| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| M5M27C202JK-12 |
MITSUBISHI |
N/a |
11 |
 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM |
| M5M27C202JK-12 |
MIT |
N/a |
108 |
|
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM |
M5M27C202JK-12I MIT, 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M27C202JK-12 , 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M27C202JK-15 , 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
M5M28F101AFP , 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M28F101AFP , 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M29GB320VP-80 , 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
MA142WA ,Small-signal deviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitReverse current (D ..
MA142WK ,Small-signal deviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitReverse current (D ..
MA142WK ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
