8M (1M x 8/512 K x 16) BIT The **MBM29LV800BE-90TN** is a flash memory device manufactured by **Fujitsu**. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Memory Type:** Flash
- **Memory Format:** NOR
- **Memory Size:** 8 Mbit (1M x 8-bit / 512K x 16-bit)
- **Supply Voltage:** 2.7V - 3.6V
- **Access Time:** 90 ns
- **Operating Temperature Range:** -40°C to +85°C
- **Package Type:** 48-pin TSOP (Thin Small Outline Package)
- **Interface:** Parallel
### **Descriptions:**
- **Organization:**
- **Byte Mode:** 1,048,576 words x 8 bits
- **Word Mode:** 524,288 words x 16 bits
- **Sector Architecture:**
- **Uniform Sector Size:** 64 KB (15 sectors) + 32 KB (1 sector) + 8 KB (2 sectors) + 16 KB (1 sector)
- **Endurance:**
- Minimum 100,000 write/erase cycles per sector
- **Data Retention:**
- 20 years minimum
### **Features:**
- **Low Power Consumption:**
- Active Read Current: 20 mA (typical)
- Standby Current: 1 µA (typical)
- **High-Speed Performance:**
- Fast Read Access Time: 90 ns
- Fast Erase and Programming:
- Sector Erase Time: 1 second (typical)
- Chip Erase Time: 10 seconds (typical)
- Byte/Word Programming Time: 20 µs (typical)
- **Reliability:**
- Built-in **ECC (Error Correction Code)** for enhanced data integrity
- **Compatibility:**
- **JEDEC Standard** compliant
- **CFI (Common Flash Interface)** support
- **Protection Features:**
- **Hardware Write Protection** for boot sectors
- **Software Data Protection** mechanism
This flash memory is designed for applications requiring **high-density, low-voltage, and high-speed** non-volatile storage, such as embedded systems, networking devices, and industrial applications.
(Note: All information is based on Fujitsu's official datasheet for the **MBM29LV800BE-90TN**.)
