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MAX8556ETEMAXN/a5avaiPLASTIC ENCAPSULATED DEVICES
MAX8556ETEMAXIMN/a243avaiPLASTIC ENCAPSULATED DEVICES


MAX8556ETE ,PLASTIC ENCAPSULATED DEVICESTable of Contents I. ........Device Description V. ........Quality Assurance Information II ..
MAX8556ETE ,PLASTIC ENCAPSULATED DEVICESApplicationsServers and Storage DevicesPIN-PART TEMP RANGE FEATURENetworkingPACKAGE16 Thin QFNBase ..
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MAX8556ETE+ ,4A Ultra-Low-Input-Voltage LDO RegulatorsELECTRICAL CHARACTERISTICS(V = V = 1.8V, V = 1.5V, I = 2mA, T = -40°C to +85°C, typical values are ..
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MAX8557ETE ,PLASTIC ENCAPSULATED DEVICESTable of Contents I. ........Device Description V. ........Quality Assurance Information II ..
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MAX8556ETE
PLASTIC ENCAPSULATED DEVICES
MAX8556ETE Rev. A RELIABILITY REPORT
FOR
MAX8556ETE

PLASTIC ENCAPSULATED DEVICES
July 19, 2004 MAXIM INTEGRATED PRODUCTS
120 SAN GABRIEL DR.
SUNNYVALE, CA 94086
Written by Reviewed by
Jim Pedicord Bryan J. Preeshl
Quality Assurance Quality Assurance
Manager, Reliability Operations Managing Director
Conclusion The MAX8556 successfully meets the quality and reliability standards required of all Maxim products. In addition,
Maxim’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim’s quality
and reliability standards.
Table of Contents
I. ........Device Description V. ........Quality Assurance Information
II. ........Manufacturing Information VI. .......Reliability Evaluation
III. .......Packaging Information IV. .......Die Information .....Attachments
I. Device Description
A. General
The MAX8556 low-dropout linear regulator operates from input voltages as low as 1.425V and is able to deliver up to
4A of continuous output current with a typical dropout voltage of only 100mV. The output voltage is adjustable from
0.5V to VIN - 0.2V.
Designed with an internal p-channel MOSFET pass transistor, the MAX8556 maintains a low 800µA typical supply
current, independent of the load current and dropout voltage. Using a p-channel MOSFET eliminates the need for an
additional external supply or a noisy internal charge pump. Other features include a logic-controlled shutdown mode,
built-in soft-start, short-circuit protection with foldback current limit, and thermal-overload protection. The MAX8556
features a POK output that transitions high when the regulator output is within ±10% of its nominal output voltage.
The MAX8556 is available in a 16-pin thin QFN 5mm x 5mm package with exposed paddle. B. Absolute Maximum Ratings Item Rating IN, EN, POK, POR to GND -0.3V to +4V
FB, OUT to GND -0.3V to (VIN + 0.3V)
Output Short-Circuit Duration Continuous
Operating Temperature Range -40°C to +85°C
Junction Temperature +150°C
Storage Temperature Range -65°C to +150°C
Lead Temperature (soldering, 10s) +300°C
Continuous Power Dissipation (TA = +70°C)
16-Pin Thin QFN (5mm x 5mm) 2666.7mW
Derates above +70°C (Note 1)
16-Pin Thin QFN (5mm x 5mm) 33.3mW/°C
Note 1: Maximum power dissipation is obtained using JEDEC JESD51-5 and JESD51-7 standards.
II. Manufacturing Information
A. Description/Function: 4A Ultra-Low-Input-Voltage LDO Regulators B. Process: S4 C. Number of Device Transistors: 3137
D. Fabrication Location: California, USA
E. Assembly Location: Thailand, Hong Kong or Thailand F. Date of Initial Production: April, 2004
III. Packaging Information
A. Package Type: 16-Pin QFN (5x5)
B. Lead Frame: Copper C. Lead Finish: Solder Plate D. Die Attach: Conductive Epoxy E. Bondwire: Gold (2.0 mil dia.) F. Mold Material: Epoxy with silica filler
G. Assembly Diagram: # 05-9000-0801
H. Flammability Rating: Class UL94-V0
I. Classification of Moisture Sensitivity
per JEDEC standard J-STD-020-A: Level 1
IV. Die Information
A. Dimensions: 110 x 90 mils B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Aluminum/Si (Si = 1%) D. Backside Metallization: None E. Minimum Metal Width: Metal1, Metal2 & Metal3 = 0.6 microns (as drawn) F. Minimum Metal Spacing: Metal1, Metal2 & Metal3 = 0.4 microns (as drawn) G. Bondpad Dimensions: 5 mil. Sq. H. Isolation Dielectric: SiO2
V. Quality Assurance Information
A. Quality Assurance Contacts: Jim Pedicord (Manager, Reliability Operations) Bryan Preeshl (Managing Director) B. Outgoing Inspection Level: 0.1% for all electrical parameters guaranteed by the Datasheet. 0.1% For all Visual Defects. C. Observed Outgoing Defect Rate: < 50 ppm D. Sampling Plan: Mil-Std-105D
VI. Reliability Evaluation

A. Accelerated Life Test
The results of the 135°C biased (static) life test are shown in Table 1. Using these results, the Failure
Rate (l) is calculated as follows:
l = 1 = 1.83 (Chi square value for MTTF upper limit)
MTTF 192 x 4389 x 77 x 2 Temperature Acceleration factor assuming an activation energy of 0.8eV l = 14.28 x 10-9 l = 14.28 F.I.T. (60% confidence level @ 25°C)
This low failure rate represents data collected from Maxim’s reliability monitor program. In addition to
routine production Burn-In, Maxim pulls a sample from every fabrication process three times per week and subjects
it to an extended Burn-In prior to shipment to ensure its reliability. The reliability control level for each lot to be
shipped as standard product is 59 F.I.T. at a 60% confidence level, which equates to 3 failures in an 80 piece
sample. Maxim performs failure analysis on any lot that exceeds this reliability control level. Attached Burn-In
Schematic (Spec. # 06-6240) shows the static Burn-In circuit. Maxim also performs quarterly 1000 hour life test
monitors. This data is published in the Product Reliability Report (RR-1N). B. Moisture Resistance Tests
Maxim pulls pressure pot samples from every assembly process three times per week. Each lot sample
must meet an LTPD = 20 or less before shipment as standard product. Additionally, the industry standard
85°C/85%RH testing is done per generic device/package family once a quarter.
C. E.S.D. and Latch-Up Testing The PN29 die type has been found to have all pins able to withstand a transient pulse of ±1500V, per Mil-
Std-883 Method 3015 (reference attached ESD Test Circuit). Latch-Up testing has shown that this device
withstands a current of ±250mA.
Table 1
Reliability Evaluation Test Results
MAX8556ETE

TEST ITEM TEST CONDITION FAILURE SAMPLE NUMBER OF IDENTIFICATION PACKAGE SIZE FAILURES

Static Life Test (Note 1)
Ta = 135°C DC Parameters 77 0 Biased & functionality Time = 192 hrs.
Moisture Testing (Note 2)
Pressure Pot Ta = 121°C DC Parameters QFN 77 0 P = 15 psi. & functionality RH= 100% Time = 168hrs. 85/85 Ta = 85°C DC Parameters 77 0 RH = 85% & functionality Biased Time = 1000hrs.
Mechanical Stress (Note 2)
Temperature -65°C/150°C DC Parameters 77 0 Cycle 1000 Cycles & functionality Method 1010
Note 1: Life Test Data may represent plastic DIP qualification lots.
Note 2: Generic Package/Process data
Attachment #1 TABLE II. Pin combination to be tested. 1/ 2/ 1/ Table II is restated in narrative form in 3.4 below. 2/ No connects are not to be tested. 3/ Repeat pin combination I for each named Power supply and for ground (e.g., where VPS1 is VDD, VCC, VSS, VBB, GND, +VS, -VS, VREF, etc). 3.4 Pin combinations to be tested. a. Each pin individually connected to terminal A with respect to the device ground pin(s) connected to terminal B. All pins except the one being tested and the ground pin(s) shall be open. b. Each pin individually connected to terminal A with respect to each different set of a combination of all named power supply pins (e.g., VSS1, or VSS2 or VSS3 or VCC1, or VCC2) connected to terminal B. All pins except the one being tested and the power supply pin or set of pins shall be open. c. Each input and each output individually connected to terminal A with respect to a combination of all the other input and output pins connected to terminal B. All pins except the input or output pin being tested and the combination of all the other input and output pins shall be open.
TERMINAL B
TERMINAL A
CURRENT
PROBE
(NOTE 6)
R = 1.5kW
C = 100pf
SHORT
R2
S2 R1
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