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MAX9993ETP-T
High-Linearity 1700MHz to 2200MHz Down- Conversion Mixer with LO Buffer/Switch
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch19-2596; Rev 0; 10/02
General DescriptionThe MAX9993 high-linearity down-conversion mixer
provides 8.5dB of gain, +23.5dBm IIP3, and 9.5dB NF
for UMTS, DCS, and PCS base-station applications.
The MAX9993 integrates baluns in the RF and LO ports,
a dual-input LO selectable switch, an LO buffer, a dou-
ble-balanced mixer, and a differential IF output amplifi-
er. The MAX9993 requires a typical LO drive of +3dBm,
and supply current is guaranteed to below 230mA.
The MAX9993 is available in a compact 20-pin thin
QFN package (5mm ✕5mm) with an exposed pad.
Electrical performance is guaranteed over the extended
-40°C to +85°C temperature range.
The MAX9993 EV kit is available; contact the factory for
more information.
ApplicationsUMTS and 3G Base Stations
DCS1800 and EDGE Base Stations
PCS1900 Base Stations
Point-to-Point Microwave Systems
Wireless Local Loop
Private Mobile Radio
Military Systems
Features+23.5dBm Input IIP31700MHz to 2200MHz RF Frequency Range40MHz to 350MHz IF Frequency Range1400MHz to 2000MHz LO Frequency Range8.5dB Conversion Gain9.5dB Noise FigureIntegrated LO BufferSwitch-Selectable (SPDT), Two LO InputsLow 0 to +6dBm LO Drive40dB LO1-to-LO2 Isolation
Ordering Information*EP = Exposed pad.
Pin Configuration/Functional Diagram
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC..........................................................................-0.3V to 5.5V
RF (RF is DC shorted to GND through balun).....................50mA
LO1, LO2 to GND...............................................................±0.3V
TAP, IF+, IF- to GND..................................-0.3V to (VCC+ 0.3V)
LOSEL to GND................................-0.3V to (VCC (pin 8) + 0.3V)
LOBIAS, IFBIAS, LEXT to GND..................-0.3V to (VCC+ 0.3V)
RF and LO Input Power..................................................+22dBm
Continuous Power Dissipation (TA= +70°C)
20-Lead Thin QFN
(derate 30.3mW/°C above TA= +70°C)....................2200mW
θJA....................................................................................33°C/W
Operating Temperature Range...........................-40°C to +85°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
DC ELECTRICAL CHARACTERISTICS(Typical Operating Circuit as shown, no input RF or LO signals applied. VCC= 4.75V to 5.25V, TA= -40°C to +85°C. Typical values are
at VCC= 5.0V and TA= +25°C, unless otherwise noted.)
AC ELECTRICAL CHARACTERISTICS(Typical Operating Circuit, 4.75V < VCC< 5.75V, -40°C < TA< +85°, RF and LO ports are driven from 50Ωsources, 0dBm < PLO<
+6dBm, PRF= -5dBm, 1700MHz < fRF< 2200MHz, 1400MHz < fLO< 2000MHz, fIF= 200MHz. Typical values are for TA= +25°C
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
AC ELECTRICAL CHARACTERISTICS (continued)(Typical Operating Circuit, 4.75V < VCC< 5.75V, -40°C < TA< +85°, RF and LO ports are driven from 50Ωsources, 0dBm < PLO<
+6dBm, PRF= -5dBm, 1700MHz < fRF< 2200MHz, 1400MHz < fLO< 2000MHz, fIF= 200MHz. Typical values are for TA= +25°C
VCC= 5.0V, PLO= +3dBm, fRF= 1900MHz, fLO= 1700MHz, 200MHz IF.) (Notes 1, 2)
Note 2:All limits reflect losses of external components. Output measurements taken at IFOUT of the Typical Application Circuit.
Note 3:Production tested.
Note 4:Measured at IF port at IF frequency. fLO1and fLO2are offset by 1MHz, PLO1= PLO2= +3dBm.
Note 5:IF return loss can be optimized by external matching components.
Note 6:Operation outside this range is possible, but with degraded performance of some specifications.
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
Typical Operating Characteristics(MAX9993 EV Kit, VCC= 5.0V, PRF= -5dBm, PLO= +3dBm, LO is low-side injected for a 200MHz IF, TA= +25°C. For high-side LO
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/SwitchMAX9993 toc18
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTIONLO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993 toc17
LO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
MAX9993 toc16
INPUT P
1dB
(dBm)
INPUT P1dB vs. RF FREQUENCY
HIGH-SIDE INJECTIONRF FREQUENCY (MHz)
MAX9993 toc15
INPUT P
1dB
(dBm)
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTIONRF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993 toc14
INPUT P
1dB
(dBm)
RF FREQUENCY (MHz)
INPUT P1dB vs. RF REQUENCY
LOW-SIDE INJECTION
MAX9993 toc13
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
INPUT IP3 vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9993-12
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-11
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-10
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
Typical Operating Characteristics (continued)
(MAX9993 EV Kit, VCC= 5.0V, PRF= -5dBm, PLO= +3dBm, LO is low-side injected for a 200MHz IF, TA= +25°C. For high-side LO
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
RF-TO-IF ISOLATION vs. RF FREQUENCYMAX9993 toc27
RF-TO-IF ISOLATION (dB)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX9993 toc26
RF-TO-IF ISOLATION (dB)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. FREQUENCY
MAX9993 toc25
RF-TO-IF ISOLATION (dB)
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX9993 toc24
LO LEAKAGE (dBm)
LO FREQUENCY (MHz)
MAX9993 toc23
LO FREQUENCY (MHz)
LO LEAKAGE (dBm)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX9993 toc22
LO FREQUENCY (MHz)
LO LEAKAGE (dBm)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX9993 toc21
LO FREQUENCY (MHz)
LO LEAKAGE (dBm)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX9993 toc20
LO SWITCH ISOLATION vs. RF FREQUENCY
HIGH-SIDE INJECTIONLO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
MAX9993 toc19
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTIONLO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
Typical Operating Characteristics (continued)
(MAX9993 EV Kit, VCC= 5.0V, PRF= -5dBm, PLO= +3dBm, LO is low-side injected for a 200MHz IF, TA= +25°C. For high-side LO
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)
