MB8S ,Bridge RectifiersMB1S - MB8SMB1S - MB8S43
MB90050PF ,On-Screen Display ControllerFUJITSU SEMICONDUCTORDS04-28829-2EDATA SHEETASSP For Screen Display ControlCMOSOn-Screen Display Co ..
MB90075 ,ON-SCRREN DISPLAY CONTROLLER FOR NTSC/PALum ma
saw: no
M5900 m
ON-SCREEN DISPLAY CONTROLLER FDR NTSWPAL
Mu
nsscmvnou
rMbmgrWtS ..
MB90075PF ,ON-SCRREN DISPLAY CONTROLLER FOR NTSC/PALum ma
saw: no
M5900 m
ON-SCREEN DISPLAY CONTROLLER FDR NTSWPAL
Mu
nsscmvnou
rMbmgrWtS ..
MB90089 ,On-Screen Display ControllerFUJITSU SEMICONDUCTOR
DATA SHEET DSO4-28821-1 E
I DESCRIPTION
The MB90089 CMOS On-screen Dis ..
MB90089 ,On-Screen Display ControllerFUJITSU SEMICONDUCTOR
DATA SHEET DSO4-28821-1 E
I DESCRIPTION
The MB90089 CMOS On-screen Dis ..
MC12080 ,1.1 GHz PrescalerELECTRICAL CHARACTERISTICS (V = 4.5 to 5.5 V; T = –40 to 85°C, unless otherwise noted.)CC ACharacte ..
MC12080D ,1.1 GHz PrescalerOrder this document by MC12080/D* The MC12080 is a single modulus divide by 10, 20, 40, 80 prescal ..
MC12080DG , 1.1 GHz Prescaler
MC12083 ,MECL PLL COMPONENTS ? PRESCALER WITH STAND-BY MODE**SEMICONDUCTOR TECHNICAL DATA**# ** **!* **!**" *The MC12083 is a ÷2 prescaler for low power fre ..
MC12090L ,MECL PLL COMPONENTS HIGH-SPEED PRESCALERELECTRICAL CHARACTERISTICS0°C 25°C 75°CSymbol Characteristic Min Max Min Max Min Max UnitI Power Su ..
MC12090P ,MECL PLL COMPONENTS HIGH-SPEED PRESCALERLOGIC DIAGRAMTRUTH TABLE7 C1Q 29 C2 C D Qn + 1L X Qn11 D1H X QnQ 312 D2 L SUFFIXL L16–LEAD CERAMIC ..
MB8S
Bridge Rectifiers
MB1S - MB8S MB1S - MB8S 4 3 Features • Low leakage + + - + • Surge overload rating: 35 amperes peak. ~ ~ • Ideal for printed circuit board. SOIC-4 2 1 Polarity symbols molded • UL certified, UL #E111753. or marking on body Bridge Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 1S 2S 4S 6S 8S V Maximum Repetitive Reverse Voltage 100 200 400 600 800 V RRM V Maximum RMS Bridge Input Voltage 70 140 280 420 560 V RMS V DC Reverse Voltage (Rated V) 100 200 400 600 800 V R R I Average Rectified Forward Current, @ T = 50°C 0.5 A F(AV) A I Non-repetitive Peak Forward Surge Current FSM 35 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 1.4 W D R Thermal Resistance, Junction to Ambient,* per leg 85 C/W ° θJA R Thermal Resistance, Junction to Lead,* per leg 20 °C/W θJL *Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length. Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units V Forward Voltage, per bridge @ 0.5 A 1.0 V F I 5.0 Reverse Current, per leg @ rated V T = 25°C μA R R A 0.5 mA T = 125°C A 2 2 I t rating for fusing t < 8.3 ms 5.0 A s C Total Capacitance, per leg T 13 pF V = 4.0 V, f = 1.0 MHz R 2001 MB1S-MB8S, Rev. C
