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MAX2643EXT-T |MAX2643EXTTMAXIMN/a1127avai900MHz SiGe / High IP3 / Low-Noise Amplifiers
MAX2643EXT-T |MAX2643EXTTMAXIM,MAXIMN/a25000avai900MHz SiGe / High IP3 / Low-Noise Amplifiers


MAX2643EXT-T ,900MHz SiGe / High IP3 / Low-Noise Amplifiersfeatures a 13dB attenuation step, which On-Chip Output Matchingextends the LNA’s dynamic range. Bo ..
MAX2643EXT-T ,900MHz SiGe / High IP3 / Low-Noise AmplifiersApplications800MHz/900MHz Cellular PhonesPIN-TOPPART TEMP. RANGEPACKAGE MARK900MHz Cordless PhonesM ..
MAX2644EXT ,2.4GHz SiGe, High IP3 Low-Noise AmplifierELECTRICAL CHARACTERISTICS(V = +2.7V to +5.5V, R = 1.2kΩ, no RF signal applied, R and R are AC-coup ..
MAX2644EXT+T ,2.4GHz SiGe, High IP3 Low-Noise Amplifierapplications. The LNA provides up to +1dBm inputIP3 while maintaining a low noise figure of 2.0dB a ..
MAX2644EXT-T ,2.4GHz SiGe / High IP3 Low-Noise AmplifierApplications Ordering InformationBluetooth PIN- TOPPART TEMP RANGEPACKAGE MARK802.11 WLANMAX2644EXT ..
MAX2645EUB+T ,3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA PredriverApplicationsWireless Local LoopPin Configuration appears at end of data sheet.Wireless Broadband Ac ..
MAX6001EUR-T ,Low-Cost / Low-Power / Low-Dropout / SOT23-3 Voltage ReferencesApplicationsOrdering InformationPortable/Battery-Powered EquipmentNotebook ComputersPIN- SOTPART TE ..
MAX6002EUR+ ,Low-Cost, Low-Power, Low-Dropout, SOT23-3 Voltage ReferencesApplicationsOrdering InformationPortable/Battery-Powered EquipmentNotebook ComputersPIN- SOTPART TE ..
MAX6002EUR+T ,Low-Cost, Low-Power, Low-Dropout, SOT23-3 Voltage ReferencesELECTRICAL CHARACTERISTICS—MAX6001(V = +5V, I = 0, T = T to T , unless otherwise noted. Typical val ..
MAX6002EUR+T ,Low-Cost, Low-Power, Low-Dropout, SOT23-3 Voltage ReferencesApplicationsOrdering InformationPortable/Battery-Powered EquipmentNotebook ComputersPIN- SOTPART TE ..
MAX6002EUR-T ,Low-Cost / Low-Power / Low-Dropout / SOT23-3 Voltage ReferencesELECTRICAL CHARACTERISTICS—MAX6001(V = +5V, I = 0, T = T to T , unless otherwise noted. Typical val ..
MAX6003EUR ,Low-Cost, Low-Power, Low-Dropout, SOT23-3 Voltage ReferencesFeaturesThe MAX6001–MAX6005 family of SOT23, low-cost♦ 1% max Initial Accuracyseries voltage refere ..


MAX2643EXT-T
900MHz SiGe / High IP3 / Low-Noise Amplifiers
General Description
The MAX2642/MAX2643 low-cost, high third-order inter-
cept point (IP3), low-noise amplifiers (LNAs) are
designed for applications in cellular, ISM, SMR, and
PMR systems. They feature a programmable bias,
allowing the IP3 and supply current to be optimized for
specific applications. These LNAs provide up to 0dBm
input IP3 while maintaining a low noise figure of 1.3dB.
The gain for these devices is typically 17dB. The
MAX2642 also features a 13dB attenuation step, which
extends the LNA’s dynamic range. Both devices feature
a shutdown mode that minimizes power consumption.
On-chip output matching saves board space by reduc-
ing the number of external components.
The MAX2642/MAX2643 are designed on a low-noise,
advanced silicon-germanium (SiGe) process technolo-
gy. They operate from a +2.7V to +5.5V single supply
and are available in the ultra-small 6-pin SC70 package.
________________________Applications

800MHz/900MHz Cellular Phones
900MHz Cordless Phones
868MHz/900MHz ISM-Band Wireless Data
PMR/SMR/LMR
Features
Wide Frequency Range: 800MHz to 1000MHzHigh Output IP3 and Adjustable
+17dBm at 5.3mA
+7dBm at 2.8mA
Low Noise Figure: 1.3dB at 900MHz13dB Attenuation Step (MAX2642)On-Chip Output MatchingLow-Power Shutdown Mode+2.7V to +5.5V Single-Supply OperationUltra-Small SC70-6 Package
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers
Pin Configuration

19-1682; Rev 0; 4/00
Ordering Information
Typical Operating Circuit
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS—MAX2642

(VCC= +2.7V to +5.5V, TA= -40°C to +85°C, no RF signal applied, RFIN and RFOUT are AC-coupled and terminated to 50Ω, high-
DC ELECTRICAL CHARACTERISTICS—MAX2643

(VCC= +2.7V to +5.5V, TA= -40°C to +85°C, no RF signal applied, RFIN and RFOUT are AC-coupled and terminated to 50Ω. Typical
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND..............................................................-0.3V to +6V
RFOUT to GND...........................................-0.3V to (VCC+ 0.3V)
RFIN to GND..................................................................0 to 0.9V
RFIN Power (50Ωsource)................................................+5dBm
BIAS to GND................................................................0 to +0.3V
Operating Temperature Range...........................-40°C to +85°C
Maximum Junction Temperature.....................................+150°C
Continuous Power Dissipation (TA= +70°C)
SC70-6 (derate 3.1mW/°C above +70°C)...................245mW
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers
AC ELECTRICAL CHARACTERISTICS

(MAX2642/MAX2643 EV kits, PRFIN= -30dBm, fRFIN= 900MHz, input and output are terminated to 50Ω, VCC= +3.0V, TA= +25°C,
Note 1:
Devices are production tested at TA= +25°C. Minimum and maximum values are guaranteed by design and characterization
over temperature and supply voltage.
Note 2:
High-gain mode is set for the MAX2642 by connecting RFOUT to GND through a 33kΩresistor.
Note 3:
Low-gain mode is applicable only to the MAX2642 and is set by connecting RFOUT to VCCthrough a 33kΩresistor.
Note 4:
Maximum DC voltage through a 33kΩresistor that sets the MAX2642 to operate in high-gain mode.
Note 5:
Minimum DC voltage through a 33kΩresistor that sets the MAX2642 to operate in low-gain mode.
Note 6:
DC current required when RFOUT is connected to GND through a 33kΩresistor (MAX2642) and 10kΩresistor (MAX2643).
Note 7:
DC current required when RFOUT is connected to VCCthrough a 33kΩresistor (MAX2642) and 10kΩresistor (MAX2643).
Note 8:
Normal operation is set for the MAX2643 by connecting RFOUT to VCCthrough a 10kΩresistor.
Note 9:
Shutdown is set for the MAX2643 by connecting RFOUT to GND through a 10kΩresistor.
Note 10:
Minimum DC voltage through a 10kΩresistor that sets the MAX2643 to operate in normal mode.
Note 11:
Maximum DC voltage through a 10kΩresistor that sets the MAX2643 to operate in shutdown mode.
Note 12:
Min/Max limits are guaranteed by design and characterization, except gain is production tested at TA= +25°C.
Note 13:
The part has been characterized at the specified frequency range. Operation outside this range is possible but not guar-
anteed.
Note 14:
Devices are production tested at TA= +25°C.
Note 15:
Measured with two input tones, f1= 895MHz and f2= 905MHz, both at -30dBm per tone.
Note 16:
Excludes PC board losses (0.25dB typical at the input of the MAX2642/MAX2643 EV kit).
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers
Typical Operating Characteristics

(MAX2642/MAX2643 EV kits, VCC= +3.0V, PRFIN= -30dBm, input and output are terminated to 50Ω, fRFIN= 900MHz, RBIAS=
510Ω, high-gain mode (low-gain mode is applicable only to the MAX2642), TA= +25°C, unless otherwise noted.)
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers

MAX2642
ATTENUATION STEP vs. FREQUENCY
MAX2642/43-10
FREQUENCY (MHz)
ATTENUATION STEP (dB)
RETURN LOSS vs. FREQUENCY
(HIGH GAIN)
MAX2642/43-11
FREQUENCY (MHz)
ATTENUATION STEP (dB)
MAX2642
RETURN LOSS vs. FREQUENCY
(LOW GAIN)
MAX2642/43-12
FREQUENCY (MHz)
RETURN LOSS (dB)
REVERSE ISOLATION vs. FREQUENCY
MAX2642/43-13
FREQUENCY (MHz)
RETURN LOSS (dB)
MAX2642
HIGH/LOW-GAIN SWITCH
CHARACTERISTICS
MAX2642/43-14
TIME (400ns/div)
OUTPUT POWER (dBm)
MAX2643
SHUTDOWN CHARACTERISTICS
MAX2642/43-15
TIME (4µs/div)
OUTPUT POWER (dBm)4006002008001000120014001600
SUPPLY CURRENT vs. RBIAS

MAX2642/43-16
RBIAS (Ω)
SUPPLY CURRENT (mA)
SHUTDOWN CURRENT
vs. TEMPERATURE
MAX2642/43-17
TEMPERATURE (°C)
SHUTDOWN CURRENT (
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX2642/43-18
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (mA)
Typical Operating Characteristics (continued)

(MAX2642/MAX2643 EV kits, VCC= +3.0V, PRFIN= -30dBm, input and output are terminated to 50Ω, fRFIN= 900MHz, RBIAS=
510Ω, high-gain mode (low-gain mode is applicable only to the MAX2642), TA= +25°C, unless otherwise noted.)
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers
Applications Information
Input Matching

Input matching is required for optimum performance.
The MAX2642/MAX2643 require a simple LC matching
network, as shown in the Typical Operating Circuit. To
further reduce cost and external component count,
replace the external inductor with a microstrip transmis-
sion line. The Typical Operating Circuitshows the rec-
ommended input-matching networks for the MAX2642/
MAX2643 at 900MHz. These values are optimized for
best simultaneous gain, noise figure, and return-loss
performance. To aid in the design of the matching net-
work for other frequencies, Tables 1–6 list typical
device S-parameters for various biases, and Tables 7,
8, and 9 list typical device noise parameters.
Attenuation Step (MAX2642)

The MAX2642’s DC bias voltage at RFOUT serves as
an attenuation step input. When the DC voltage at
RFOUT through a 33kΩresistor is less than +0.6V, the
device is in high-gain mode; if the DC voltage is greater
than +2.0V, the device is in low-gain mode. A standard
logic output can be applied as shown in the Typical
Operation Circuit. If no bias is applied, the device is in
high-gain mode.
Shutdown

For the MAX2643, the recommended shutdown method
is to set the DC voltage at the RFOUT pin in a manner
similar to the MAX2642’s attenuation step. That is, when
the DC voltage at RFOUT is below +0.6V, the device is
shut down; if the DC voltage is greater than +2.0V, the
device is enabled.
For the MAX2642, shutdown is achieved by leaving
BIAS unconnected. Figure 1 shows the suggested
shutdown methods. Avoid capacitance at the BIAS pin
by connecting the bias resistor from BIAS to the switch.
Table 10 summarizes the operational modes.
Layout Issues

A properly designed PC board is essential to any
RF/microwave circuit. Use controlled impedance lines
on all high-frequency inputs and outputs. Bypass with
decoupling capacitors located close to the device VCC
pin. For long VCClines, it may be necessary to add
additional decoupling capacitors. These additional
capacitors can be located farther away from the device
package. Proper grounding of the GND pins is essen-
tial. If the PC board uses a topside RF ground, connect
it directly to all GND pins. For a board where the
ground plane is not on the component layer, the best
technique is to connect the GND pins to the board with
a plated through-hole located close to the package.
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers
Table 1. MAX2642/MAX2643 Typical Scattering Parameters

(RBIAS= 510Ω, high-gain mode, VCC= +3.0V, TA= +25°C.)
MAX2642/MAX2643
900MHz SiGe, High IP3,
Low-Noise Amplifiers
Table 2. MAX2642/MAX2643 Typical Scattering Parameters
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