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MAX5079EUDMAXIMN/a58avaiORing MOSFET Controller with Ultra-Fast 200ns Turn-Off
MAX5079EUD+ |MAX5079EUDMAXIMN/a125avaiORing MOSFET Controller with Ultra-Fast 200ns Turn-Off


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MAX5079EUD-MAX5079EUD+
ORing MOSFET Controller with Ultra-Fast 200ns Turn-Off
General Description
The MAX5079 ORing MOSFET controller replaces
ORing diodes in high-reliability redundant, parallel-con-
nected power supplies. Despite their low forward-volt-
age drop, ORing Schottky diodes cause excessive
power dissipation at high currents. The MAX5079
allows for the use of low-on-resistance n-channel power
MOSFETs to replace the Schottky diodes. This results
in low power dissipation, smaller size, and elimination
of heatsinks in high-power applications.
The MAX5079 operates from 2.75V to 13.2V and includes
a charge pump to drive the high-side n-channel MOSFET.
Operation down to 1V is possible if an auxiliary voltage of
at least 2.75V is available. When the controller detects a
positive voltage difference between IN and BUS, the
n-channel MOSFET is turned on. The MOSFET is turned
off as soon as the MAX5079 sees a negative potential at
IN with respect to the BUS voltage, and is automatically
turned back on when the positive potential is restored.
Under fault conditions, the ORing MOSFET’s gate is
pulled down with a 1A current, providing an ultra-fast
200ns turn-off. The reverse voltage turn-off threshold is
externally adjustable to avoid unintentional turn-off of the
ORing MOSFET due to glitches at IN or BUS caused by
hot plugging the power supply.
Additional features include an OVP flag to facilitate
shutdown of a failed power supply due to an overvolt-
age condition, and a PGOOD signal that indicates if VIN
is either below the undervoltage lockout or VBUSis in
an overvoltage condition. The MAX5079 operates over
the -40°C to +85°C temperature range and is available
in a space-saving 14-pin TSSOP package.
Applications

Paralleled DC-DC Converter Modules
N+1 Redundant Power Systems
Servers
Base-Station Line Cards
RAID
Networking Line Cards
Features
2.75V to 13.2V Input ORing Voltage1V to 13.2V Input ORing Voltage with 2.75V Aux
Voltage Present
2A MOSFET Gate Pulldown Current During Fault
Condition
Ultra-Fast 200ns, MOSFET Turn-Off During Fault
Condition
Supply Undervoltage and Bus Overvoltage
Detection
Power-Good (PGOOD) and Overvoltage (OVP)
Outputs for Fault Detection
Space-Saving 14-Pin TSSOP Package-40°C to +85°C Operating Temperature Range
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
Ordering Information
PARTTEMP RANGEPIN-PACKAGE

MAX5079EUD-40°C to +85°C14 TSSOP
19-3584; Rev 1; 3/09
BUS
COMMON
GATEBUSIN
POWER SUPPLY 1
(PS1)
POWER SUPPLY 2
(PS2)
1V TO 13.2VVOUT1
VOUT2
UVLOOVI
GND
STH
AUXIN>2.75V
FTH
PGOOD
VBUS
RSTH
RFTH
RFTH
CSTH
RSTHCSTH
CEXT
CEXT
CBUS
VINC-
OVP
GATEBUSIN
1V TO 13.2V
UVLOOVI
STH
AUXIN>2.75VPGOOD
VBUSN2
VINC-
OVP
MAX5079
MAX5079
GNDFTH
SUB 75N 03-04
SUB 75N 03-04
Typical Operating Circuit
Pin Configuration appears at end of data sheet.
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS

((VIN= 2.75V to 13.2V and VAUXIN= 0V) or (VIN= 1V and VAUXIN= 2.75V to 13.2V), RSTH= open, RFTH= 0, VUVLO= 1V, VOVI = 0V, = -40°C to +85°C, unless otherwise noted. Typical values are at VIN= 12V and TA= +25°C. See the Typical Operating Circuit.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
GATE to GND..............................................-0.3V to (VIN+ 8.5V)
All Other Pins to GND.............................................-0.3V to +15V
Continuous Current Into Any Pin......................................±50mA
Continuous Power Dissipation (TA= +70°C)
14-Pin TSSOP (derate 9.1mW/°C above +70°C)......727.3mW
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
POWER SUPPLIES

2.7513.20VIN Input Voltage RangeVINVAUXIN ≥ 2.75V1.013.2V
AUXIN Input Voltage RangeVAUXIN013.2V
(VAUXIN - VIN) High Threshold
(When GATE Connects Directly
to AUXIN) (Note 2)
VAUXIN_
THRESHOLDVAUXIN rising, IGATE = 10µA4.24.95.7V
(VAUXIN - VIN) Hysteresis (When
GATE Connects Directly To
AUXIN)
VAUXIN_
HYSTERESIS40mV
IN Supply CurrentIINVUVLO = 1V, VIN > VBUS4mA
AUXIN Leakage CurrentILEAK_AUXVAUXIN = 020µA
AUXIN Supply CurrentIAUXINVUVLO = 1V, VAUXIN = VIN, = 3V;
VIN > VBUS4mA
BUS Leakage CurrentILEAK_BUSVIN = 13.2V, VBUS = 01mA
BUS Supply CurrentIBUSVBUS = 13.2V, VBUS > VIN,
VBUS > VAUXIN3mA
IN TO AUXIN SWITCHOVER

Switchover High ThresholdVAUXIN_HIGH(VIN - VAUXIN), VAUXIN falling-60+25+200mV
Switchover Low ThresholdVAUXIN_LOW(VIN - VAUXIN), VAUXIN rising-200-25+50mV
IN UNDERVOLTAGE LOCKOUT

Internal UVLO High ThresholdVINTUVLO_HIGHVIN rising, VAUXIN = 0 or VAUXIN rising,
VIN = 1V, VBUS = 2.75V2.02.252.5V
Internal UVLO HysteresisVINTUVLO_HYSTVIN falling, VAUXIN = 0 or VAUXIN
falling, VIN = 1V30mV
External UVLO ThresholdVUVLOVUVLO falling0.5680.60.632V
External UVLO HysteresisVUVLO_HYST60mV
External UVLO Input BiasIUVLO500nA
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
ELECTRICAL CHARACTERISTICS (continued)

((VIN= 2.75V to 13.2V and VAUXIN= 0V) or (VIN= 1V and VAUXIN= 2.75V to 13.2V), RSTH= open, RFTH= 0, VUVLO= 1V, VOVI = 0V, = -40°C to +85°C, unless otherwise noted. Typical values are at VIN= 12V and TA= +25°C. See the Typical Operating Circuit.) (Note 1)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
ORing MOSFET CONTROL

ORing MOSFET Turn-On TimetONCGATE = 10nF, CEXT = 100nF,
MOSFET gate threshold = 2V1025µs
ORing MOSFET Forward Voltage
Threshold (Fast Comparator)VDTH(VIN - VBUS) rising, VAUXIN ≥ 2.75V512.520mV
RFTH = 0-12-24-31
RFTH = 12kΩ-63-104-150
ORing MOSFET Reverse Voltage
Turn-Off Threshold (Fast
Comparator (VIN - VBUS))
VFTH
RFTH = 27kΩ, VIN ≥
VAUXIN ≥
2.75V
ORing MOSFET Reverse Voltage
Blanking Time (Fast Comparator)tFBLVBUS = 2.8V, RFTH = 0,
VBUS - VIN = 0.3V50ns
Slow-Comparator Output Voltage
Threshold on STHVO_STHVIN ≥ 2.75V0.9511.05V
RSTH open-0.1-12-24.0
RSTH = 500kΩ-25
ORing MOSFET Reverse Voltage
Turn-Off Threshold (Slow
Comparator (VIN - VBUS))
VSTH
RSTH = 64kΩ-100
(VIN - VBUS) to ISTH
Transconductance (Slow
Comparator)
GM_STHVSTH = 0V0.17mS
STH floating0.50.91.5
CSTH = 0.047µF5
ORing MOSFET Reverse Voltage
Blanking Time (Slow
Comparator)
tSBL
CSTH = 0.22µF14
ORing MOSFET DRIVER

Gate-Charge CurrentIGATECEXT = 100nF, VIN ≥ 2.75V0.72mA
VGATE = VIN, VIN = 5.1V, VBUS = 5V;
VOUT = 1V0.926.8
VGATE ≥ VIN, VIN = 2.75V, VBUS = 3.5V1.3Gate Discharge Current (Note 3)IGATE.DIS_MIN
VGATE ≥ VIN, VIN = 12V, VBUS = 13.2V3.2
VBUS = 3.5V, CGATE = 0.1µF600Gate Fall TimetFGATEVBUS = 3.5V, CGATE = 0.01µF200ns
Gate Discharge Current Delay
Time (Time from VIN Falling from
3.7V to 3V to VGATE = VIN)
tDIS_GATEVBUS = 3.5V70200ns
Gate to IN ResistanceRGATE_IN(VGATE - VIN) = 100mV; VIN ≥ 2.75V900Ω
Gate to IN Clamp VoltageVGAT E _ IN _ C L AM P IGATE = 10mA, VIN ≥ VBUS8.511V
2.7V < VIN < 13.2V3.8
VIN = 13.2V6.577.7Gate-Drive Voltage (Measured
with Respect to VIN)(VGATE - VIN)
VIN = 2.75V4.555.5
VIN Switchover Threshold to
Higher GATE Voltage (Note 4)VIN_SOTH+7.488.5V
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
Note 1:
All devices are production tested at +25°C. Limits over temperature are guaranteed by design.
Note 2:
Threshold is reached when charge pump turns off.
Note 3:
Gate discharge current is guaranteed through the testing of gate fall time.
Note 4:
VINswitchover threshold is VINat which the gate-drive voltage (VGATE- VIN) goes from 5V to 7V, VINrising and (VIN≥VBUS).
ELECTRICAL CHARACTERISTICS (continued)

((VIN= 2.75V to 13.2V and VAUXIN= 0V) or (VIN= 1V and VAUXIN= 2.75V to 13.2V), RSTH= open, RFTH= 0, VUVLO= 1V, VOVI = 0V, = -40°C to +85°C, unless otherwise noted. Typical values are at VIN= 12V and TA= +25°C. See the Typical Operating Circuit.) (Note 1)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS

VIN Switchover Hysteresis
(Note 4)VIN_SOHYS40mV
External70Charge-Pump FrequencyfCPInternal, VIN < 5V, VAUXIN < 5V1100kHz
PROTECTION

OVI Input Bias CurrentIOVI500nA
OVI ThresholdVOVI_THOVI rising0.5680.60.632V
OVP Output Low VoltageVOVP_LOWVOVI = 1V, ISINK = 10mA0.20.4V
OVP Leakage CurrentIOVP_LEAKVIN = 2.75V, VOVP = 13.2V1µA
PGOOD Leakage CurrentIPG_LEAKVPGOOD = 13.2V1µA
PGOOD Output Low VoltageVPG_LOWISINK = 2mA0.20.4V
Typical Operating Characteristics

(TA = +25°C, unless otherwise noted. See the Typical Operating Circuit.)
AUXIN SUPPLY CURRENT
vs. TEMPERATURE (VIN = VBUS = 1V)

MAX5079 toc01
TEMPERATURE (°C)
IAUXIN
(mA)
VAUXIN = 5VVAUXIN = 10V
VAUXIN = 2.7V
GATE-CHARGE CURRENT vs. VIN

MAX5079 toc02
VIN (V)
IGATE
(mA)12810462
TA = +25°C
TA = -40°C
TA = +125°C
TA = +85°C
SLOW-COMPARATOR REVERSE VOLTAGE
THRESHOLD (VSTH vs. RSTH)

MAX5079 toc03
RSTH (kΩ)
STH
(V)
TA = -40°C, TA = +25°C,
TA = +85°C, TA = +125°C
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off

SLOW-COMPARATOR BLANKING TIME
tSTH vs. CSTH (RSTH = 180kΩ)
MAX5079 toc04
CSTH (μF)
tSTH
(ms)
75mV OVERDRIVE
FAST-COMPARATOR REVERSE VOLTAGE
THRESHOLD (VFTH vs. RFTH)

MAX5079 toc05
RFTH (kΩ)
FTH
(V)
TA = +125°C
TA = +85°C
TA = -40°C
FAST-COMPARATOR RESPONSE TIME

MAX5079 toc06
TEMPERATURE (°C)
RESPONSE
(ns)
VIN = 5V, VAUXIN = 0V
VIN = 1V, VAUXIN = 5V
VIN = 2.75V,
VAUXIN = 12V
VIN = 12V,
VAUXIN = 0V
CHARGE-PUMP FREQUENCY
vs. INPUT VOLTAGE

MAX5079 toc07
VIN (V)
fCP
(kHz)12101113978234561
TA = +125°C
TA = +85°C
TA = +25°CTA = -40°C
GATE-CHARGE CURRENT vs. CEXT

MAX5079 toc08
CEXT (nF)
GATE-CHARGE CURRENT (mA)
VIN = 12V
FAULT CURRENT WAVEFORM
(IN SHORTED TO PGND)
MAX5079 toc09
VIN = 5V, VBUS = 5V,
VAUXIN = 0V, CSTH = 0,
RSTH = OPEN, RFTH = 0,
UVLO = IN
BUS
5V/div
5V/div
GATE
10V/div
MOSFET REVERSE
CURRENT
5A/div
400ns/div
Typical Operating Characteristics (continued)

(TA = +25°C, unless otherwise noted. See the Typical Operating Circuit.)
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
Typical Operating Characteristics (continued)

(TA = +25°C, unless otherwise noted. See the Typical Operating Circuit.)
FAULT CURRENT WAVEFORM
(IN SHORTED TO PGND)

MAX5079 toc13
VIN = 5V, VBUS = 5V,
VAUXIN = 5V, CSTH = 0μF,
RSTH = OPEN, RFTH = 0,
UVLO = IN
BUS
5V/div
5V/div
GATE
10V/div
MOSFET REVERSE
CURRENT
10A/div
1μs/div
FAULT CURRENT WAVEFORM
(IN SHORTED TO PGND)

MAX5079 toc12
VIN = 1V, VBUS = 1V,
VAUXIN = 5V, CSTH = 0μF,
RSTH = OPEN, RFTH = 0,
UVLO = IN
BUS
1V/div
1V/div
GATE
5V/div
MOSFET REVERSE
CURRENT
10A/div
1μs/div
FAULT CURRENT WAVEFORM
(IN SHORTED TO PGND)

MAX5079 toc10
VIN = 2.75V, VBUS = 2.75V,
VAUXIN = 0V, CSTH = 0μF,
RSTH = OPEN, RFTH = 0,
UVLO = IN
BUS
2V/div
2V/div
GATE
5V/div
MOSFET REVERSE
CURRENT
10A/div
1μs/div
FAULT CURRENT WAVEFORM
(IN SHORTED TO PGND)

MAX5079 toc11
VIN = 12V, VBUS = 12V,
VAUXIN = 0V, CSTH = 0μF,
RSTH = OPEN, RFTH = 0,
UVLO = IN
BUS
10V/div
10V/div
GATE
20V/div
MOSFET REVERSE
CURRENT
10A/div
400ns/div
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
Typical Operating Characteristics (continued)

(TA = +25°C, unless otherwise noted. See the Typical Operating Circuit.)
FAULT CURRENT WAVEFORM
(IN SHORTED TO PGND)

MAX5079 toc14
VIN = 12V, VBUS = 12V,
VAUXIN = 5V, CSTH = 0,
RSTH = OPEN, RFTH = 0,
UVLO = IN
BUS
10V/div
10V/div
GATE
20V/div
MOSFET REVERSE
CURRENT
10A/div
1μs/div
POWER-UP WAVEFORM

MAX5079 toc15
VIN = 5.2V, VBUS = 4.9V,
IBUS = 5A
BUS
2V/div
CXN
10V/div
GATE
10V/div
2V/div
40μs/div
POWER-UP WAVEFORM

MAX5079 toc16
VIN = 12.2V, VBUS = 11.9V,
IBUS = 5A
BUS
5V/div
CXN
10V/div
GATE
10V/div
5V/div
20μs/div
POWER-UP WAVEFORM

MAX5079 toc17
VIN = 1.2V, VBUS = 1V,
VAUXIN = 5V, IBUS = 5A
BUS
500mV/div
CXN
10V/div
GATE
5V/div
1V/div
20μs/div
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
Pin Description
PINNAMEFUNCTION
CXNNegative Terminal of External Flying Charge-Pump CapacitorCXPPositive Terminal of External Flying Charge-Pump CapacitorOVPOpen-Drain Active-Low Output. OVP sinks up to 10mA when VOVI ≥ 0.6V and VIN ≥ VBUS. OVP can be
used to drive an optodiode. Cycle power or pull UVLO low and then high to reset OVP.PGOODOpen-Drain Active-Low Output. PGOOD pulls low when VUVLO ≤ 0.6V or VOVI ≥ 0.6V.STH
ORing MOSFET Slow-Comparator Reverse Voltage Threshold and Blanking Time Setting Input. Connect
a resistor from STH to GND to set the threshold. Connect a capacitor from STH to GND to set the
blanking time. Leave STH floating to set the internal threshold (-12mV) and internal blanking time
(0.9ms).FTHFast-Comparator Reverse Threshold Setting. Connect a resistor from FTH to GND to set the fast-
comparator reverse voltage threshold from -24mV to -400mV.OVIOvervoltage Comparator Input. Connect OVI to BUS through a resistive divider.UVLOUndervoltage Lockout Comparator Input. Connect UVLO to IN through a resistive divider. The MAX5079
remains off until VUVLO rises above 0.66V. When VUVLO rises above 0.664V, VGATE is raised to VIN.PGNDPower Ground. Ground discharge path of the 2A GATE pulldown. Connect to external power ground
plane.GATEGate-Driver Output for n-Channel ORing MOSFETBUSBus Voltage-Sense Input. Connect BUS to the drain of the ORing MOSFET to sense the polarity of the
Bus Current. The MAX5079 receives its power from BUS when VIN and VAUXIN are not present.GNDSignal Ground. Connect to the low-level signal or analog ground.INSource Connection for ORing MOSFET and Supply Input for the MAX5079. Connect IN directly to the
power-supply voltage of 2.75V to 13.2V or 1V to 13.2V with VAUXIN ≥ 2.75V.AUXINAuxiliary Power-Supply Input. AUXIN supplies power to the IC when 1V ≤ VIN ≤ 2.75V. Connect AUXIN to
2.75V or higher if VIN is less than 2.75V.
MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off

AUXIN TO GATE
DIRECT CONNECTION
IN/AUXIN/BUS
SWITCHOVER
IN/AUXIN CHARGE-PUMP
SWITCHOVER
IN/AUXIN SUPPLY
SWITCHOVER
CHARGE
PUMP
0.6V
REFERENCE
AUXIN
BUS
VSUPPLY
UVLO
OVI
PGOOD
LOGIC
LOGIC
INTERNAL
UVLO
OVPPGOOD
0.9ms
DELAY
TOP LOGIC
VSUPPLY
CPOFF
UVLOOVI
PGND
CXPCXNGATE
PULLDOWN
REG
DRIVER
PULLDOWN
PGOOD
GND
GATE TARGET SELECTOR
COMPARATORVSUPPLY
VSUPPLY
VSUPPLYVSUPPLY
STH
20μA
HYSTERESIS
CONTROL
FTH
BUS
MAX5079
Figure 1. Block Diagram
Block Diagram
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