MAX5976BETE+T ,2.7V to 18V, 7A, Hot-Swap SolutionsApplicationsNote: All devices are specified over the -40°C to +85°C operating temperature range.RAI ..
MAX5977AETP+ ,1V to 16V, Single-Channel, Hot-Swap Controllers with Precision Current-Sensing OutputApplicationsturn-off and a lower slow-trip threshold for a delayed turn-off.ServersExceeding either ..
MAX5981AETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFETfeatures an LED driver that is auto-matically activated during sleep mode. During sleep PIN- SLEEP ..
MAX5981BETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFETELECTRICAL CHARACTERISTICS(V = (V - V ) = 48V, R = 24.9kω, R = 615ω, and R = 60.4kω. RTN, WAD, PG, ..
MAX5982AETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFETFeaturesS Sleep Mode and Ultra-Low-Power Sleep The MAX5982A/MAX5982B/MAX5982C provide a com-(MAX598 ..
MAX5982BETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFETApplicationsThe devices detect the presence of a wall adapter power IEEE 802.3af/at Powered Devices ..
MAZ8200G ,Silicon planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitForward voltag ..
MAZ8200G ,Silicon planar typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitRepetitive peak forward current I 20 ..
MAZ8200-H ,Silicon planar typeFeatures•Extremely low noise voltage caused from the diode (2.4V to 39V,1/3 to 1/10 of our conventi ..
MAZ8200-L ,Silicon planar typeelectrical characteristicsZ Zwithin part numbersReverse current I V ··············· Specified value ..
MAZ8200-M ,Silicon planar typeElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitForward voltage V ..
MAZ8220-H ,Silicon planar typeZener DiodesMAZ8000 SeriesSilicon planar typeUnit : mmFor stabilization of power supplyKA
MAX5976BETE+T
2.7V to 18V, 7A, Hot-Swap Solutions
MAX5976A/MAX5976B
2.7V to 18V, 7A, Hot-Swap Solution
General Description
The MAX5976A/MAX5976B are integrated solutions for
hot-swap applications requiring the safe insertion and
removal of circuit line cards from a live backplane. The
devices integrate a hot-swap controller, 24mI power
MOSFET, and electronic circuit-breaker protection in a
single package. The ICs are designed for protection of
2.7V to 18V supply voltages.
The devices provide inrush current control and short-
circuit detection during startup. During normal operation,
the devices provide circuit-breaker protection against
overload and short-circuit conditions. The circuit-breaker
function disconnects the power to the load if the load
current exceeds the circuit-breaker limit. The devices
are factory-calibrated to deliver accurate overcurrent
protection with Q10% accuracy. During a fault condi-
tion, the MAX5976A enters an autoretry mode while the
MAX5976B latches off. Both versions feature a resistor-
adjustable variable speed circuit-breaker threshold and
overtemperature protection. Additional features include
power-good and fault indicator outputs.
The ICs are available in a 16-pin, 5mm x 5mm, TQFN-
EP package and fully specified over the -40°C to +85°C
operating temperature range.
Applications
RAID Systems
Storage Bridge Bay
Disk Drive Power
Server I/O Cards
Industrial
Features2.7V to 18V Operating Voltage Range24mI Internal Power MOSFET7A Load Current CapabilityNo Sense Resistor Required±10% Circuit-Breaker Threshold AccuracyAdjustable Circuit-Breaker CurrentVariable Speed Circuit-Breaker ResponseThermal ProtectionPower-Good and Fault OutputsLatch-Off or Automatic Retry OptionsDrive-Present Signal InputActive-Low and Active-High Enables
19-5542; Rev 1; 4/11
Note: All devices are specified over the -40°C to +85°C
operating temperature range.
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
Ordering Information
Typical Application Circuit
EVALUATION KIT
AVAILABLEOUT
PRESDET
LOAD
(7A)
VPRESDET
ON1
REG
RCB
CREG
GND
2.7V TO 18V
2.7V TO 6V
CINTVS
MAX5976A
MAX5976B
FAULT
ON2RON2
RFAULT
RPG
VIN
REMOVABLE CARD
PARTPIN PACKAGEFAULT
MANAGEMENT
MAX5976AETE+16 TQFN-EP*Autoretry
MAX5976BETE+16 TQFN-EP*Latched Off
MAX5976A/MAX5976B
2.7V to 18V, 7A, Hot-Swap Solution
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
IN to GND ..............................................................-0.3V to +20V
CB to GND ..............................................-0.3V to (VREG + 0.3V)
ON1, REG to GND ..................................................-0.3V to +6V
OUT, ON2, PRESDET
to GND ...............-0.3V to the lower of (VIN + 0.3V) and +20V
PG, FAULT to GND ...............................................-0.3V to +26V
Continuous Power Dissipation (TA = +70NC)
TQFN (derate 33.3mW/NC above +70NC) (Note 1) ..2666.7mW
Operating Ambient Temperature Range ...........-40NC to +85NC
Maximum Junction Temperature .....................................+150NC
Storage Temperature Range ............................-60NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
ELECTRICAL CHARACTERISTICS
(VIN = 12V, VON1 = 2V, VON2 = VPRESDET = 0V, RCB = 40kI, TA = TJ = -40NC to +85NC, unless otherwise noted. Typical values are
at TA = +25NC.) (Note 3)
ABSOLUTE MAXIMUM RATINGS
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to /thermal-tutorial.
TQFN
Junction-to-Case Thermal Resistance (BJC) ...................30NC/W
Junction-to-Ambient Thermal Resistance (BJA) ..................2NC/W
PACKAGE THERMAL CHARACTERISTICS (Note 2)
Note 1: As per JEDEC51 standard (multilayer board).
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Input Supply Voltage RangeVIN2.718V
Input Supply CurrentIINVON1 = 3V, no load, 7A current-limit
threshold57.5mA
Default Undervoltage LockoutVUVLOVIN rising, VON1 = VIN2.352.52.65V
Default Undervoltage Lockout
HysteresisVUVLO_HYS0.1V
ON1 Turn-On ThresholdVON1_THVON1 rising1.171.211.25V
ON1 Turn-On Threshold
HysteresisVON1_HYSVON1 falling0.1V
ON1 Input Bias CurrentION1VON1 = 0 to 5V-1+1FA
CURRENT LIMIT
Circuit-Breaker Accuracy
(At Startup)ICB,TH
RCB = 40kI6.377.7RCB = 28.57kI4.555.5
RCB = 20kI3.153.53.85
RCB = 10kI1.5751.751.925
Slow-Comparator Response
Time (Note 4)tSCD0.6% overcurrent2.7ms
30% overcurrent200Fs
MOSFET
Total On-ResistanceRON152441mI
LOGIC INPUTS (ON2, PRESDET)
Low Voltage InputVIL2.7V < VIN < 18V0.4V
High Voltage InputVIH2.7V < VIN < 18V1.4V
MAX5976A/MAX5976B
2.7V to 18V, 7A, Hot-Swap Solution
ELECTRICAL CHARACTERISTICS (continued)
(VIN = 12V, VON1 = 2V, VON2 = VPRESDET = 0V, RCB = 40kI, TA = TJ = -40NC to +85NC, unless otherwise noted. Typical values are
at TA = +25NC.) (Note 3)
Note 3: All devices are 100% production tested at TA = +25°C. Limits over temperature are guaranteed by design.
Note 4: The current-limit slow-comparator response time is weighed against the amount of overcurrent so that the higher the over-
current condition, the faster the response time.
Typical Operating Characteristics
(VIN = 12V, VON1 = 2V, RCB = 40kω, VON2 = VPRESDET = 0V, TA = +25°C, unless otherwise noted.)
SUPPLY CURRENT vs. TEMPERATURE
MAX5976 toc01
TEMPERATURE (°C)
SUPPLY CURRENT (mA)3510-15
VON1 = 2V
VIN = 12V
VIN = 3VVIN = 5V
CIRCUIT-BREAKER THRESHOLD
vs. CIRCUIT-BREAKER RESISTANCE
MAX5976 toc02
RCB (kI)
CIRCUIT-BREAKER THRESHOLD (A)3025201540
VIN = 12V
CIRCUIT-BREAKER THRESHOLD
vs. TEMPERATURE
MAX5976 toc03
TEMPERATURE (°C)
CIRCUIT-BREAKER THRESHOLD (A)3510-15
VIN = 12V
RCB = 39.3kI
RCB = 30.1kI
RCB = 19.9kI
RCB = 10kI
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
OPEN-DRAIN OUTPUTS
FAULT, PG Output Low VoltageVOLLow-impedance state,
IFAULT = IPG = 5mA0.4V
FAULT, PG Output High
Leakage CurrentIOHHigh-impedance state,
VFAULT = VPG = 16V1FA
OUT Bias CurrentIOUTVON1 = GND10FA
TIMING
Automatic Restart Delay After
Current-Limit TimeouttOFF250ms
PG Assertion DelaytPGFrom VOUT > VPG16ms
PG ThresholdVPGVOUT = 12V0.9 x
VINV
THERMAL PROTECTION
Thermal-Shutdown Threshold150NC
Thermal-Shutdown Threshold
Hysteresis20NC
MAX5976A/MAX5976B
2.7V to 18V, 7A, Hot-Swap Solution
Typical Operating Characteristics (continued)
(VIN = 12V, VON1 = 2V, RCB = 40kω, VON2 = VPRESDET = 0V, TA = +25°C, unless otherwise noted.)
ON-RESISTANCE vs. TEMPERATURE
MAX5976 toc04
TEMPERATURE (°C)
ON-RESISTANCE (m3510-15
VIN = 12V
ILOAD = 100mA
TURN-ON WAVEFORM
MAX5976 toc05
VON1
2V/div
VOUT
10V/div
VPG
10V/div
ILOAD
5A/div0A
4ms/div
ILOAD = 5A
NORMAL TURN-OFF WAVEFORM
MAX5976 toc06
VON1
2V/div
VOUT
10V/div
VPG
10V/div
ILOAD
5A/div0A
4ms/div
ILOAD = 5A
FAULT SHUTDOWN WAVEFORM—OVERLOAD
(SLOW TRIP)
MAX5976 toc07
VOUT
10V/div
VFAULT
10V/div
VPG
10V/div
ILOAD
2A/div
2ms/div
FAULT SHUTDOWN WAVEFORM—SHORT
CIRCUIT
MAX5976 toc08
VOUT
10V/div
VFAULT
10V/div
VPG
10V/div
ILOAD
10A/div
4ms/div
ON1 RISING/FALLING THRESHOLD VOLTAGE
vs. TEMPERATURE
MAX5976 toc09
TEMPERATURE (°C)
ON1
RISING
FALLING THRESHOLD VOLTAGE 3510-15
VON1 RISING
VON1 FALLING
PG ASSERTION DELAY
MAX5976 toc10
VON1
1V/div
VOUT
5V/div
VPG
5V/div
4ms/div
AUTORETRY FUNCTIONALITY
MAX5976 toc11
VOUT
500mV/div
40ms/div
ILOAD
2A/div
VFAULT
10V/div
ILOAD = 7A
CIRCUIT-BREAKER THRESHOLD TIME
vs. OVERCURRENT
MAX5976 toc12
CIRCUIT-BREAKER THRESHOLD TIME (ms)
VIN = 12V
RCB = 19.9kI
MAX5976A/MAX5976B
2.7V to 18V, 7A, Hot-Swap Solution
Pin Description
Pin Configuration
PINNAMEFUNCTIONGNDGround
2–5IN
Supply Voltage Input. IN is connected to the drain of the internal 24mI MOSFET. Bypass IN with
1FF capacitor to ground. Add a transient voltage suppressor diode from IN to GND for output
short-circuit protection. FAULTFault Status Output. FAULT is an open-drain, active-low output. FAULT asserts low when an over-
current or overtemperature condition triggers a shutdown.PGPower-Good Output. PG is an open-drain, active-high output. PG pulls low until the internal power
MOSFET is fully enhanced.
8–11OUTLoad Connection Point. Source of the internal power MOSFET.PRESDETActive-Low Present-Detect Logic Input. Pulling PRESDET to GND enables the output if ON2 is low
and ON1 is high.ON2Active-Low Enable Logic Input. Pulling ON2 to GND enables the output if PRESDET is low and
ON1 is high.CBCurrent-Limit Threshold Set. Connect a resistor from CB to GND to set the circuit-breaker threshold. REGInternal Regulator Output. Bypass to ground with a 1FF capacitor. Do not power external circuitry
using the REG output.ON1
Active-High Enable Comparator Input. Pulling ON1 high enables the output if PRESDET and
ON2 are held low. ON1 also sets the undervoltage threshold. See the Setting the Undervoltage
Threshold section.Exposed Pad. EP is internally grounded. Connect externally to ground plane for effective heat dis-IN
GND
EP*
*CONNECT EP TO GND.
OUTOUTPRESDET2119
REG
ON1
OUT
FAULT
MA5976A
MA5976B
OUT
ON2
TQFN
TOP VIEW
MAX5976A/MAX5976B
2.7V to 18V, 7A, Hot-Swap Solution
Functional Diagram
PRESDET
TEMP SENSE
2500XFAULT
OUT
15µA
1mACB_COMP
SNS_OK
ON2
REGCBGND
1.21V
UVLO
VREG
ON1SET
CONTROL
LOGIC
CLRR
LDO
O.9 X VIN
REFERENCE
GENERATOR
MAX5976A
MAX5976B
CHARGE PUMP
6µA
10µA
1.25V
