MAX15013AASA+T-MAX15013BASA+T Fast Delivery |IC PHOENIX CO.,LIMITED

MAX15013AASA+T ,175V/2A, High-Speed, Half-Bridge MOSFET DriversApplicationsOrdering InformationTelecom Half-Bridge Power SuppliesPIN- PKGPART TEMP RANGETwo-Switch ..
MAX15013BASA+T ,175V/2A, High-Speed, Half-Bridge MOSFET Driversapplications. These♦ Up to 175V Input Operationdrivers are independently controlled and their 35ns ..
MAX1501ETE+T ,Highly Integrated, Linear Battery Charger with Thermal Regulation for Portable ApplicationsFeatures The MAX1501 intelligent, constant-current, constant- ♦ Stand-Alone 1-Cell Li+ Charging, M ..
MAX15023ETG+ ,Wide 4.5V to 28V Input, Dual-Output Synchronous Buck ControllerFeatures● 5.5V to 28V or 5V ±10% Input Supply RangeThe MAX15023 dual, synchronous step-down control ..
MAX15023ETG+T ,Wide 4.5V to 28V Input, Dual-Output Synchronous Buck ControllerElectrical Characteristics(V = 12V, R = 33kΩ, C = 4.7µF, C = 1µF, T = -40°C to +85°C, unless otherw ..
MAX15024AATB+T ,Single/Dual, 16ns, High Sink/Source Current Gate DriversFeaturesThe MAX15024/MAX15025 single/dual, high-speed♦ 8A Peak Sink Current/4A Peak Source CurrentM ..
MAX4128ESA+ ,Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op AmpsELECTRICAL CHARACTERISTICS (V = +2.7V to +6.5V, V = 0V, V = 0V, V = V /2, R tied to V /2, SHDN ‡ 2V ..
MAX4128EUA ,Dual, wide-bandwidth, low-power, single-supply Rail-to-Rail I/O op amp. BW 25MHz.MAX4122–MAX412919-1087; Rev 1; 8/97Single/Dual/Quad, Wide-Bandwidth, Low-Power,Single-Supply Rail-t ..
MAX4129ESD ,Quad, wide-bandwidth, low-power, single-supply Rail-to-Rail I/O op amp. BW 5MHz.ELECTRICAL CHARACTERISTICS (continued)(V = +2.7V to +6.5V, V = 0V, V = 0V, V = V /2, R tied to V /2 ..
MAX4129ESD+ ,Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op AmpsMAX4122–MAX412919-1087; Rev 1; 8/97Single/Dual/Quad, Wide-Bandw idth, Low -Pow er,Single-Supply Rai ..
MAX4129ESD+T ,Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op AmpsFeaturesThe MAX4122–MAX4129 family of operational amplifiers♦ 5-Pin SOT23 Package (MAX4122/4)combin ..
MAX412BCSA ,Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op AmpsFeatures The MAX410/MAX412/MAX414 single/dual/quad op amps set a new standard for noise perform ..

MAX15013AASA+T-MAX15013BASA+T
175V/2A, High-Speed, Half-Bridge MOSFET Drivers
General Description
The MAX15012/MAX15013 high-frequency, 175V half-
bridge, n-channel MOSFET drivers drive high- and low-
side MOSFETs in high-voltage applications. These
drivers are independently controlled and their 35ns typ-
ical propagation delay, from input to output, are
matched to within 2ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities make
these devices suitable for the high-power, high-fre-
quency telecom power converters. A reliable on-chip
bootstrap diode connected between VDDand BST
eliminates the need for an external discrete diode.
The MAX15012A/C and MAX15013A/C offer both nonin-
verting drivers (see the Selector Guide). The
MAX15012B/D and MAX15013B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX15012A/B/C/D feature CMOS (VDD/2) logic inputs.
The MAX15013A/B/C/D feature TTL logic inputs. The
drivers are available in the industry-standard 8-pin SO
footprint and pin configuration and a thermally
enhanced 8-pin SO package. All devices operate over
the -40°C to +125°C automotive temperature range.
Applications
Telecom Half-Bridge Power Supplies
Two-Switch Forward Converters
Full-Bridge Converters
Active-Clamp Forward Converters
Power-Supply Modules
Motor Control
FeaturesHIP2100/HIP2101 Pin Compatible (MAX15012A/C
and MAX15013A/C)Up to 175V Input Operation8V to 12.6V VDDInput Voltage Range2A Peak Source and Sink Current Drive Capability35ns Typical Propagation DelayGuaranteed 8ns Propagation Delay Matching
Between DriversUp to 500kHz Switching FrequencyAvailable in CMOS (VDD/2) or TTL Logic-Level
Inputs with HysteresisUp to 14V Logic Inputs Independent of Input
VoltageLow 2.5pF Input CapacitanceLow 70μA Supply CurrentVersions Available with Combination of
Noninverting and Inverting Drivers (MAX15012B/D
and MAX15013B/D)Available in Industry-Standard 8-Pin SO and
Thermally Enhanced SO Packages
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
PARTTEMP RANGEPIN-
PACKAGE
PKG
CODE
MAX15012AASA+-40°C to +125°C8 SOS8-5
MAX15012BASA+-40°C to +125°C8 SOS8-5
MAX15012CASA+*-40°C to +125°C8 SO-EP**S8E+14
MAX15012DASA+*-40°C to +125°C8 SO-EP**S8E+14
Ordering Information
PARTHIGH-SIDE DRIVERLOW-SIDE DRIVERLOGIC LEVELSPIN COMPATIBLE
MAX15012AASA+NoninvertingNoninvertingCMOS (VDD/2)HIP 2100IB
MAX15012BASA+NoninvertingInvertingCMOS (VDD/2)—
MAX15012CASA+NoninvertingNoninvertingCMOS (VDD/2)HIP 2100IB
MAX15012DASA+NoninvertingInvertingCMOS (VDD/2)—
MAX15013AASA+NoninvertingNoninvertingTTLHIP 2101IB
MAX15013BASA+NoninvertingInvertingTTL—
MAX15013CASA+NoninvertingNoninvertingTTLHIP 2101IB
MAX15013DASA+NoninvertingInvertingTTL—
Selector Guide
19-0530; Rev 1; 12/07
Ordering Information continued at end of data sheet.
+Denotes lead-free package.
*Future product—contact factory for availability.
**EP = Exposed pad.
Pin Configurations and Typical Operating Circuit appear at
the end of data sheet.
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD= VBST= +8V to +12.6V, VHS= GND = 0V, TA= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at VDD=
VBST= +12V and TA= +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND, unless otherwise noted.)
VDD, IN_H, IN_L......................................................-0.3V to +14V
DL...............................................................-0.3V to (VDD+ 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (VDD+ 0.3V)
BST to HS...............................................................-0.3V to +14V
dV/dt at HS........................................................................50V/ns
Continuous Power Dissipation (TA= +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO-EP (derate 19.2mW/°C above +70°C).....1538.5mW
Junction-to-Case Thermal Resistance (θJC)(Note 1)
8-Pin SO.......................................................................40°C/W
8-Pin SO-EP....................................................................6°C/W
Junction-to-Ambient Thermal Resistance (θJA)(Note 1)
8-Pin SO.....................................................................170°C/W
8-Pin SO-EP..................................................................52°C/W
Maximum Junction Temperature.....................................+150°C
Operating Temperature Range.........................-40°C to +125°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
POWER SUPPLIES
Operating Supply VoltageVDD(Notes 3 and 4)8.012.6V
VDD Quiescent Supply Current
(No Switching)IDDIN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = VDD (for B/D versions)70140µA
VDD Operating Supply CurrentIDDOfSW = 500kHz, VDD = +12V3mA
BST Quiescent Supply CurrentIBSTIN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = VDD (for B/D versions)1540µA
BST Operating Supply CurrentIBSTOfSW = 500kHz, VDD = VBST = +12V3mA
UVLO (VDD to GND)UVLOVDDVDD rising6.57.38.0V
UVLO (BST to HS)UVLOBSTBST rising6.06.97.8V
UVLO Hysteresis0.5V
LOGIC INPUT
MAX15012_, CMOS (VDD/2) version0.67 x
VDD
0.55 x
VDDInput-Logic HighVIH_
MAX15013_, TTL version21.65
MAX15012_, CMOS (VDD/2) version0.4 x
VDD
0.33 x
VDDInput-Logic LowVIL_
MAX15013_, TTL version1.40.8
MAX15012_, CMOS (VDD/2) version1.6Logic-Input HysteresisVHYSMAX15013_, TTL version0.25V
*Per JEDEC 51 Standard Multilayer board.
Note 1:Package thermal resistances were obtained using the method described in JEDEC specification JE5D51-7, using a four-
layer board. For detailed information on package thermal considerations, see /thermal-tutorial.
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(VDD= VBST= +8V to +12.6V, VHS= GND = 0V, TA= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at VDD=
VBST= +12V and TA= +25°C.) (Note 2)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
VIN_L = VDD for MAX15012B/MAX15012D/
MAX15013B/MAX15013D
VIN_H = 0VLogic-Input CurrentI_IN
VIN_L = 0V for MAX15012A/MAX15012C/
MAX15013A/MAX15013C+0.001+1µA
IN_H to GND
IN_L to VDD for MAX15012B/MAX15012D/
MAX15013B/MAX15013DInput ResistanceRIN
IN_L to GND for MAX15012A/MAX15012C/
MAX15013A/MAX15013C
1MΩ
Input CapacitanceCIN2.5pF
HIGH-SIDE GATE DRIVER
HS Maximum VoltageVHS_MAXVDD ≤ 10.5V (Note 4)175V
BST Maximum VoltageVBST_MAXVDD ≤ 10.5V (Note 4)189V
TA = +25°C2.53.3Driver Output Resistance
(Sourcing)RON_HPVDD = 12V, IDH = 100mA
(sourcing)TA = +125°C3.54.6Ω
TA = +25°C2.12.8Driver Output Resistance
(Sinking)RON_HNVDD = 12V, IDH = 100mA
(sinking)TA = +125°C3.24.2Ω
DH Reverse Current (Latchup
Protection)(Note 5)400mA
Power-Off Pulldown Clamp
VoltageVBST = 0V or floating, IDH = 1mA (sinking)0.941.16V
Peak Output Current (Sourcing)CL = 10nF, VDH = 0V2A
Peak Output Current (Sinking)IDH_PEAKCL = 10nF, VDH = 12V2A
LOW-SIDE GATE DRIVER
TA = +25°C2.53.3Driver Output Resistance
(Sourcing)RON_LPVDD = 12V, IDL = 100mA
(sourcing)TA = +125°C3.54.6Ω
TA = +25°C2.12.8Driver Output Resistance
(Sinking)RON_LNVDD = 12V, IDL = 100mA
(sinking)TA = +125°C3.24.2Ω
Reverse Current at DL (Latchup
Protection)(Note 5)400mA
Power-Off Pulldown Clamp
VoltageVDD = 0V or floating, IDL = 1mA (sinking)0.951.16V
Peak Output Current (Sourcing)IPK_LPCL = 10nF, VDL = 0V2A
Peak Output Current (Sinking)IPK_LNCL = 10nF, VDL = 12V2A
INTERNAL BOOTSTRAP DIODE
Forward Voltage DropVFIBST = 100mA0.911.11V
Turn-On and Turn-Off TimetRIBST = 100mA40ns
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Note 2:All devices are 100% tested at TA= +125°C. Limits over temperature are guaranteed by design.
Note 3:Ensure that the VDD-to-GND or BST-to-HS transient voltage does not exceed 13.2V.
Note 4:Maximum operating supply voltage (VDD) reduces linearly from 12.6V to 10.5V with its maximum voltage (VHS_MAX) increasing
from 125V to 175V. See the Typical Operating Characteristicsand Applications Informationsections.
Note 5:Guaranteed by design, not production tested.
Note 6:See the Minimum Input Pulse Widthsection.
ELECTRICAL CHARACTERISTICS (continued)
(VDD= VBST= +8V to +12.6V, VHS= GND = 0V, TA= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at VDD=
VBST= +12V and TA= +25°C.) (Note 2)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (VDD = VBST = +12V)
CL = 1000pF7
CL = 5000pF33Rise TimetR
CL = 10,000pF65
CL = 1000pF7
CL = 5000pF33Fall TimetF
CL = 10,000pF65
CMOS3055Turn-On Propagation Delay TimetD_ONFigure 1, CL = 1000pF
(Note 5)TTL3563ns
CMOS3055Turn-Off Propagation Delay TimetD_OFFFigure 1, CL = 1000pF
(Note 5)TTL3563ns
Delay Matching Between Driver-
Low and Driver-HightMATCHCL = 1000pF, Figure 1 (Note 5)28ns
Internal Nonoverlap1ns
VDD = VBST = 12V135Minimum Pulse Width Input Logic
(Note 6)tPW-minVDD = VBST = 8V170ns
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
UNDERVOLTAGE LOCKOUT
(VDD AND VBST RISING) vs. TEMPERATURE
MAX15012/13 toc01
TEMPERATURE (°C)
UVLO (V)
UVLOVDD
UVLOBST
VDD AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
MAX15012/13 toc02
TEMPERATURE (°C)
UVLO HYSTERESIS (V)
UVLOBST
HYSTERESIS
UVLOVDD
HYSTERESIS
IDD vs. VDD
MAX15012/13 toc03
4ms/div
VDD
2V/div
IDD
50μA/div0μA
IN_H = GND
IN_L = VDD
IDDO + IBSTO vs. VDD
(fSW = 250kHz)
MAX15012/13 toc04
VDD (V)
IDDO
IBSTO
(mA)1011345678912
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
MAX15012/13 toc05
VDD - VBST (V)
IDIODE
(mA)
TA = +125°C
TA = +25°C
TA = 0°C
TA = -40°C
VDD QUIESCENT CURRENT
vs. VDD (NO SWITCHING)
MAX15012/13 toc06
VDD (V)
IDD
TA = -40°C
TA = +25°C
VDD = VBST
VHS = GND
IN_H = GND
IN_L = VDD
TA = +125°C26810153791112131415
BST QUIESCENT CURRENT
vs. BST VOLTAGE
MAX15012/13 toc07
VBST (V)
IBST
VBST = VDD + 1V,
NO SWITCHING
TA = +125°C
TA = -40°C, TA = 0°C, TA = +25°C
Typical Operating Characteristics
(Typical values are at VDD= VBST= +12V and TA= +25°C, unless otherwise specified.)
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
VDD AND BST OPERATING SUPPLY
CURRENT vs. FREQUENCY
MAX15012/13 toc08
FREQUENCY (kHz)
DDO
+ I
BSTO
(mA)
CL = 0
DH OR DL OUTPUT LOW VOLTAGE
vs. TEMPERATURE
MAX15012/13 toc09
TEMPERATURE (°C)
OUTPUT LOW VOLTAGE (V)
SINKING 100mA
DH OR DL FALL TIME
vs. TEMPERATURE (CLOAD = 10nF)
MAX15012/13 toc12
TEMPERATURE (°C)
tF (ns)
VDD = VBST = 8V
VDD = VBST = 12V
DH OR DL RISE PROPAGATION DELAY
vs. TEMPERATURE
MAX15012/13 toc13
TEMPERATURE (°C)
PROPAGATION DELAY (ns)
PEAK DH AND DL
SOURCE/SINK CURRENT
MAX15012/13 toc10
1μs/div
DH OR DL
5V/div
SINK AND SOURCE
CURRENT
2A/div
CL = 100nF
DH OR DL RISE TIME
vs. TEMPERATURE (CL = 10nF)
MAX15012/13 toc11
TEMPERATURE (°C)
(ns)
VDD = VBST = 8V
VDD = VBST = 12V
Typical Operating Characteristics (continued)
(Typical values are at VDD= VBST= +12V and TA= +25°C, unless otherwise specified.)
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
DH OR DL FALL PROPAGATION DELAY
vs. TEMPERATURE
MAX15012/13 toc14
TEMPERATURE (°C)
PROPAGATION DELAY (ns)
VHS_MAX vs. VDD_MAX
MAX15012/13 toc15
VDD_MAX (V)
HS_MAX
(V)
DELAY MATCHING (DH/DL RISING)
MAX15012/13 toc16
10ns/div
INPUT
5V/div
DH/DL
5V/div
CL = 0
DELAY MATCHING (DH/DL FALLING)
MAX15012/13 toc17
10ns/div
CL = 0
INPUT
5V/div
DH/DL
5V/div
DH/DL RESPONSE TO VDD GLITCH
MAX15012/13 toc18
40μs/div
10V/div
10V/div
VDD
10V/div
INPUT
5V/divypical Operating Characteristics (continued)
(Typical values are at VDD= VBST= +12V and TA= +25°C, unless otherwise specified.)
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Figure1. Timing Characteristics for Noninverting and Inverting Logic Inputs
VIH
VIL
90%
10%
IN_H
tD_ON3tD_OFF3
VIH
VIL
90%
10%
VIH
VIL
IN_L
(MAX15012A/C
MAX15013A/C)
IN_L
(MAX15012B/D
MAX15013B/D)
tD_ON1
tD_ON2tD_OFF2
tD_OFF1
tMATCH = (tD_ON3 - tD_ON1) or (tD_OFF3 - tD_OFF1) FOR "A/C" VERSION
tMATCH = (tD_ON3 - tD_ON2) or (tD_OFF3 - tD_OFF2) FOR "B/D" VERSION
PINNAMEFUNCTION
1VDDPower Input. Bypass VDD to GND with a parallel combination of 0.1µF and 1µF ceramic capacitors.BSTBoost Flying Capacitor Connection. Connect a 0.1µF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.DHHigh-Side-Gate Driver Output. Driver output for the high-side MOSFET gate.HSSource Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.IN_HHigh-Side Noninverting Logic InputIN_LLow-Side Noninverting Logic Input (MAX15012A/C and MAX15013A/C). Low-side inverting logic
input (MAX15012B/D and MAX15013B/D).GNDGround. Use GND as a return path to the DL driver output and IN_H/IN_L inputs.DLLow-Side-Gate Driver Output. Drives low-side MOSFET gate.
—EPExposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground
plane to aid in heat dissipation (MAX15012C/D and MAX15013C/D only).
Pin Description
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Detailed Description
The MAX15012/MAX15013 are 175V/2A high-speed,
half-bridge MOSFET drivers that operate from a supply
voltage of +8V to +12.6V. The drivers are intended to
drive a high-side switch without any isolation device
like an optocoupler or drive transformer. The high-side
driver is controlled by a TTL/CMOS logic signal refer-
enced to ground. The 2A source and sink drive capa-
bility is achieved by using low RDS_ON,p- and
n-channel driver output stages. The BiCMOS process
allows extremely fast rise/fall times and low propaga-
tion delays. The typical propagation delay from the
logic-input signal to the driver output is 35ns with a
matched propagation delay of 2ns typical. Matching
these propagation delays is as important as the
absolute value of the delay itself. The high 175V input
voltage range allows plenty of margin above the 100V
transient specification per telecom standards.
The maximum operating supply voltage (VDD) must be
reduced linearly from 12.6V to 10.5V when the maxi-
mum voltage (VHS_MAX) increases from 125V to 175V.
See the Typical Operating Characteristics.
Undervoltage Lockout
Both the high- and low-side drivers feature undervolt-
age lockout (UVLO). The low-side driver’s UVLOLOW
threshold is referenced to GND and pulls both driver
outputs low when VDDfalls below 6.8V. The high-side
driver has its own UVLO threshold (UVLOHIGH), refer-
enced to HS, and pulls DH low when BST falls below
6.4V with respect to HS.
During turn-on, once VDDrises above its UVLO thresh-
old, DL starts switching and follows the IN_L logic input.
At this time, the bootstrap capacitor is not charged and
the BST-to-HS voltage is below UVLOBST. For synchro-
nous buck and half-bridge converter topologies, the
bootstrap capacitor can charge up in one cycle and nor-
mal operation begins in a few microseconds after the
BST-to-HS voltage exceeds UVLOBST. In the two-switch
forward topology, the BST capacitor takes some time (a
few hundred microseconds) to charge and increase its
voltage above UVLOBST.
The typical hysteresis for both UVLO thresholds is 0.5V.
The bootstrap capacitor value should be selected care-
fully to avoid unintentional oscillations during turn-on
and turn-off at the DH output. Choose the capacitor
value about 20 times higher than the total gate capaci-
tance of the MOSFET. Use a low-ESR-type X7R dielec-
tric ceramic capacitor at BST (typically a 0.1µF ceramic
capacitor is adequate) and a parallel combination of
1µF and 0.1µF ceramic capacitors from VDDto GND.
The high-side MOSFET’s continuous on-time is limited
escent current. The maximum on-time is dependent on
the size of CBST, IBST(40µA max), and UVLOBST.
Output Driver
The MAX15012/MAX15013 have low 2.5ΩRDS_ONp-
channel and n-channel devices (totem pole) in the out-
put stage. This allows for a fast turn-on and turn-off of the
high gate-charge switching MOSFETs. The peak source
and sink current is typically 2A. Propagation delays from
the logic inputs to the driver outputs are matched to
within 8ns. The internal p- and n-channel MOSFETs have
a 1ns break-before-make logic to avoid any cross con-
duction between them. This internal break-before-make
logic eliminates shoot-through currents reducing the
operating supply current as well as the spikes at VDD.
See the Minimum Input Pulse Widthsection to under-
stand the effects of propagation delays on DH and DL.
The DL voltage is approximately equal to VDD, the DH-
to-HS voltage is approximately equal to VDDminus a
diode drop, when they are in a high state and to zero
when in a low state. The driver RDS_ONis lower at higher
VDD. Lower RDS_ONmeans higher source and sink cur-
rents and faster switching speeds.
Internal Bootstrap Diode
An internal diode connects from VDDto BST and is used
in conjunction with a bootstrap capacitor externally con-
nected between BST and HS. The diode charges the
capacitor from VDDwhen the DL low-side switch is on
and isolates VDDwhen HS is pulled high as the high-
side driver turns on (see the Typical Operating Circuit).
The internal bootstrap diode has a typical forward volt-
age drop of 0.9V and has a 10ns typical turn-off/turn-on
time. For lower voltage drops from VDDto BST, connect
an external Schottky diode between VDDand BST.
Driver Logic Inputs (IN_H, IN_L)
The MAX15012A/B/C/D are CMOS (VDD/2) logic-input
drivers while the MAX15013A/B/C/D have TTL-compati-
ble logic inputs. The logic-input signals are independent
of VDD. For example, the IC can be powered by a 10V
supply while the logic inputs are provided from a 12V
CMOS logic. Also, the logic inputs are protected against
voltage spikes up to 14V, regardless of the VDDvoltage.
The TTL and CMOS logic inputs have 250mV and 1.6V
hysteresis, respectively, to avoid double pulsing during
transition. The logic inputs are high-impedance pins and
should not be left floating. The low 2.5pF input capaci-
tance reduces loading and increases switching speed.
The noninverting inputs are pulled down to GND and the
inverting inputs are pulled up to VDDinternally using a
1MΩresistor. The PWM output from the controller must
assume a proper state while powering up the device.
With the logic inputs floating, the DH and DL outputs pull

Partno	Mfg	Dc	Qty	Available	Descript
MAX15013AASA+T	MAIXM	N/a	2500	avai	175V/2A, High-Speed, Half-Bridge MOSFET Drivers
MAX15013BASA+T	MAIXM	N/a	2500	avai	175V/2A, High-Speed, Half-Bridge MOSFET Drivers