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MAX2620EUA+T |MAX2620EUATMAXIMN/a2500avai10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
MAX2620EUA-T |MAX2620EUATMAXIMN/a5000avai10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs


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MAX2620EUA+T-MAX2620EUA-T
10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
MAX2620VCC1
TANK
FDBK
SHDNOUT
VCC2
GND
OUT
VCCVCC
VCC
VCC
BIAS
SUPPLY
C17
1.5pF
1000pF
1000pF
1000pF
10Ω
CERAMIC
RESONATOR
VTUNE
900MHz BAND OSCILLATOR

1kΩ
ALPHA
SMV1204-34
1.5pF1.5pF
51Ω
10nH
2.7pF
1pF
0.1μF
1000pF
OUT TO SYNTHESIZER
OUT TO MIXER
SHDN
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs

19-1248; Rev 2; 2/02
EVALUATION KIT
AVAILABLE
_________________General Description

The MAX2620 combines a low-noise oscillator with two
output buffers in a low-cost, plastic surface-mount,
ultra-small µMAX package. This device integrates func-
tions typically achieved with discrete components. The
oscillator exhibits low-phase noise when properly
mated with an external varactor-tuned resonant tank
circuit. Two buffered outputs are provided for driving
mixers or prescalers. The buffers provide load isolation
to the oscillator and prevent frequency pulling due to
load-impedance changes. Power consumption is typi-
cally just 27mW in operating mode (VCC= 3.0V), and
drops to less than 0.3µW in standby mode. The MAX2620
operates from a single +2.7V to +5.25V supply.
________________________Applications

Analog Cellular Phones
Digital Cellular Phones
900MHz Cordless Phones
900MHz ISM-Band Applications
Land Mobile Radio
Narrowband PCS (NPCS)
____________________________Features
Low-Phase-Noise Oscillator: -110dBc/Hz
(25kHz offset from carrier) Attainable
Operates from Single +2.7V to +5.25V SupplyLow-Cost Silicon Bipolar DesignTwo Output Buffers Provide Load IsolationInsensitive to Supply VariationsLow, 27mW Power Consumption (VCC= 3.0V)Low-Current Shutdown Mode: 0.1µA (typ)
PART

MAX2620EUA-40°C to +85°C
TEMP RANGEPIN-PACKAGE

8 µMAX
_______________Ordering Information

MAX2620E/D-40°C to +85°CDice*
Pin Configuration appears at end of data sheet.

*Dice are tested at TA= +25°C, DC parameters only.
____________________________________________________Typical Operating Circuit
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS

(VCC1, VCC2 = +2.7V to +5.25V, FDBK = open, TANK = open, OUT and OUTconnected to VCCthrough 50Ω, SHDN= 2V, = -40°C to +85°C, unless otherwise noted. Typical values measured at VCC1 = VCC2 = 3.0V, TA= +25°C.) (Note 1)
AC ELECTRICAL CHARACTERISTICS

(Test Circuit of Figure 1, VCC= +3.0V, SHDN= VCC, ZLOAD= ZSOURCE= 50Ω, PIN= -20dBm (50Ω), fTEST= 900MHz, = +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC1, VCC2 to GND.................................................-0.3V to +6V
TANK, SHDNto GND.................................-0.3V to (VCC+ 0.3V)
OUT, OUTto GND...........................(VCC- 0.6V) to (VCC+ 0.3V)
FDBK to GND..................................(VCC- 2.0V) to (VCC+ 0.3V)
Continuous Power Dissipation (TA= +70°C)
µMAX (derate 5.7mW/°C above +70°C).....................457mW
Operating Temperature Range
MAX2620EUA.................................................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +165°C
Lead Temperature (soldering, 10s).................................+300°C0.12SHDN= 0.6VShutdown Current9.012.5
UNITSMINTYPMAXCONDITIONSPARAMETER

Supply Current2.0Shutdown Input Voltage High0.6Shutdown Input Voltage Low5.520SHDN= 2.0VShutdown Bias Current High0.5SHDN= 0.6VShutdown Bias Current Low
MHz101050TA= -40°C to +85°C (Note 2)
UNITSMINTYPMAXCONDITIONSPARAMETER

Frequency Range50OUT or OUTto TANK; OUT, OUTdriven at P = -20dBmReverse Isolation33OUT to OUTOutput Isolation
Note 2:
Guaranteed by design and characterization at 10MHz, 650MHz, 900MHz, and 1050MHz. Over this frequency range, the
magnitude of the negative real impedance measured at TANK is greater than one-tenth the magnitude of the reactive
impedances at TANK. This implies proper oscillator start-up when using an external resonator tank circuit with Q > 10. C3
and C4 must be tuned for operation at the desired frequency.
Note 1:
Specifications are production tested and guaranteed at TA= +25°C and TA= +85°C. Specifications are guaranteed by
design and characterization at TA= -40°C.
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
TYPICAL OPERATING CIRCUIT PERFORMANCE—900MHz Band Ceramic-
Resonator-Based Tank

(Typical Operating Circuit, VCC= +3.0V, VTUNE= 1.5V, SHDN= VCC,load at OUT = 50Ω, load at OUT= 50Ω, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA= +25°C, unless otherwise noted.)
-110SSB at Δf = 25kHz
MHz±13VTUNE= 0.5V to 3.0V
UNITSMINTYPMAXCONDITIONSPARAMETER

Tuning Range
dBc/Hz-132SSB at Δf = 300kHzPhase Noise-2At OUT (Note 2)
dBc-29Second-Harmonic Output
MHz/V11Average Tuning Gain
kHzP-P163VSWR = 1.75:1, all phasesLoad Pull
kHz/V71VCCstepped from 3V to 4VSupply Pushing
Note 3:
Guaranteed by design and characterization.
dBm/Hz-147fO±>10MHzNoise Power
-11-8At OUT, per test circuit of Figure 1; TA= -40°C to +85°C
(Note 3)dBm
-16-12.5At OUT(Note 3)
Output Power (Single-Ended)
TYPICAL OPERATING CIRCUIT PERFORMANCE—900MHz Band Inductor-Based Tank

(Typical Operating Circuit, VCC= +3.0V, VTUNE= 1.5V, SHDN= VCC,load at OUT = 50Ω, load at OUT= 50Ω, L1 = 5nH (Coilcraft
A02T), C6 = 1.5pF, TA= +25°C, unless otherwise noted.)
MHz/V13Average Tuning Gain
dBm/Hz-147fO±>10MHzNoise Power
kHzP-P340VSWR = 1.75:1, all phase anglesLoad Pull
kHz/V150VCCstepped from 3V to 4VSupply Pushing
-11-8At OUT, per test circuit of Figure 1; TA= -40°C to +85°C
(Note 3)dBm
-16-12.5At OUT(Note 3)
Output Power (single-ended)
-107SSB at Δf = 25kHz
MHz±15VTUNE= 0.5V to 3.0V
UNITSMINTYPMAXCONDITIONSPARAMETER

Tuning Range
dBc/Hz-127SSB at Δf = 300kHzPhase Noise-2At OUT (Note 2)
dBc-29Second-Harmonic Output
Note 3:
Guaranteed by design and characterization.
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
__________________________________________Typical Operating Characteristics

(Test Circuit of Figure 1, VCC= +3.0V, SHDN= VCC, ZLOAD= ZSOURCE= 50Ω, PIN= -20dBm/50Ω, fTEST= 900MHz, TA= +25°C,
unless otherwise noted.)
10MHz BAND CIRCUIT
NOT CHARACTERIZED FOR THIS FREQUENCY BAND.
EXPECTED PERFORMANCE SHOWN.
900MHz BAND CIRCUIT
OUT OUTPUT POWER vs. FREQUENCY
OVER VCC AND TEMPERATURE
MAX2620-01
FREQUENCY (MHz)
POWER (dBm)
TA = +85°C
TA = +25°C
TA = -40°C
VCC = 5.25V
VCC = 5.25V
VCC = 2.7V
VCC = 2.7V
OUT OUTPUT POWER vs. FREQUENCY
OVER VCC AND TEMPERATURE
MAX2620-02
FREQUENCY (MHz)
POWER (dBm)
VCC = 5.25V
VCC = 2.7V
TA = +85°C
TA = +25°C
TA = -40°C
FREQUENCY
(MHz)
REAL COMPONENT
(R in Ω)
IMAGINARY COMPONENT
(X in Ω)

Table 1. Recommended Load Impedance at OUT or OUTfor
Optimum Power Transfer
9507.326.3
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
900MHz BAND CIRCUIT*
TYPICAL 1/S11 vs. FREQUENCY
MEASURED AT TEST PORT

MAX2620-04
650MHz84 + j142800MHz
49 + j105
900MHz
36 + j90
1050MHz21 + j78
*SEE FIGURE 1
10MHz BAND CIRCUIT
TYPICAL 1/S11 vs. FREQUENCY
MEASURED AT TEST PORT

MAX2620-05
5MHz
262 + j261
10MHz
63.6 + j121.5
15MHz28 + j79.8
C3 = C4 = 270pF
L3 = 10μH
C2 = C10 = C13 = 0.01μF
SUPPLY CURRENT
vs. TEMPERATURE
MAX2620-06
TEMPERATURE (°C)
SUPPLY CURRENT (mA)8.0
VCC = 2.7V
VCC = 5.25V
REVERSE ISOLATION vs. FREQUENCY
MAX2620-03
FREQUENCY (MHz)
REVERSE ISOLATION (dB)
VCC = 2.7V TO 5.25V
C3, C4 REMOVED
_____________________________Typical Operating Characteristics (continued)

(Typical Operating Circuit, VCC= +3.0V, VTUNE= 1.5V, SHDN= VCC,load at OUT = 50Ω, load at OUT= 50Ω, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA= +25°C, unless otherwise noted.)
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
_______________________________________________________________Pin Description
NAMEFUNCTIONPIN
FDBK
Oscillator Feedback Circuit Connection. Connecting capacitors of the appropriate value between FDBK and
TANK and between FDBK and GND tunes the oscillator’s reflection gain (negative resistance) to peak at the
desired oscillation frequency. Refer to the Applications Informationsection.TANKOscillator Tank Circuit Connection. Refer to the Applications Informationsection.VCC1
Oscillator DC Supply Voltage. Decouple VCC1 with 1000pF capacitor to ground. Use a capacitor with low
series inductance (size 0805 or smaller). Further power-supply decoupling can be achieved by adding a
10Ωresistor in series from VCC1 to the supply. Proper power-supply decoupling is critical to the low noise
and spurious performance of any oscillator.OUT
Open-Collector Output Buffer. Requires external pull-up to the voltage supply. Pull-up can be resistor,
choke, or inductor (which is part of a matching network). The matching-circuit approach provides the high-
est-power output and greatest efficiency. Refer to Table 1 and the Applications Informationsection. OUT
can be used with OUTin a differential output configuration.VCC2Output Buffer DC Supply Voltage. Decouple VCC2 with a 1000pF capacitor to ground. Use a capacitor with
low series inductance (size 0805 or smaller).GNDGround Connection. Provide a low-inductance connection to the circuit ground plane.OUT
Open-Collector Output Buffer (complement). Requires external pull-up to the voltage supply. Pull-up can be
resistor, choke, or inductor (which is part of a matching network). The matching-circuit approach provides
the highest-power output and greatest efficiency. Refer to Table 1 and the Applications Informationsection.
OUTcan be used with OUT in a differential output configuration.SHDNLogic-Controlled Input. A low level turns off the entire circuitry such that the IC will draw only leakage current
at its supply pins. This is a high-impedance input.
_____________________________Typical Operating Characteristics (continued)

(Typical Operating Circuit, VCC= +3.0V, VTUNE= 1.5V, SHDN= VCC,load at OUT = 50Ω, load at OUT= 50Ω, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA= +25°C, unless otherwise noted.)
PHASE NOISE vs. TEMPERATURE
MAX2620-07
TEMPERATURE (°C)
SSB PHASE NOISE (dBc/Hz)
SSB @ Δf = 25kHz
L1 = 5nH INDUCTOR
C6 = 1.5pF
L1 = COAXIAL CERAMIC RESONATOR
(TRANS-TECH SR8800LPQ1357BY)
C6 = 1pF
OUTPUT SPECTRUM
FUNDAMENTAL NORMALIZED TO 0dB
MAX2620-08
FREQUENCY (GHz)
RELATIVE OUTPUT LEVEL (dBc)
SINGLE SIDEBAND PHASE NOISE
MAX2620-09
OFFSET FREQUENCY (kHz)
SSB PHASE NOISE (dBc/Hz)
L1 = 5nH INDUCTOR
C6 = 1.5pF
L1 = COAXIAL
CERAMIC RESONATOR
(TRANS-TECH
SR8800LPQ1357BY)
C6 = 1pF
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