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MAX3355EEUD+ |MAX3355EEUDMAXN/a32avai±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP
MAX3355EEUD+TMAXIMN/a8733avai±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP


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MAX3355EEUD+-MAX3355EEUD+T
±15kV ESD-Protected USB On-the-Go Charge Pump and Comparators in UCSP
General Description
The MAX3355E integrates a charge pump and com-
parators to enable a system with an integrated USB on-
the-go (OTG) dual-role transceiver to function as a USB
OTG dual-role device. USB OTG facilitates the direct
connection of peripherals and mobile devices such as
PDAs, cellular phones, MP3 players, and digital cam-
eras to one another without a host PC.
The MAX3355E’s internal charge pump supplies VBUS
power and signaling that is required by the transceiver as
defined in On-the-Go Supplement to the USB 2.0
Specification, Revision 1.0. The MAX3355E features ID
detection and internal comparators for monitoring
VBUS. The VBUSstatus outputs are used during negoti-
ation for the USB according to the session request pro-
tocol (SRP) and host negotiation protocol (HNP).
The MAX3355E operates with logic supply voltages
(VL) as low as 1.65V, ensuring compatibility with low-
voltage ASICs. The device also features a logic-selec-
table 1µA shutdown mode.
The MAX3355E has built-in ±15kV ESD-protection cir-
cuitry to protect the VBUSand ID_IN pins. The device is
available in a miniature 4 x 3 chip-scale package
(UCSP), as well as a 14-pin TSSOP package, and is
specified for operation over the -40°C to +85°C extended
temperature range.
Applications

Cell PhonesMP3 Players
PDAsDigital Cameras
Features
Guaranteed 8mA (min) VBUSCharge-Pump Output±15kV ESD Protection on VBUSand ID_INUp to +6.0V Backdrive Capability for VBUS+2.6V to +5.5V Operating Voltage RangeVLOperates Down to +1.65VGuaranteed VBUSInput Impedance When Not
Driven
Automatic CLOADDetectionComparators for Host Negotiation ProtocolID_IN DetectionAvailable in 4 x 3 UCSP or 14-Pin TSSOP Package
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
PARTTEMP RANGEPIN-
PACKAGE
TOP
MARK

MAX3355EEBC-T-40°C to +85°C4 x 3 UCSPABE
MAX3355EEUD-40°C to +85°C14 TSSOP—
Ordering Information

CHARGE
PUMP
5V AT 8mA40kΩ TO
100kΩ
STATUS2
STATUS1
ON/OFF
MAX3355E
VBUS
COMPARATORS
CURRENT
SOURCE
VBUSVBUS
GND
USB CONNECTOR
ID_IN
GND
VCCVCCC-
ESD
LEVEL
SHIFTER
OFFVBUS
SHDN
STATUS1
STATUS2
ID_OUT
DUAL-ROLE
ASIC
LOGIC SUPPLY
+1.65V TO VCC
USB
XCVR
ESD
Functional Diagram

19-2844; Rev 1; 8/03
Pin Configurations appear at end of data sheet.
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS

(VCC= +2.6V to +5.5V, VL= +1.65V to VCC, C1 = 0.1µF, VCCdecoupled with 1µF capacitor to GND, VLdecoupled with 0.1µF
capacitor to GND, CLOAD= 1µF (min), ESRLOAD= 1Ω(max), TA= TMINto TMAX. Typical values are at VCC= +3.0V, VL= 1.8V, TA=
+25°C, unless otherwise noted.) (Notes 1, 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND)
VCC, VL, VBUS, ID_IN.............................................-0.3V to +6.0V
C+..................................................................(VCC- 0.3V) to +6V
C-................................................................-0.3V to (VCC+ 0.3V)
OFFVBUS, SHDN, STATUS1,
STATUS2, ID_OUT....................................-0.3V to (VL+ 0.3V)
VBUSShort Circuit to GND.........................................Continuous
Output Current (all other pins)..........................................±15mA
Continuous Power Dissipation (TA= +70°C)
4 x 3 UCSP (derate 6.5mW/°C above +70°C).............520mW
14-Pin TSSOP (derate 9.1mW/°C above +70°C).........727mW
Operating Temperature Range...........................-40°C to +85°C
Storage Temperature Range.............................-65°C to +150°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s).................................+300°C
Bump Temperature (soldering)
Infrared (15s)...............................................................+200°C
Vapor Phase (20s).......................................................+215°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS

Supply VoltageVCC2.65.5V
Logic Supply VoltageVL1.65VCCV
Logic Supply CurrentIL100µA
No activity on VBUS; comparator and
reference active200µA
Operating Supply CurrentICC
Device A configured, OFFVBUS = VL,
ILOAD = 8mA, charge pump on20mA
Device B configured, SHDN = GND1Shutdown Supply CurrentICCSHDNDevice A configured, SHDN = GND30µA
Thermal-Shutdown Protection
Threshold
Device A configured, OFFVBUS = VL,
charge pump on+150°C
Thermal-Shutdown Protection
Hysteresis
Device A configured, OFFVBUS = VL,
charge pump on+20°C
LOGIC INPUTS AND OUTPUTS

VOHISOURCE = +1mA2/3 x VLSTATUS1, STATUS2, ID_OUT
Output VoltageVOLISINK = -1mA0.4V
VIH2/3 x VLOFFVBUS, SHDN Input VoltageVIL0.4V
Input Leakage CurrentILKGOFFVBUS, SHDN = GND or VL±1µA
VBUS OUTPUT VOLTAGE: DEVICE A CONFIGURED

ILOAD = 0 to 8mA, CLOAD = 1µF,
OFFVBUS = VL, ID_IN = GND4.635.25
VBUS Output Voltage
No load, CLOAD = 1µF, OFFVBUS = VL,
ID_IN = GND4.8
VBUS Leakage VoltageOFFVBUS = GND200mV
VBUS Sink CurrentOFFVBUS = GND, VBUS = +6.0V150µA
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
ELECTRICAL CHARACTERISTICS (continued)

(VCC= +2.6V to +5.5V, VL= +1.65V to VCC, C1 = 0.1µF, VCCdecoupled with 1µF capacitor to GND, VLdecoupled with 0.1µF
capacitor to GND, CLOAD= 1µF (min), ESRLOAD= 1Ω(max), TA= TMINto TMAX. Typical values are at VCC= +3.0V, VL= 1.8V, TA=
+25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS

VBUS Source CurrentOFFVBUS = VL, ID_IN = GND8mA
VBUS Short-Circuit Current LimitVBUS shorted to GND200mA
VBUS Output RippleILOAD = 8mA, CLOAD = 1µF,
OFFVBUS = VL, ID_IN = GND (Note 3)100mV
Charge-Pump Switching
Frequency500kHz
VBUS Input ImpedanceRINVBUSOFFVBUS = GND or SHDN = GND40100kΩ
LOAD DETECTION VBUS OUTPUT VOLTAGE

CLOAD = 20µF, OFFVBUS = VL, ID_IN =
VCC, IBUS source on-time = tVBUSCHRG2.1
VBUS Output Voltage
CLOAD = 95µF, OFFVBUS = VL, ID_IN =
VCC, IBUS source on-time = tVBUSCHRG1.9
VBUS Source CurrentOFFVBUS = VL, ID_IN = VCC (Note 4)450600850µA
VBUS Current Gate TimetVBUSCHRGOFFVBUS = VL, ID_IN = VCC, Device B
(Note 4)
(max)10556
(min)ms
VBUS COMPARATOR

VBUS Valid Comparator ThresholdVTHVBUSVLDVBUS rising4.44.554.63V
VBUS Valid Comparator Hysteresis20mV
Session Valid Comparator
ThresholdVTHSESVLD1.121.41.68V
Session Valid Comparator
Hysteresis15mV
B-Session End Comparator
ThresholdVTHSESEND0.40.50.6V
B-Session End Comparator
Hysteresis30mV
Shutdown ComparatorVTH,SHDN0.82.4V
ID_IN

ID_IN Voltage Input for Device B2/3 x VccV
ID_IN Voltage Input for Device A0.4V
ID_IN Input Impedance150200250kΩ
ESD PROTECTION (ID_IN, VBUS)

Human Body Model±15kV
IFC 1000-4-2 Air-Gap Discharge±15kV
IFC 1000-4-2 Contact Discharge±8kV
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSP
Typical Operating Characteristics

(VCC, VL= +3.3V, C1 = 0.1µF, VCCdecoupled with 1µF capacitor to GND, VLdecoupled with 0.1µF capacitor to GND, CLOAD= 1µF
min, ESRLOAD= 1Ωmax, TA= +25°C, unless otherwise noted.)
VCC INPUT CURRENT
vs. VBUS OUTPUT CURRENT
MAX3355E toc01
VBUS OUTPUT CURRENT (mA)
CC
INPUT CURRENT (mA)103040
VCC = 2.6V
VCC = 4.0V
VCC = 5.5V
VBUS OUTPUT VOLTAGE
vs. VBUS OUTPUT CURRENT
MAX3355E toc02
VBUS OUTPUT CURRENT (mA)
BUS
OUTPUT VOLTAGE (V)103040
VCC = 4.0V
VCC = 5.5V
VCC = 2.6V
VBUS OUTPUT RIPPLE VOLTAGE
vs. VCC INPUT VOLTAGE
MAX3355E toc03
VCC INPUT VOLTAGE (V)
BUS
OUTPUT RIPPLE VOLTAGE (mV)
IVBUS = 8mA
TIMING CHARACTERISTICS

(VCC= +2.6V to +5.5V, VL= +1.65V to VCC, C1 = 0.1µF, VCCdecoupled with 1µF capacitor to GND, VLdecoupled with 0.1µF
capacitor to GND, CLOAD= 1µF (min), ESRLOAD= 1Ω(max), TA= TMINto TMAX. Typical values are at VCC= +3.0V, VL= 1.8V, TA=
+25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS

VBUS Rise Time0 to 4.4V, CLOAD = 1µF, ILOAD = 8mA100ms
OFFVBUS Propagation Delay6µs
Comparator Propagation Delay3µs
Time to Exit Shutdown50µs
Time to Shutdown1µs
ID_OUT Rise TimeCID_OUT = 50pF10ns
ID_OUT Fall TimeCID_OUT = 50pF10ns
Note 1:
Limits are 100% production tested at +25°C. Limits over temperature are guaranteed by design.
Note 2:
All currents out of the device are positive; all currents into the device are negative. All voltages are referenced to device
ground unless otherwise specified.
Note 3:
The ripple voltage is strongly correlated to the bus capacitance and its ESR.
Note 4:
The VBUScurrent source and current gate time vary together with process and temperature such that the resulting VBUS
pulse is guaranteed to drive a <13µF load to a voltage >2.0V, and to drive a >96µF load to a voltage <2.2V.
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSPypical Operating Characteristics (continued)

(VCC, VL= +3.3V, C1 = 0.1µF, VCCdecoupled with 1µF capacitor to GND, VLdecoupled with 0.1µF capacitor to GND, CLOAD= 1µF
min, ESRLOAD= 1Ωmax, TA= +25°C, unless otherwise noted.)
VBUS OUTPUT VOLTAGE
vs. VCC INPUT VOLTAGE
MAX3355E toc04
VCC INPUT VOLTAGE (V)
BUS
OUTPUT VOLTAGE (V)
IVBUS = 0mA
IVBUS = 8mA
VBUS INPUT IMPEDANCE
vs. TEMPERATURE
MAX3355E toc05
TEMPERATURE (°C)
BUS
INPUT IMPEDANCE (k-153560
SUPPLY CURRENT
vs. TEMPERATURE
MAX3355E toc06
TEMPERATURE (°C)
SUPPLY CURRENT (mA)-153560
IVBUS = 8mA
VCC = 4.0V
VCC = 2.6V
VCC = 5.5V
VBUS vs. CAPACITANCE LOAD
DURING LOAD DETECTION

MAX3355E toc07
CVBUS = 10μF
1V/div
CVBUS = 96μF
1V/div
40ms/div
MAX3355E
±15kV ESD-Protected USB On-the-Go
Charge Pump and Comparators in UCSPypical Application Circuit

OFFVBUS
VCCVCC
ID_OUT
STATUS1
STATUS2
SHDNGND
OTG SIE
ID_IN
VBUS
0.1μF
CLOAD
1μF
1μF
0.1μF
USB OTG
CONNECTOR
MAX3355E
Pin Description
PIN
UCSPTSSOPNAMEFUNCTION
2VCCPower Supply. +2.6V to +5.5V input supply. Bypass VCC to GND with a 1µF capacitor.3ID_OUTDevice ID Output. Output of ID_IN level translated to VL.5STATUS1Status Output 1. Provides output voltage detection for use during HNP handshaking (Tables 1
and 2).6STATUS2Status Output 2. Provides output voltage detection for use during HNP handshaking (Tables 1
and 2).1VBUSS B S up p l y. V B U S p r ovi d es a nom i nal + 5.0V outp ut w hen ID _IN i s l ow and O FFVBUS i s hi g h.B U S i s l ow er than + 2.1V w hen ID _IN i s op en or a l oad g r eater than 96.5µF i s sensed . V B U S cane b ackd r i ven to + 6.0V w i thout any conseq uence. Byp ass V B U S to G N D w i th a 1µF cap aci tor .4OFFVBUSVBUS Off. Turns the internal charge pump providing VBUS on and off.11SHDNShutdown. Connect SHDN to GND to enter shutdown and reduce supply current to less than
1µA. Connect SHDN to VL for normal operation.9VLLogic Supply. VL sets the logic output high voltage and logic input high threshold. VL must be
between +1.65V and VCC.14C+Charge-Pump Positive Connection13C-Charge-Pump Negative Connection12GNDGround10ID_INDevice ID. ID_IN is internally pulled up to VCC. Leave ID_IN open for device B and connect
ID_IN to GND for device A.7, 8N.C.No Connection
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