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MBM29LV160BE70TN-GK FUJ N/a 192



MBM29LV160BE-90PBT ,16M (2M X 8/1M X 16) BITFUJITSU SEMICONDUCTORDS05-20883-2EDATA SHEETFLASH MEMORYCMOS16M (2M · 8/1M · 16) BIT-MBM29LV160TE/B ..
MBM29LV160BE-90TN ,16M (2M X 8/1M X 16) BITGENERAL DESCRIPTIONThe MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes ..
MBM29LV160T-12 ,FLASH MEMORY 16M (2M x 8/1M x 16) BITFEATURES• Single 3.0 V read, program and eraseMinimizes system level power requirements• Compatible ..
MBM29LV160T-90 ,FLASH MEMORY 16M (2M x 8/1M x 16) BITfeatures a sector erase architecture. The sector mode allows each sector to be erased and reprogram ..
MBM29LV160T-90PFTN ,16M (2M xⅴ 8/1M x 16) BITGENERAL DESCRIPTIONThe MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of ..
MC145151P2 ,Parallel-Input PLL Frequency Synthesizerfeatures consist ofa reference oscillator, selectable–reference divider, digital–phase detector, an ..
MC145152 ,Parallel-Input PLL Frequency Synthesizerfeatures consist ofa reference oscillator, selectable–reference divider, digital–phase detector, an ..
MC145152DW2 ,Parallel-Input PLL Frequency SynthesizerMaximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
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