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MAX3443ECSA ,15kV ESD-Protected / 60V Fault-Protected / 10Mbps / Fail-Safe RS-485/J1708 Transceivers
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MAX3443EESA ,15kV ESD-Protected / 60V Fault-Protected / 10Mbps / Fail-Safe RS-485/J1708 Transceivers
MAX3443EESA+ ,±15kV ESD-Protected, ±60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers
MAX3444EASA+ ,±15kV ESD-Protected, ±60V Fault-Protected, 10Mbps, Fail-Safe RS-485/J1708 Transceivers
MAX11068GUU+T
12-Channel, High-Voltage Sensor, Smart Data-Acquisition Interface
AVAILABLE
EVALUATION KIT AVAILABLE
12-Channel, High-Voltage Sensor, Smart
Data-Acquisition Interface
General Description
The MAX11068 is a programmable, highly integrated,
high-voltage, 12-channel, battery-monitoring smart data-
acquisition interface. It is optimized for use with batter-
ies used in automotive systems, hybrid electric battery
packs, electric cars, and any system that stacks long
series strings of secondary metal batteries. This highly
integrated battery sensor incorporates a simple state
machine and a high-speed I2C bus for SMBusK-laddered
serial communication.
The MAX11068 analog front-end combines a 12-channel
voltage measurement data-acquisition system with a high-
voltage switch bank input. All measurements are done
differentially across each cell. The full-scale measurement
range is from 0 to 5.0V, with full stated accuracy guaran-
teed from 0.5V to 4.7V. The input mux/switch bank allows
for differential measurement of each cell in a series stack.
A high-speed, 12-bit successive approximation (SAR) A/D
converter is used to digitize the cell voltages. All 12 cells
can be measured in less than 107Fs. The MAX11068 uses two-scan approach for collecting cell measurements
and correcting them for errors. The first phase of the scan
is the acquisition phase where the voltages of all 12 cells
are acquired. The second phase is the error-cancellation
phase where the ADC input is chopped to remove errors.
This two-phase approach yields excellent accuracy over
temperature and in the face of extreme noise in the sys-
tem. The MAX11068 incorporates an internal oscillator that
generates a 6.0MHz system clock with Q3.0% accuracy.
The MAX11068 consumes less than 2.0mA from the power
supply while in data-acquisition modes. This current is
reduced to 75FA in standby mode and less than 1FA in
shutdown mode. The device is packaged in a 38-pin,
9.7mm x 4.4mm x 1.0mm TSSOP package that is lead free
and RoHS compliant and is designed to operate over the
AEC-Q100 Grade 2, -40NC to +105NC temperature range.
Applications
High-Voltage, Multicell Series-Stacked-Battery
Systems
Electric and Hybrid Electric Vehicle (HEV)
Battery Packs
Electric Bikes
High-Power Battery Backup Systems
SuperCap Backup Systems
Power Tools
Features
S 12-Cell Battery Voltage Measurement with
Temperature Monitoring Up to 12 Lithium-Ion (Li+), NiMH, or Super-CapCells Two Auxiliary Analog Inputs for TemperatureMeasurement
S High-Accuracy I/OsExcellent ±0.25% Voltage-MeasurementAccuracy
≤ 5mV Offset VoltageS Integrated 12-Channel Data-Acquisition System12-Channel High-Voltage Mux to ADCDifferential Cell-Voltage Measurement12-Bit Precision, High-Speed SAR ADC12 Cell Voltages Measured Within 107µs
S Battery-Fault DetectionOvervoltage and Undervoltage Digital ThresholdDetection Cell Sense Line Open-Circuit DetectionHigh/Low Temperature Digital Threshold Detection
S 12 Integrated Cell-Equalization SwitchesSupport Up to 200mA
S Integrated 6V to 70V Input Linear Regulator
S Integrated 25ppm/NC, 2.5V Precision Reference
S Integrated Level-Shifted, I2C-Compliant SMBusLadder Interface Supports Multiple Devices, Up to 31 SMBus-Ladder-Connected ICs Communications Protocol with Autoaddressing Fault-Tolerant Hardware Handshake and DataCRC Checking
S Three General-Purpose Digital I/O Lines
S Ultra-Low Power DissipationStandby Mode Quiescent Current Drain 75µAShutdown Mode Leakage Current 1µA
S Operating Temperature Range from -40NC to
+105NC (AEC-Q100 Grade 2)
S 38-Pin, Lead-Free/RoHS-Compliant TSSOP
Package (9.7mm x 4.4mm)
Ordering Information
+Denotes a lead(Pb)-free/RoHS-compliant package.
PARTTEMP RANGEPIN-PACKAGE
MAX11068GUU+-40NC to +105NC38 TSSOP
MAX11068GUU/V+-40NC to +105NC38 TSSOP
MAX11068
12-Channel, High-Voltage Sensor, Smart
Data-Acquisition Interface
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
HV, VDDU, GNDU, DCIN to AGND ......................-0.3V to +80V
HV to C12 ................................................................-0.3V to +6V
C1–C12 to AGND ......................................-0.3V to (VHV + 0.3V)
C(N+1) to C(N) .....................................................-0.3V to +9.0V
C0 to AGND .........................................................-0.3V to +4.0V
SHDN to AGND .....................................................-0.3V to +60V
VAA to AGND .......................................................-0.3V to +4.0V
VDDL to GNDL .....................................................-0.3V to +4.0V
VDDU to GNDU ....................................................-0.3V to +6.0V
GNDU to GNDL .....................................................-0.3V to +80V
AGND to GNDL ....................................................-0.3V to +0.3V
AUXIN1, AUXIN2, THRM to AGND ......................-0.3V to +6.0V
REF to AGND ...........................................-0.3V to (VAA + 0.3V)
SCLL, SDAL, ALRML to GNDL ...............-0.3V to (VDDL + 0.3V)
SCLU, SDAU, ALRMU to GNDU .............-0.3V to (VDDU + 0.3V)
CP+ to AGND .........................(GNDU - 1.0V) to (VDDU + 1.0V)
CP- to AGND .........................................-0.3V to (GNDU + 0.3V)
GPIO0, GPIO1, GPIO2 ...........................-0.3V to (VDDL + 0.3V)
ESD Rating (HBM, Note 1) ..................................................Q2kV
C0–C12, AUXIN1, AUXIN2, REF, VAA, VDDU, GNDU,
VDDL, GNDL, DCIN, SHDN, CP+, CP-, HV, SCLU, SDAU,
ALRMU, SCLL, SDAL, ALRML, GPIO0, GPIO1, GPIO2
Maximum Continuous Current into Any Pin .......................20mA
ESD Diode Maximum Average
Power Dissipation for Hot Plug (Note 2) .....................14.4/√τ W
Continuous Power: Multilayer Board ..........................1269.8mW
Continuous Power: Single-Layer Board
(derating 15.9mW/NC above +70NC).......................1095.9mW
Operating Temperature Range ........................-40NC to +105NC
Storage Temperature Range ............................-55NC to +150NC
Junction Temperature (continuous) ................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
ELECTRICAL CHARACTERISTICS
(TA = TMIN to TMAX, unless otherwise noted. VGNDU = VDCIN = 18V to +60V, typical values are at TA = +25NC, unless otherwise
specified from -40NC to +105NC per the application circuit in Figure 4.)
ABSOLUTE MAXIMUM RATINGS
Note 1: Human Body Model to Specification MIL-STD-883 Method 3015.7.
Note 2: Maximum average power dissipation for time period τ. Peak current must never exceed 2A. τ is one time constant (in µs) of
hot-plug current waveform through a given diode. For example, if τ is 330µs, the maximum average diode power dissipation
is 0.793W. Actual average power dissipation must be calculated from current waveform for the application circuit.
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
C0–C12 INPUTS
Differential Cell Input-Voltage
Range VCELLXINAny 2 inputs
CN+1 to CN for C12–C0 (Note 2)0.54.7V
Cell Input Common-Mode Voltage
Range (Note 5)VCXIN
Input C1 referred to AGND0.77.0
Inputs C2 through C[TOP] referred to
AGND 0.7
C[TOP] referred to AGNDGNDU
C0 referred to AGND-0.05+0.05
Input-Leakage CurrentICXINADC off; C(N) to C(N+1) = 5V-1.0+1.0FAADC ON; C(N) to C(N+1) = 3VQ10.0
ADC ResolutionADCBITSLSB size is +1.22mV12Bits
Channel- Conversion TimetSHighest enabled input11.34Fs/
ChannelEnabled inputs except highest7.66
Channel Accuracy
TA = +25NC (Note 4); VCELL = 3.0V-5+5
-10NC < TA < +50NC; VCELL = 3.0V
(Note 3)-10+10
-40NC < TA < +85NC; VCELL = 3.0V
(Note 3)-15+15
MAX11068
12-Channel, High-Voltage Sensor, Smart
Data-Acquisition Interface
ELECTRICAL CHARACTERISTICS (continued)
(TA = TMIN to TMAX, unless otherwise noted. VGNDU = VDCIN = 18V to +60V, typical values are at TA = +25NC, unless otherwise
specified from -40NC to +105NC per the application circuit in Figure 4.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Differential NonlinearityDNLNo missing codes at 12 bitsQ1.0LSB
Channel Offset ErrorCELLVOSCells 1 through 12-5+5mV
Channel Gain ErrorCELLAVCells 1 through 12-1.0+1.0%
Cell-Balancing Switch ResistanceRSWITCH from C(N) to C(N+1) when
enabled1.5620I
AUXIN1, AUXIN2 INPUTS
Absolute Differential Input RangeVAUXINXINAUXIN1, AUXIN2 to AGND; ADC REF =
THRM0VTHRMV
Common-Mode Input-Voltage
RangeInputs AUXIN1/2 referred to AGND0VTHRMV
Input-Leakage CurrentIAUXINADC off; input voltage = 3.3V-1.0+1.0FA
ADC Resolution12Bits
Conversion TimetS10
Fs/
AUX_
Input
AccuracyTA = +25NC -0.5+0.5%-40NC < TA < +105NC-1.0+1.0
Differential NonlinearityDNLNo missing codes at 12 bitsQ1.0LSB
Offset ErrorAUXVOSAUXIN1, AUXIN2-8+8mV
Gain ErrorAUXAVAUXIN1, AUXIN2-1.0+1.0%
THRM Switch Resistance RTHRMTHRM to VAA (Note 3)51828I
VOLTAGE REFERENCE
Output REF Voltage REFVOUTTA = +25NC2.452.502.55V
REF Output Short-Circuit CurrentIREF-SC Q12.5mA
Temperature CoefficientDREF/
DTEMPQ25ppm/NC
Initial DriftChange after
1000hr burn-in120ppm
LOGIC INPUTS AND OUTPUTS (GPIO AND SHDN)
SHDN Voltage High1.8V
SHDN Voltage Low0.5V
SHDN Input Leakage Current
VSHDN = 3.4V1VSHDN = 30V5.1518
VSHDN = 56V12.645
GPIO Input Voltage Low0.8V
GPIO Input Voltage High2.4V
I/O Leakage CurrentI/O pins programmed to high impedance-1+2+6.2FA
GPIO Output Voltage LowISINK = 3mA0.4V
GPIO Output Voltage HighISOURCE = 3mAVDDL -
0.5V
MAX11068
12-Channel, High-Voltage Sensor, Smart
Data-Acquisition Interface
ELECTRICAL CHARACTERISTICS (continued)
(TA = TMIN to TMAX, unless otherwise noted. VGNDU = VDCIN = 18V to +60V, typical values are at TA = +25NC, unless otherwise
specified from -40NC to +105NC per the application circuit in Figure 4.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
LINEAR REGULATOR +3.4V (VAA)
Input Voltage RangeVDCIN0 < ILOAD < 8mA6.070V
Output VoltageVVAA0 < ILOAD < 8mA;
6V < VDCIN < 70V3.253.43.55V
Short-Circuit CurrentVAA = 0V, 6V < VDCIN < 30V60mA
Power-On Reset Threshold
(Note 3)
Falling VAA2.852.953.05VRising VAA2.93.03.1
POR threshold hysteresis0.014080mV
Thermal ShutdownRising temperature+145NC
Thermal-Shutdown Hysteresis15NC
CHARGE PUMP +3.4V
Output VoltageVVDDU - VGNDU ILOAD = 0 at 0.1FF CP+ to CP-3.23.43.55V1mA = ILOAD at 0.1FF CP+ to CP-3.22.53.55
Charge-Pump EfficiencyIVDDU/IGNDU - IVDDU at 2.7V,
VDDU - GNDU608999%
Charge-Pump Undervoltage
ThresholdVCPUV2.02.73.2V
INTERNAL OSCILLATORS (32.768kHz, 6.0MHz)
Internal 32.768kHz Oscillator
FrequencyfWD-OSC32.11332.76833.423kHz
Internal 6.0MHz Oscillator
FrequencyfHF-OSC5.826.06.18MHz
I2C LOWER PORT SCLL, SDAL, ALRML (Relative to GNDL, VDDL = Nominal 3.4V)
SDAL, SCLL Input Voltage Low0.3 x
VVDDLV
SDAL, SCLL Input Voltage High0.7 x
VVDDLV
SDAL, SCLL Input Hysteresis0.20.1 x
VVDDL0.5V
SDAL, ALRML Output Voltage LowAt sink = 3mA0.4V
SDAL, SCLL Leakage CurrentVSDAL = VSCLL = 1.5V1.0FA
SDAL, Managed Resistance
RACTIVE_EDGEActive edge0.513kIManaged passive state355075
Off passive state1MI
tONE_SHOTtONE_SHOT (active edge pulse)150250380ns
SDAL 1-TAU CapacitanceC1_TAUSDAL rises to 70% within active edge
time when loaded with this capacitance 120280550pF
ALRML Output High VoltageAt source = 3mAVDDL -
0.4V
ALRML Heartbeat FrequencyOSC = 32.768kHz Q2.0%16,00016,38416,711kHz
MAX11068
12-Channel, High-Voltage Sensor, Smart
Data-Acquisition Interface
ELECTRICAL CHARACTERISTICS (continued)
(TA = TMIN to TMAX, unless otherwise noted. VGNDU = VDCIN = 18V to +60V, typical values are at TA = +25NC, unless otherwise
specified from -40NC to +105NC per the application circuit in Figure 4.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
I2C UPPER PORT SCLU, SDAU, ALRMU (Relative to GNDU, VDDU)
SDAU, ALRMU Input Voltage Low0.3 x
VVDDUV
SDAU, ALRMU Input Voltage High0.7 x
VVDDUV
SDAU, ALRMU Input Hysteresis0.050.1 x
VVDDU0.4V
SDAU, SCLU Output Voltage LowAt sink = 3mA0.4V
SDAU, SCLU Leakage CurrentVSDAU = VSCLU = 1.5V-1Q1.0+1FA
SDAU, Managed Resistance
Active edge0.513kI
Managed passive state305075kI
Off passive state1MI
tONE_SHOTtONE_SHOT (active edge pulse)150250480ns
SDAU 1-TAU Capacitance
SDAU rises to 70% within active edge
time when loaded with this capaci tance,
i.e., choose 100pF to guarantee 3H rising
edge
120280550pF
ALRMU Clamp CurrentVALRMU = VDDU + 0.15V1FAVALRMU = GNDU - 0.15V1
ALRMU Clamp Voltage
250FA current pulling below GNDUGNDU
-0.49V
250FA current pulling above VDDUVDDU +
0.49V
Upper Port Input CapacitanceSCLU, SDAU, ALRMU8pF
Port-to-Port Level Delay1Fs
Interface StartupFrom SHDN or from POR3ms
I2C TIMING CHARACTERISTICS
I2C Clock FrequencyfI2C10200kHz
Bus Timeout PeriodtTIMEOUTTimeout for maximum clock low/high time27.4ms
Bus Free Time tBUFMaster to slave delay from a STOP to the
next START command500Fs
Bus Hold TimetHD-STAMaster hold time after a START
command350Fs
Bus START Command Setup TimetSU-STARepeated START setup time1Fs
Bus STOP Command Setup TimetSU-STOPSTOP condition setup time100ns
SDA Data Hold Time
SLAVE PORT
tHD-DAT
Transmit500Receive-30
MASTER PORT
tHD-DAT
Transmit400
Receive (Note 7)400
MAX11068
