectifier in SMAepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low volt ..
MBRA340T3G ,Surface Mount Schottky Power Rectifierepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low volt ..
MBRB1035 ,SCHOTTKY RECTIFIERBulletin PD-2.317 rev. F 07/03MBR10.. SeriesMBRB10.. SeriesSCHOTTKY RECTIFIER10 AmpMajor Rati ..
MBRB1045 ,SCHOTTKY RECTIFIERapplications are in switching powerF(AV)supplies, converters, free-wheeling diodes, and reversebatt ..
MC146823FN ,V(dd): -0.3 to +8.0V; V(in): -0.5 to +0.5V; 10mA; CMOS parallel interfaceMOTOROLA" SEMICONDUCTOR -il-lllll-lllll-lllIll-TECHNICAL DATAMC146823Advance InformationCMOS Parall ..
MC146823FN ,V(dd): -0.3 to +8.0V; V(in): -0.5 to +0.5V; 10mA; CMOS parallel interfaceFeatures Include:o 24mdividually Programmed l O Prns. MOTEL Circuit for Bus Compatibility with Many ..
MC146823P ,High-Density High-Performance Silicon-Gate(PARALLEL INTERFACE)Features include:P SUFFIXPLASTIC PACKAGECASE 711O 24 Individually Programmed l/O PinsMOTEL Circuit ..
MC1469R ,Specifications and Applications InformationThermal CharacteristicsTA = +25OC PD 0.68 3.0 WattsDerate above TA = +25°C 1/0JA 5.44 24 mW/°CTherm ..
MC1472P1 ,DUAL PERIPHERAL-HIGH-VOLTAGE POSITIVE NAND DRIVERWuan-eDem.rw- Mot rmM w "tte Cqutmrmith lbw, puma)wuwu ovum clam mom" Me Iu-m-w Anus!-:m "N cum: MI ..
MC1488 ,QUAD MDTL LINE DRIVER EIA-232DMaximum ratings are those values beyond which device damage can occur.
MBRA3045NTU
Schottky Barrier Rectifier
MBRA3045N MBRA3045N Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection Applications TO-3P Switched mode power supply 1 2 3 Freewheeling diodes 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings T =25° ° ° °C unless otherwise noted C Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 45 V RRM V Maximum DC Reverse Voltage 45 V R I Average Rectified Forward Current @ T = 130°C30 A F(AV) C I Non-repetitive Peak Surge Current (per diode) 200 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature -65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case (per diode) 0.66 °C/W θJC Electrical Characteristics (per diode) Symbol Parameter Value Units V Maximum Instantaneous Forward Voltage V FM * I = 15A T = 25 °C 0.65 F C I = 15A T = 125 °C 0.57 F C I = 30A T = 25 °C 0.80 F C I = 30A T = 125 °C 0.65 F C I Maximum Instantaneous Reverse Current mA RM * @ rated V T = 25 °C 1 R C T = 125 °C 80 C * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2003 Rev. A, April 2003
