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MAX1840EUB+ |MAX1840EUBMAXIMN/a4505avaiLow-Voltage SIM/Smart-Card Level Translators in µMAX
MAX1840EUB+TMAXIMN/a6400avaiLow-Voltage SIM/Smart-Card Level Translators in µMAX


MAX1840EUB+T ,Low-Voltage SIM/Smart-Card Level Translators in µMAXELECTRICAL CHARACTERISTICS(Figure 1, DV = +1.8V; V = +1.8V, +3.0V, or +5.0V; SHDN = DV , CIN = RIN ..
MAX1841EUB ,Low-Voltage SIM/Smart Card Level Translators in MAXFeaturesThe MAX1840/MAX1841 subscriber identity module SIM/Smart Card Level Shifting(SIM)/smart ca ..
MAX1841EUB ,Low-Voltage SIM/Smart Card Level Translators in MAXFeaturesThe MAX1840/MAX1841 subscriber identity module SIM/Smart Card Level Shifting(SIM)/smart ca ..
MAX1841EUB ,Low-Voltage SIM/Smart Card Level Translators in MAXMAX1840/MAX184119-1716; Rev 0; 4/00Low-Voltage SIM/Smart Card Level Translators in µMAX
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MAX1840EUB+-MAX1840EUB+T
Low-Voltage SIM/Smart-Card Level Translators in µMAX
General Description
The MAX1840/MAX1841 subscriber identity module
(SIM)/smart card level translators provide level shifting
and electrostatic discharge (ESD) protection for SIM and
smart card ports. These devices integrate two unidirec-
tional level shifters for the reset and clock signals, a bidi-
rectional level shifter for the serial data stream, and
±10kV ESD protection on all card contacts.
The MAX1840 includes a SHDNcontrol input to aid
insertion and removal of SIM and smart cards, while the
MAX1841 includes a system-side data driver to support
system controllers without open-drain outputs. The logic
supply voltage range is +1.4V to +5.5V for the “controller
side” and +1.7V to +5.5V for the “card side.” Total sup-
ply current is 1.0µA. Both devices automatically shut
down when either power supply is removed. For a com-
plete SIM card interface, combine the MAX1840/
MAX1841 with the MAX1686H 0V/3V/5V regulated
charge pump.
The MAX1840/MAX1841 are available in ultra-small
10-pin µMAX packages that are only 1.09mm high and
half the area of an 8-pin SO.
The MAX1840/MAX1841 are compliant with GSM test
specifications 11.11 and 11.12.
Applications

SIM Interface in GSM Cellular Telephones
Smart Card Readers
Logic Level Translation
SPI™/QSPI™/MICROWIRE™ Level Translation
Features
SIM/Smart Card Level Shifting+1.4V to +5.5V Controller Voltage Range+1.7V to +5.5V Card Voltage Range±10kV ESD Card Socket ProtectionAllows Level Translation with DVCCVCC or
DVCC ≤VCC
Automatically Shuts Down When Either Supply Is
Removed
Card Contacts Actively Pulled Low During
Shutdown
1µA Total Quiescent Supply Current0.01µA Total Shutdown Supply CurrentUltra-Small 10-Pin µMAX PackageCompliant with GSM Test Specifications 11.11
and11.12
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
1DATA
VCC
CLK
RST
GNDSHDN (DDRV)
( ) ARE FOR MAX1841.
RIN
CIN
DVCC
MAX1840
MAX1841
μMAX
TOP VIEWVCC
SIM OR
SMART
CARD
SYSTEM
CONTROLLER
CLK
GNDGND
CLK
GND
VCCDVCCDVCC
MAX1840
MAX1841
SHDN*
OPTIONAL
RIN
CIN
RSTRST
OPTIONAL
DATA
DDRV*
SHDN FOR MAX1840 ONLY;
DDRV FOR MAX1841 ONLY.
DVCCVCC
Typical Operating Circuit

19-1716; Rev 0; 4/00
PART
MAX1840EUB
MAX1841EUB
-40°C to +85°C
-40°C to +85°C
TEMP. RANGEPIN-PACKAGE

10 µMAX
10 µMAX
Pin Configuration
Ordering Information

SPI and QSPI are trademarks of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS

(Figure 1, DVCC= +1.8V; VCC= +1.8V, +3.0V, or +5.0V; SHDN= DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC,
CIO= CCLK= CRST= CDATA= 30pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DVCC, VCCto GND................................................-0.3V to +6.0V
RIN, CIN, DATA, DDRV,
SHDNto GND......................................-0.3V to (DVCC + 0.3V)
RST, CLK, IO to GND.................................-0.3V to (VCC + 0.3V)
Continuous Power Dissipation (TA= +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C)...........444mW
Operating Temperature Range...........................-40°C to +85°C
Storage Temperature Range.............................-65°C to +150°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s).................................+300°C
UNITS

DVCCOperating RangeDVCC1.45.5V
VCC Operating RangeVCC1.75.5V
DVCCOperating CurrentIDVCC
CIN static0.10.5
CIN clocked at 1.625MHz from GND to DVCC
with 50% duty cycle
CONDITIONS

CIN clocked at 3.25MHz from GND to DVCC
with 50% duty cycle5
VCCOperating CurrentIVCC
CIN static0.93.0
CIN clocked at 1.625MHz from GND to DVCC
with 50% duty cycle0.4
CIN clocked at 3.25MHz from GND to DVCC
with 50% duty cycle0.8
Total Shutdown CurrentISHDN
IOFF= IVCC+ IDVCC, SHDN= GND
(MAX1840 only), or DVCC= GND
or VCC= GND
0.011µA
Digital Input Low ThresholdVIL0.2 ✕DVCCV
Digital Input High ThresholdVIH0.7 ✕DVCCV
Input Leakage Current0.011µA
Digital Output Low LevelVOLISINK= 200µA0.4V
Digital Output High LevelVOHISOURCE= 20µA0.9 ✕VCCVISOURCE= 200µA0.8 ✕VCC
DATA Pullup ResistanceRDATABetween DATA and DVCC132028kΩ
Input Low ThresholdVIL(DATA)(Note 2)0.3V
Input High ThresholdVIH(DATA)(Note 3)DVCC- 0.6V
Input Low CurrentIILVCC= 5.0V1mA
MINTYPMAXSYMBOLPARAMETER

Input High CurrentIIH2µA
POWER SUPPLIES
CIN, RIN, SHDN, DDRV LOGIC INPUTS
CLK, RST OUTPUTS
DATA INPUT/OUTPUT

MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
ELECTRICAL CHARACTERISTICS (continued)

(Figure 1, DVCC= +1.8V; VCC= +1.8V, +3.0V, or +5.0V; SHDN= DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC,
CIO= CCLK= CRST= CDATA= 30pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note1)
UNITSCONDITIONSMINTYPMAXSYMBOLPARAMETER

Output Low LevelVOL(DATA)IO = GND, ISINK= 100µA0.4VDVCC= 3.0V, IO = GND, ISINK= 200µA0.4
Output High LevelISOURCE= 10µA0.7 ✕DVCCVDVCC= 3.0V, ISOURCE= 20µA0.7 ✕DVCCVOH(DATA)
IO Pullup ResistanceRIOBetween IO and VCC6.51014kΩ
Input Low ThresholdVIL(IO)IIL(MAX)= 1mA (Note 2)0.3V
Input High ThresholdVIH(IO)IIH(MAX)= ±20µA (Note 3)0.7 ✕VCCV
Input Low CurrentIIL1mA
Input High CurrentIIH20µA
Output Low LevelVOL(IO)DATA = GND or DDRV = GND,
ISINK= 200µA0.4V
Output High LevelVOH(IO)ISOURCE= 20µA0.8 ✕VCCV
Shutdown Output Levels
(IO, CLK, RST)
ISINK= 200µA, SHDN= GND, DATA = CIN =
RIN = DVCC(MAX1840 only)0.4V
ISINK= 200µA, DVCC= GND, SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DVCC
0.4V
ISINK= 200µA, VCC= GND, SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DVCC
0.4V
Maximum CLK Frequency
(Notes 4, 5)fCLK
VCC= 2.7V to 5.5V, DVCC= 1.4V to 2.7V520
MHz
VCC= 1.7V to 3.6V, DVCC= 1.4V to 2.25V515
IO (INPUT/OUTPUT)
SHUTDOWN OUTPUT LEVELS
TIMING
Note 1:
Specifications to -40°C are guaranteed by design, not production tested.
Note 2:
VILis defined as the voltage at which the output (DATA/IO) voltage equals 0.5V.
Note 3:
VIHis defined as the voltage at which the output (DATA/IO) voltage exceeds the input (IO/DATA) voltage by 100mV.
Note 4:
Timing specifications are guaranteed by design, not production tested.
Note 5:
The maximum CLK frequency is defined as the output duty cycle remaining in the 40% to 60% range when the 50% CIN is
applied. CIN has 5ns rise and fall times; levels are GND to DVCC. Input and output levels are measured at 50% of the waveform.
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
Typical Operating Characteristics

(Circuit of Figure 1, DVCC= 3.0V, VCC= +5.0V, DDRV or DATA = DVCC, RIN = CIN = GND, TA= +25°C, unless otherwise noted.)
TOTAL OPERATING SUPPLY CURRENT
vs. CLOCK FREQUENCY (DATA STATIC)
MAX1840/1-01
FREQUENCY (MHz)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
DATA OR DDRV = DVCC
CIN CLOCKED WITH A
0 TO DVCC SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
TOTAL OPERATING SUPPLY CURRENT
vs. CARD-SIDE SUPPLY VOLTAGE
(DATA STATIC)
MAX1840/1-02
VCC (V)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
DATA OR DDRV = DVCC
CIN CLOCKED WITH A
0 TO DVCC SQUARE WAVE
fCIN = 5MHz
fCIN = 3.25MHz
fCIN = 1.625MHz
TOTAL OPERATING SUPPLY CURRENT
vs. TEMPERATURE (DATA STATIC)
MAX1840/1-03
TEMPERATURE (°C)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
DATA OR DDRV = DVCC
CIN CLOCKED WITH A
0 TO DVCC SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
fCIN = 5MHz
TOTAL OPERATING SUPPLY CURRENT
vs. CLOCK FREQUENCY (DATA ACTIVE)
MAX1840/1-04
FREQUENCY (MHz)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
fDATA OR fDDRV = fCIN/372
CIN CLOCKED WITH A
0 TO DVCC SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
TOTAL OPERATING SUPPLY CURRENT
vs. CARD-SIDE SUPPLY VOLTAGE
(DATA ACTIVE)
MAX1840/1-05
VCC (V)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
fDATA OR fDDRV = fCIN/372
CIN CLOCKED WITH A
0 TO DVCC SQUARE WAVE
fCIN = 5MHz
fCIN = 3.25MHz
fCIN = 1.625MHz
TOTAL OPERATING SUPPLY CURRENT
vs. TEMPERATURE (DATA ACTIVE)
MAX1840/1-06
TEMPERATURE (°C)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
fDATA OR fDDRV = fCIN/372
CIN CLOCKED WITH A
0 TO DVCC SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
fCIN = 5MHz
CIN TO CLK OR RIN TO RST
WAVEFORM (3V TO 5V)

MAX1840/1-07
20ns/div
CIN OR RIN
2V/div
fCIN = 5MHz
CLK OR RST
2V/div
CIN TO CLK OR RIN TO RST
WAVEFORM (3V TO 1.8V)

MAX1840/1-08
20ns/div
CIN OR RIN
2V/div
fCIN = 5MHz
1.8VCLK OR RST
1V/div
CIN TO CLK OR RIN TO RST
WAVEFORM (1.8V TO 1.8V)

MAX1840/1-09
20ns/div
CIN OR RIN
1V/div
1.8V
1.8VCLK OR RST
1V/div
fCIN = 5MHz
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
UNDERVOLTAGE
SHUTDOWN WAVEFORM

MAX1840/1-10
1ms/div
VCC
0.5V/div
1.5V
CLK, RST, OR IO
0.5V/div
DDRV TO IO AND DATA WAVEFORM
(MAX1841 ONLY)

MAX1840/1-11
1μs/div
DDRV
2V/div
2V/div
DATA
2V/div
Typical Operating Characteristics (continued)

(Circuit of Figure 1, DVCC= 3.0V, VCC= +5.0V, DDRV or DATA = DVCC, RIN = CIN = GND, TA= +25°C, unless otherwise noted.)
NAME
2DVCC3CIN4RIN5DDRV8CLK7RST6GND—SHDNDATA1
System Controller Data Input/Output. An open-drain IO with a 20kΩpull-up
resistor to DVCC. For bidirectional data transfer, connect to an open-drain controller output
capable of sinking 1mA while pulling DATA low. If the controller is not open-drain, use
DDRV to send data and DATA to receive data.
MAX1840MAX1841
10IO9VCC
Card-Side Bidirectional Input/Output. An open-drain output with a 10kΩpull-up resistor to
VCC. For bidirectional data transfer, connect to an open-drain card output capable of sink-
ing 1mA while pulling IO low. Actively pulled low during shutdown.
Supply Voltage for Card-Side Digital Pins. Set at +1.7V to +5.5V. Proper supply bypassing
is required to meet ±10kV ESD specifications.
Clock Output to Card. Actively pulled low during shutdown.
Reset Output to Card. Actively pulled low during shutdown.
System Controller and Card Ground
Shutdown Mode Input. Driving SHDNlow reduces the total supply current to less than
1µA. In shutdown mode, RST, CLK, and IO are actively pulled low and the transfer gate
between DATA and IO is disabled. When not used, connect SHDNto DVCC.
Optional System Controller Data Input. Connect to controllers without an open-drain out-
put. When not used, connect DDRV to DVCC.
System Controller Reset Input
System Controller Clock Input
Supply Voltage for System Controller Digital Pins. Set at +1.4V to +5.5V.
FUNCTION
PIN
Pin Description
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
Detailed Description

The MAX1840/MAX1841 provide the necessary level
translation for interfacing with SIMs and smart cards in
multivoltage systems. These devices operate with logic
supply voltages between +1.4V and +5.5V on the con-
troller side (DVCC) and between +1.7V and +5.5V on the
card side (VCC). The total supply current (IDVCC+ IVCC)
is 1µA while operating in an idle state (see Electrical
Characteristics). Figure 1 shows the MAX1840/MAX1841
test circuit. The Typical Application Circuitappears at the
end of this data sheet.
Level Translation

The MAX1840/MAX1841 provide level translators for a
clock input, a reset input, and a bidirectional data IO.
The clock and reset inputs (CIN and RIN) are level shift-
ed from the controller-side supply rails (DVCCto GND)
to the card-side supply rails (VCCto GND). When con-
nected to an open-drain controller output, DATA and IO
provide bidirectional level translation. All level transla-
tion is valid for DVCC≥VCCor DVCC≤VCC. The
MAX1840/MAX1841 contain internal pull up resistors
from DATA to the controller-side supply (DVCC)and
from IO to the card-side supply (VCC). For push-pull
controller outputs, see the Data Driversection for bidi-
rectional data translation.
Data Driver (MAX1841 Only)

When using a microcontroller (µC) without an open-drain
output, use the data driver (DDRV) input to send data to
the SIM/smart card, while DATA provides the controller-
side output for bidirectional data transfer. When not
used, connect DDRV to DVCCto reduce total supply cur-
rent.
Shutdown Mode

For the MAX1840, drive SHDNlow to activate shut-
down. Connect SHDNto DVCCor drive high for normal
operation. To allow for card insertion and removal, shut-
down mode actively pulls CLK, RST, and IO low; it also
disconnects the internal 10kΩpull up resistor from VCC
to prevent excessive current draw. Shutdown mode
reduces the total supply current (IDVCC+ IVCC) to
0.01µA.
SIM/Smart Card Insertion/Removal

The SIM/smart card specifications require that the card-
side pins (VCC, CLK, RST, IO) be at ground potential
prior to inserting the SIM/smart card. For applications
using the MAX1686H (Figure 3), the easiest way to
achieve this is by shutting down the MAX1686H or by
driving SHDN(MAX1840 only) low. If specific sequenc-
ing is desired, pull IO low by driving either DATA or
DDRV (MAX1841 only) low, and pull CLK and RST low
by driving CIN and RIN low, respectively.
ESD Protection

As with all Maxim devices, ESD-protection structures on
all pins protect against ESDs encountered during han-
dling and assembly. For further protection during card
insertion and removal, the pins that connect to the card
socket (CLK, RST, IO, VCC, and GND) provide protec-
tion against ±10kV of ESD. The ESD structures with-
stand high ESD in all states: normal operation,
shutdown, and power-down. After an ESD event, the
MAX1840/MAX1841 continue working without latchup.
A 1µF bypass capacitor from VCCto GND is required to
exceed ±10kV ESD specifications.
ESD Test Conditions

ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report documenting test
setup, test methodology, and test results.
Applications Information
SIM/Smart Card Interface

To provide 5V when interfacing with a 5V SIM/smart card,
+3V systems require a DC-DC converter. The MAX1686H
+5V regulating charge pump for SIM cards provides
GND
CLK
RST
VCCDVCC+1.8V
+1.8V,
+3.0V, OR
+5.0V
30pF
30pF
30pF30pF
MAX1840
MAX1841
SHDN*
RIN
CIN
DDRV*
DATA
SHDN FOR MAX1840 ONLY;
DDRV FOR MAX1841 ONLY.
NOTE: ALL CAPACITANCES INCLUDE CAPACITIVE LOADS OF
TEST PROBES AND BOARD LAYOUT.
Figure 1. MAX1840/MAX1841 Test Circuit
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