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M74HC03M1RSTN/a700avaiQUAD 2-INPUT OPEN DRAIN NAND GATE
M74HC03RM13TRSTN/a2000avaiQUAD 2-INPUT OPEN DRAIN NAND GATE


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M74HC03M1R-M74HC03RM13TR
QUAD 2-INPUT OPEN DRAIN NAND GATE
1/8July 2001 HIGH SPEED:
tPD = 8ns (TYP .) at VCC = 6V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C HIGH NOISE IMMUNITY:NIH = VNIL = 28 % VCC (MIN.) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 03
DESCRIPTION

The M74HC03 is an high speed CMOS QUAD
2-INPUT OPEN DRAIN NAND GATE fabricated
with silicon gate C2 MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output. This device can, with
an external pull-up resistor, be used in wired AND
configuration. This device can be also used as a
led driver and in any other application requiring a
current sink.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC03

QUAD 2-INPUT OPEN DRAIN NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HC03
2/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE

Z : High Impedance
ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HC03
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
M74HC03
4/8
TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)


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